TRANSISTOR KJE Search Results

15QQ

Abstract: T0320 iCR 406 J
Contextual Info: International ZQR Rectifier PD 9.1601 IRG4BC20FD PREUMINART INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

6DI30B-050

Abstract: IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149
Contextual Info: 6DI3OB-O5CK30A — )v POWER TRANSISTOR MODULE Features •7 1 ) —?fc*i ') >? ?*'{ $•—K l*lSi Including Free Wheeling Diode • hFE^'ra^' High DC Current Gain • Insulated Type Applications • AC -t — 9 —iUiiP AC M otor Controls • 1 7 3 > Air Conditioners

KJE transistor

Contextual Info: 32E D • flS3b3EG DOlb^S 4 « S I P NPN Silicon RF Transistor 3 1 -^ 3 SIEMENS/ SPCLi SEMICONDS T ' BFQ 19S _ • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA.

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

zq 405-MF

Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Contextual Info: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Transistor BSX 47-10

Abstract: Transistor BSX 45-10 Q60218-X45-V10 Q60218-X45-V16 TT 46 N 16 LOF 10HS BSX45 Q60218-X45-V6 BSX47 Q60218-X46-V16
Contextual Info: BSX 45, BSX 46, BSX 47 NPN Transistor for AF am plifier and switching applications BSX 45, BSX 46,and BSX 47 are epitaxial NPN silicon Planartransistors in a case 5 C 3 DIN 41873 TO -39 . Their collectors are electrically connected to their cases. The transistors are particularly suitable for AF amplifiers and AF switching applications

TT 46 N 16 LOF

Abstract: Transistor BSX 45-10 Transistor BSX 47-10 Transistor BSX 28 Q60218-X45-V10 bsx 46-16 BSX45 Q60218-X45-V16 Transistor BSX45 Q60218-X45-V6
Contextual Info: BSX 45, BSX 46, BSX 47 NPN Transistor for AF am plifier and switching applications BSX 45, BSX 46,and BSX 47 are epitaxial NPN silicon Planartransistors in a case 5 C 3 DIN 41873 TO -39 . Their collectors are electrically connected to their cases. The transistors are particularly suitable for AF amplifiers and AF switching applications

Contextual Info: TOSHIBA GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. U n it in mm 1S.8±0.5. 03.6±O.2 • • H ig h sp e e d • Low Satu ration Voltage : VQE say = 3.4V (Max. • 3-5 High Input Impedance

Contextual Info: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.

2SA236

Abstract: 2SA2362
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SD627

Abstract: TI15J 2sb644
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BCY77VII

Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

BCY77

Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

SR 506A

Abstract: h13-506a HI1-508A hi1-507 h13-507a HI1-0506A-2 HI1-0506A-5 HI1-0506A-8 HI1-0507A-8 HI3-0506A-5
Contextual Info: H a HI-506A, HI-507A HI-508A, HIS09A r r i s semiconductor August 1997 1 6 -C h a n n e l, 8 -C h a n n e l, D iffe re n tial 8 -C h a n n e l and D iffe ren tial 4 -C h a n n e l, C M O S A n a lo g M U X s w ith A c tiv e O v e rv o lta g e P ro tectio n

DAC89EX

Abstract: BB-3500 OP01CP AD540JH bb3500 AD308H mA747PC 6502 microprocessor REF05 cookbook for ic 555
Contextual Info: PM 11984DATA B O O K The P M I C o m m itm e n t P M I is c o m m itte d to b u ild in g lo n g te rm c u s to m e r re la tio n s h ip s resulting in m u tu a l g ro w th . At PM I w e d e d ic a t e ourselves to le a d e rs h ip in c u s to m e r service,

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

HIN238

Abstract: HIN230
Contextual Info: H I N 2 3 0 t h r u H IN 2 4 1 February 1999 Data Sheet +5V Powered RS-232 Transmitters/Receivers File N um b er 3138.5 Features • Meets All RS-232E and V.28 Specifications The HIN230-HIN241 family of RS-232 transmitters/receivers interface circuits meet all EIA RS-232E and V.28 specifications,

SN7441

Abstract: 54175 TFK 404 MM1402a equivalent SD300 N74141 SN7401 3 BB 4 SO 5 CON 6 RAY 7 CC 8 SI 9 RB 10 RG 11 VE
Contextual Info: NUMERICAL INDEX FUNCTIONAL INDEX SALES OFFICES Copyright 1974 S IG N E T IC S C O R P O R A T IO N Signetics Corporation reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible product.

HIN200

Abstract: HIN201 HIN203 HIN205 HIN209 HIN213
Contextual Info: HIN200 thru HIN213 Semiconductor +5V Powered RS-232 Transmitters/Receivers with 0.1 Microfarad External Capacitors June iggs Features Description • Meets All RS-232E and V.28 Specifications The HIN200-HIN213 family of RS-232 transmitters/receivers interface circuits meet all EIA RS-232E and V.28 specifications,

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

KJE transistor

Abstract: thyristor control spot welding circuit thyristor lead acid battery charging thyristor control arc welding rectifier circuit FSM26L0336K* ffv range FSM26V0206K KJE 17 transistor elco capacitor 16 uf 450 -550 volt 100 kvar 480 volt 3 phase power factor capacitors FPG86Y0604J
Contextual Info: Medium Power Film Capacitors FFVE/FFVI Male and Female Connections GENERAL DESCRIPTION DC FILTERING The FFV capacitor is specifically designed for DC filtering, low reactive power. The series uses a non-impregnated metallized polypropylene or polyester dielectric, which