TRANSISTOR K402 Search Results

TRANSISTOR K402 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR K402 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K401 Abstract: K402 K404 K4021 transistor k402 darlington transistor SMD NPN Contextual Info: Photocoupler K401 • K402 • K404 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package.	Original	16-pin AC3750Vrms K401 K402 K404 K4021 transistor k402 darlington transistor SMD NPN	PDF
K4026 Abstract: 2SK4026 Contextual Info: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications 1.5 ± 0.2 Unit: mm Features 1.6 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: \|Yfs\| = 0.85 S (typ.)	Original	2SK4026 K4026 2SK4026	PDF
K4021 Abstract: 2SK4021 Contextual Info: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.)	Original	2SK4021 K4021 2SK4021	PDF
K4026 Contextual Info: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications 1.5 ± 0.2 Unit: mm Features 1.6 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: \|Yfs\| = 0.85 S (typ.)	Original	2SK4026 K4026	PDF
K4021 Abstract: 2SK4021 Contextual Info: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.)	Original	2SK4021 K4021 2SK4021	PDF
K4021 Abstract: 2SK4021 Contextual Info: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulator and DC/DC Converter Applications Motor Drive Applications １．５±０．２ Unit: mm Low leakage current : IDSS = 100 µA (max) (VDS = 250 V) Enhancement mode	Original	2SK4021 K4021 2SK4021	PDF
K4023 Abstract: 2SK4023 Contextual Info: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter 1.5 ± 0.2 Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 0.8 S (typ.)	Original	2SK4023 K4023 2SK4023	PDF
Contextual Info: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 1.6 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)	Original	2SK4022	PDF
2SK4020 Abstract: K4020 Contextual Info: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.56 Ω (typ.)	Original	2SK4020 2SK4020 K4020	PDF
2SK4022 Contextual Info: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 1.6 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)	Original	2SK4022 2SK4022	PDF
K4021 Abstract: 2SK4021 Contextual Info: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulator and DC/DC Converter Applications Motor Drive Applications １．５±０．２ Unit: mm z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)	Original	2SK4021 K4021 2SK4021	PDF
K4020 Contextual Info: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 z 4-V gate drive 0.6 MAX. z High forward transfer admittance: \|Yfs\| = 4.5 S (typ.)	Original	2SK4020 K4020	PDF
K4020 Abstract: 2SK4020 Contextual Info: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z Low leakage current : IDSS = 100 A (max) (VDS = 200 V)	Original	2SK4020 K4020 2SK4020	PDF
K4023 Abstract: 2SK4023 Contextual Info: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter １．５±０．２ Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 0.8 S (typ.)	Original	2SK4023 K4023 2SK4023	PDF

2SK4023 Abstract: K4023 Contextual Info: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulators and DC-DC Converters 5.2 ± 0.2 0.6 MAX. 5.5 ± 0.2 6.5 ± 0.2 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 0.8 S (typ.)	Original	2SK4023 2SK4023 K4023	PDF
K4021 Abstract: 2SK4021 Contextual Info: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulator and DC/DC Converter Applications Motor Drive Applications １．５±０．２ Unit: mm : IDSS = 100 µA (max) (VDS = 250 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)	Original	2SK4021 K4021 2SK4021	PDF
Contextual Info: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter １．５±０．２ Unit: mm ５．２±０．２１．６ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.)	Original	2SK4023	PDF
k4026 Abstract: 2SK4026 Contextual Info: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ Features １．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: \|Yfs\| = 0.85 S (typ.)	Original	2SK4026 k4026 2SK4026	PDF
2SK4020 Abstract: K4020 Contextual Info: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ６．５±０．２５．２±０．２０．６ MAX． Low leakage current	Original	2SK4020 2SK4020 K4020	PDF
K4026 Abstract: 2SK4026 Contextual Info: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ Features １．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: \|Yfs\| = 0.85 S (typ.)	Original	2SK4026 K4026 2SK4026	PDF
K4026 Abstract: 2SK4026 Contextual Info: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２１．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: \|Yfs\| = 0.85 S (typ.)	Original	2SK4026 K4026 2SK4026	PDF
2SK4022 Contextual Info: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２１．６ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)	Original	2SK4022 2SK4022	PDF
k4023 Contextual Info: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter １．５±０．２ Unit: mm ６．５±０．２ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: \|Yfs\| = 0.8 S (typ.)	Original	2SK4023 k4023	PDF
Contextual Info: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２１．６ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)	Original	2SK4022	PDF

TRANSISTOR K402 Search Results

TRANSISTOR K402 Result Highlights (5)

TRANSISTOR K402 Datasheets Context Search

K401

K4026

K4021

K4026

K4021

K4021

K4023

2SK4020

2SK4022

K4021

K4020

K4020

K4023

2SK4023

K4021

k4026

2SK4020

K4026

K4026

2SK4022

k4023