TRANSISTOR L 701 Search Results

P3055L

Abstract: P3055
Contextual Info: Philips S em iconductors Product specification P o w e rM O S transistor PHP3055L L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level field-effect power transistor in a

CSA1012

Contextual Info: CSA1012, CSC2562 L CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications OlM A B C D e F G H J K L _ * M N MSN MAX 16.51 10.67 4.83 _ 0.90 1,15 ! ,40 3,75 3.88 2,29 2.79 2,54 3.43 0,56 12,70 14,73 _ 6.35

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

TRANSISTOR 2SC 2581

Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS

CSA1012

Abstract: CSC2562
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSA1012 CSC2562 CSA1012, CSC2562 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR

on 614 power transistor

Abstract: transistor D 288 transistor 614 transistor 9002 CSA614 CSD288
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR

2SK2312

Contextual Info: 2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) l High forward transfer admittance

on 614 power transistor

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator

IN7100

Contextual Info: Philips Semiconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

Contextual Info: Philips Semiconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

TI SVG

Contextual Info: Philips Semiconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

IC test

Contextual Info: KTC2022D/L SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • Low Collector-Emitter Saturation Voltage : V cE sat -2.0V (M ax.) • Complementary to KTA1042D/L. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING

2SC1971

Abstract: RF POWER TRANSISTOR NPN 2sc1971 equivalent transistor 1204 transistor 2sc1971 2Sc1971 transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1971 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions i 0 3.6 ± 0.2 9.1 ± 0.7

2SK2376

Contextual Info: 2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSV 2SK2376 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) l High forward transfer admittance

transistor D 288

Contextual Info: CDU CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator PIN CONFIGURATION 1 . BASE 2 COLLECTOR 3. EMITTER 4. COLLECTOR DIM •A o^=» 3 - A 8 C D £ F G H J K L M N MIN MAX

CSA1012

Abstract: CSC2562
Contextual Info: CSA1012, CSC2562 CSA1012 CSC2562 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR High Current Switching Applications •E oa ai DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1,40 3,75 3.88 2,29 2.79 2.54 3.43 0,56 12.70 14,73 6,35

transistor D 288

Abstract: transistor 614 CSA614 CSD288
Contextual Info: CSA614, CSD288 CSA614 CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.88 3.75 2,29 2.79 2.54 3.43 0,56 12,70 14.73 6.35

2SK2985

Contextual Info: 2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII 2SK2985 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 70 S (typ.)

3N160

Contextual Info: TYPE 3N160 P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTOR B U L L E T IN I NO . D L -S 7011149, M A R C H 1970 E N H A N C E M E N T -T Y P E t M O S S IL IC O N T R A N S IS T O R I For Applications Requiring Very High Input Impedance, Such as

2SC3378

Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
Contextual Info: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current

CSA1012

Abstract: CSC2562 ic 356 transistor CSA1012
Contextual Info: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75

transistor 614

Abstract: transistor D 288 CSA614 33T4 CSD288 transistor 388 max8080 D 1651 transistor
Contextual Info: IL CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0 .9 0 1.15 1,40 3,75 3.88 2,29 2.79 2,54 3.43 0 ,56 12.70 14.73

Contextual Info: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1674 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA TV PIE A M P L IF IE R S TUNER RF AMPLEFIER,MIXER,OSCILLATOR * High Current Gain-Bandwidth Product fT=600MHz Typ * High Power Gain Gpe=22d B at f=100MHz

Contextual Info: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1008 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR L O W F R E Q U E N C Y A M P L IF IE R M E D IU M S P E E D S W IT C H IN G * * * * Package: TO-92 Complement to 2SA708 High Collector-Base Voltage VCBO=80V