TRANSISTOR KT 313 Search Results

TRANSISTOR KT 313 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR KT 313 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor BD 512 Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A Contextual Info: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern	OCR Scan	12-VAkku /50Hz III/18/379 transistor BD 512 transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A	PDF
ABB 07 kr 240 Abstract: ABB 07 KR 220 User Guide ABB masterpiece 200 connect PT100 sensor to 313C plc ABB masterpiece 07 SK 90 R1 ABB 07 KR 200 User Guide PT1000 thermocouple DSCA 114 communication board 07 KT 97 R0100 Contextual Info: System Description Advant Controller 31 Intelligent Decentralized Automation System Hardware 90 Series RxD TxD BLK 07 KP 90 07 KT 97 Advant Controller 31 RUN Comm. Processor RCOM ERR Supp. Advant Controller 31 Basic Unit 07 AC 91 ERR Test Advant Controller 31	Original	R0201, R0101 ABB 07 kr 240 ABB 07 KR 220 User Guide ABB masterpiece 200 connect PT100 sensor to 313C plc ABB masterpiece 07 SK 90 R1 ABB 07 KR 200 User Guide PT1000 thermocouple DSCA 114 communication board 07 KT 97 R0100	PDF
Contextual Info: LSI LOGIC LCA100K Compacted Array Plus Series 0.7-Micron HCMOS Preliminary The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering ex tremely high performance, combined with very high gate counts. The LCA100K series is manufactured	OCR Scan	LCA100K	PDF
6P45S Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550 Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR \| 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D	OCR Scan	TGLIO395 III/I8/379 6P45S 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550	PDF
KF 517 Abstract: transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U ST R IE V E R T R IE B R U N D FU N K UND FE R N SE H E N piy!E§HÜ [r a d io -television] APRIL 1976 S5ITS 1-8 SHJLENBANDGERÄT "B 90” TESLA - .B 90" Zu den Importen bei Spulentonbandgeräten wird künftig auch das TESLA-Erzeugnis "B 90"	OCR Scan	III/18/379 KF 517 transistor KF 517 Transistoren DDR service-mitteilungen KF517 transistor gt 322 b1 Ziphona bauelemente DDR servicemitteilungen KT326B	PDF
Halbleiterbauelemente DDR Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372 Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der	OCR Scan		PDF
KT 819 transistor Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18 Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e	OCR Scan		PDF
Contextual Info: Ordering number : EN1334E 2SC3332 Bipolar Transistor 180V, 160A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown Adoption of MBIT process Specifications	Original	EN1334E 2SC3332	PDF
IC CA3138 Abstract: RCA-CA3138 relay driver ckt CA3138 CA3138A transistor 9014 transistor LC 77 Contextual Info: 3875081 G E SOLID Arrays STATE 01E 14648 _ _ _ _ _ \ ì e* ' - c/ - 3 _ j _ CA3138, C A3138 A High-Current, High-Beta N-P-N Transistor Arrays For Industrial, Com m ercial, and M ilitary Applications	OCR Scan	CA3138, CA3138A RCA-CA3138 andCA3138A CA3138A f----9014 92CS-26926RI IC CA3138 relay driver ckt CA3138 transistor 9014 transistor LC 77	PDF
Contextual Info: Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE sat NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications	Original	EN1334F 2SC3332	PDF
Contextual Info: a, PRELIMINARY W91580 SERIES 57 24-MEMORY TONE/PULSE SWITCHABLE DIALER Winbond - GENERAL DESCRIPTION The W91580 dialing Series are Si-gate as necessary. They including a 16-digit X tory memory that digit CMOS ICs that provide either pulse dialing or tone	OCR Scan	W91580 24-MEMORY W91580 16-digit 31/32-digit memor98	PDF
C3332 Abstract: 2SC3332S 2sc3332 Contextual Info: 2SC3332 Ordering number : EN1334E SANYO Semiconductors DATA SHEET 2SC3332 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide ASO and highly resistant to breakdown	Original	EN1334E 2SC3332 C3332 2SC3332S 2sc3332	PDF
Contextual Info: LSI LOGIC LCA10QK Compacted Array Plus Series 0.7-Micron HCMOS Preliminary Description The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering ex tremely high performance, combined with very high gate counts. The LCA100K series is manufactured	OCR Scan	LCA10QK LCA100K	PDF
ECM1053 Abstract: EMC1002 EMC1023 EMC1043 EMC1212 Contextual Info: AN 13.19 Resistance Error Correction 1 Preface This application note describes the Resistance Error Correction feature available on many SMSC temperature sensor devices. 2 Audience This application note assumes that the reader has previous knowledge of how temperature sensing	Original	EMC1002 ECM1053 EMC1002 EMC1023 EMC1043 EMC1212	PDF

2SA1730 Abstract: EN3134 Contextual Info: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.	Original	EN3134 2SA1730 2SA1730] 2SA1730 EN3134	PDF
2sa172 Abstract: 2SA1728 Contextual Info: Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.	Original	EN3132 2SA1728 2SA1728] 2sa172 2SA1728	PDF
2SA1729 Contextual Info: Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.	Original	EN3133 2SA1729 2SA1729] 2SA1729	PDF
TTL 740 NAND propagation delay Abstract: NA51 equivalent transistor AMI8G65 OB83 G392 IB09X1 MG82C54 MICROCONTROLLER-8051 NA21 na52 transistor Contextual Info: "AMI’s 0.8µm Gate Array family is simply the best 0.8µm on the market . . . one of the highest performance, yet lowest cost array products available today . . ." • Designed for 3V, 5V, or 3V/5V mixed supplies ■ 210 ps gate delays fanout = 2 ■ 5,000 to 663,000 available gate densities	Original		PDF
2044B Abstract: 2SA1732 Contextual Info: Ordering number:EN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Features • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions	Original	EN3136 2SA1732 2045B 2SA1732] 2044B 2044B 2SA1732	PDF
c 3135-3 Abstract: 2044B 2SA1731 Contextual Info: Ordering number:EN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions	Original	EN3135A 2SA1731 2045B 2SA1731] 2044B c 3135-3 2044B 2SA1731	PDF
SGS-Thomson ball grid array Abstract: CB35000 ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver Contextual Info: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.	Original	CB35000 SGS-Thomson ball grid array ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver	PDF
transistor eft 323 Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187 Contextual Info: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge	OCR Scan		PDF
7939-2 Abstract: signal path designer CB35000 Series Contextual Info: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.	Original	CB35000 7939-2 signal path designer CB35000 Series	PDF
U3761MB-X Abstract: Ten by 32 digit two-touch indirect repertory memory SSO-44 U3761MB-XFNG 2N5401 MPSA42 U3761MB Contextual Info: Features Speech Circuit • • • • Adjustable DC Characteristic Symmetrical Input of Microphone Amplifier Receiving Amplifier for Dynamic or Piezo-electric Earpieces Automatic Line-loss Compensation Dialer • • • • • • • • • • • •	Original	4791C U3761MB-X Ten by 32 digit two-touch indirect repertory memory SSO-44 U3761MB-XFNG 2N5401 MPSA42 U3761MB	PDF

TRANSISTOR KT 313 Search Results

TRANSISTOR KT 313 Result Highlights (5)

TRANSISTOR KT 313 Datasheets Context Search

transistor BD 512

ABB 07 kr 240

6P45S

KF 517

Halbleiterbauelemente DDR

KT 819 transistor

IC CA3138

C3332

ECM1053

2SA1730

2sa172

2SA1729

TTL 740 NAND propagation delay

2044B

c 3135-3

SGS-Thomson ball grid array

transistor eft 323

7939-2

U3761MB-X