TRANSISTOR K44 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

k446

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbSB'lBl DD3D580 b=i7 « A P X product Specification Philips semiconductors BU K446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK442-100A

Abstract: BUK442-100B
Contextual Info: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.

BUK445-100A

Abstract: BUK445-100B 100-P BUK445
Contextual Info: b^E D N AMER P H I L I P S / D I S C R E T E • bb5 3 T3 1 Q 3 0 SSS B U K445-1OOA/B PowerMOS transistor N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK446-800A

Abstract: BUK446 BUK446-800B
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

transistor bu

Abstract: K444
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

K444

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BUK441

Abstract: BUK441-60A BUK441-60B 3909
Contextual Info: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.

Contextual Info: N ANER PHILIPS/DISCRETE bTE D bb53T31 DQ3DSbD fiTT * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

sd 431 transistor

Contextual Info: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

sf 128 transistor

Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.

BUK445-100A

Abstract: BUK445-100B BT diode BUK445
Contextual Info: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies

BUK446

Abstract: BUK446-800B BUK446-800A DD305 k446
Contextual Info: N AMER P H ILIP S /D IS C R E TE b^E » bbS3^31 DDBOSflO b=n • APX product Specification Philips semiconductors BUK446-800A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.

BUK444-500A

Abstract: BUK444-500B transistor BUK444-500B BUK444
Contextual Info: N AMER PHI LI PS / DI SC R ET E ESE kfa53T31 0DSG37G D 1 BUK444-500A BUK444-500B PowerMOS transistor T - 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

2SK520

Abstract: transistor k43 2SK520 K44 2SK425 k41 transistor transistor k42 transistor k41 2SK520 K43 marking k42 mwk41
Contextual Info: Junction Field Effect Transistor 2SK520 zt>nnitosikh^ > > * 9 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier 2S 520U K n . - 7- m f f l ? 4 7 ° k M + * ~ i - < n R F T > - f m & £ v r - - n i 7' PACKAGE DIMENSIONS Unit : mm)

BUK441

Abstract: BUK441-100A BUK441-100B
Contextual Info: N AMER PHILIPS /D I SCRE TE b'JE I m ^53^31 003DS05 TOb • APX Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRiPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AMER PHI LIP S/ DI SCR ET E 25 E D b b 5 3 T 31 0 0 2 0 4 1 0 =1 • BUK445-500A BUK445-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

transistor 5BM

Abstract: BUK443 BUK443-60A BUK443-60B
Contextual Info: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In

BUK444

Abstract: BUK444-500A BUK444-500B
Contextual Info: N AMER P H I L I P S / D I S C R E T E asE kb53T3 1 GDSG37G 1 j> BUK444-500A BUK444-500B PowerMOS transistor T - 3 7 - 0 9 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

marking CODE n3 6PIN

Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Contextual Info: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2

BUK444

Abstract: 3BS transistor BUK444-800A BUK444-800B buk444 800
Contextual Info: N AMER PHILIPS/DISCRETE blE D • ^53^31 0D305^ Philips Semiconductors Product Specification PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

RP112N321D

Contextual Info: RP112x SERIES Low Noise 150mA LDO REGULATOR NO.EA-258-131024 OUTLINE The RP112x Series are CMOS-based voltage regulator LDO ICs, which have been developed using the CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,

Contextual Info: PHILIPS INTERNATIONAL SbE D • 7110fiEb 00442^0 ÜSS « P H I N Philips Components Data sheet status Product specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope.