TRANSISTOR MARKING 4D Search Results

transistor marking 4D

Abstract: transistor laser sot-89 marking KIA7425F
Contextual Info: SEMICONDUCTOR KIA7425F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 4D KIA7425F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

transistor marking 4D

Abstract: PNP 400V MMBTA44 MMBTA94
Contextual Info: MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code

MMBTA94

Contextual Info: MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  A High Voltage Transistor L 3 3 C B Top View MARKING 1 1 2 K 4D E 2 D PACKAGE INFORMATION

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA94 TRANSISTOR PNP SOT–23 FEATURES  High Breakdown Voltage MARKING:4D 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER

9019 transistor

Abstract: 9019 sts9018
Contextual Info: STS9018 Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Max. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

6251-465-4DS

Abstract: 525k hall SMD marking codes Hall sensors
Contextual Info: MICRONAS Edition Aug. 8, 2002 6251-465-4DS HAL525, HAL535 Hall Effect Sensor Family MICRONAS HAL525, HAL535 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts

stc*9018

Abstract: STC9018N STC9018
Contextual Info: STC9018N Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Typ. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

STC9018SF

Abstract: STC9018 KSD-T5C007-000
Contextual Info: STC9018SF Semiconductor NPN Silicon Transistor Description • High frequency low noise amplifier application • VHF band amplifier application Features • Low noise figure : NF = 4dB Typ. at f=100MHz • High transition frequency fT = 800MHz(Typ.) Ordering Information

Contextual Info: Cam Positioner H8PS CSM_H8PS_DS_E_5_1 This Compact Cam Positioner, Popular for Its Ease-of-use, Now Comes with Even Better Functions. • Compact 8-, 16-, and 32-output Models available that are 1/4DIN size at 96 x 96 mm. • High-speed operation at 1,600 r/min and high-precision settings

2SC4244

Abstract: NPN TRANSISTOR SC-70
Contextual Info: TOSHIBA 2SC4244 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4244 UHF TV TUNER RF AMPLIFIER APPLICATIONS. Unit in mm 2.1 ±0.1 • Low Noise Figure : NF = 4dB Typ. • High Power Gain : Gpb = 17dB (Typ.) • Excellent Forward AGC Characteristics

transistor BC 339

Abstract: marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
Contextual Info: DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification Supersedes data of 1997 May 26 File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS PHILIPS Philips Semiconductors Product specification

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

3 PIN hall effect 506k

Abstract: Hall Effect Sensor Family 503K 509K hall effect IC 502K hall hall effect 506k 509A SOT89 hall sensor 504k hall sensor 506k hall 506A Magnetic Sensors marking code 506k sot89
Contextual Info: Hardware Documentation Data Sheet HAL 501.506, 508, 509, ® HAL 516.519, 523 Hall Effect Sensor Family Edition Nov. 27, 2003 6251-485-4DS HAL5xx DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction

transistor SOT23 4d

Abstract: MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low Collector-Emitter Saturation Voltage „ APPLICATIONS * Telephone Switching

NEC 2501

Abstract: TC-2178 resistor UJ marking
Contextual Info: DATAEvaluation SHEET AdLib OCR IVEC ELECTRON DEVICE SILICON TRANSISTOR- GN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE 2.1+0 .1 Maximum Voltages and Cur ents T, 25 OC

SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

Contextual Info: UTC MMBTA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =350mW *Low collector-Emitter saturation voltage 2 1 APPLICATIONS *Telephone switching *High voltage switch

MC 3041 opto

Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE

C-48U

Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

str 6707

Abstract: datasheet str 6707 str 6707 datasheet UL 2092 2108 npn transistor BC859AW Q 817 SOT323 marking 4814 ic str 6707
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Jul 01 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification PNP general purpose transistors

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

PT 2102 ic

Abstract: MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846
Contextual Info: This documentation process conversion measures necessary to comply with this revision shall be completed by 27 September 1999. INCH-POUND MIL-PRF-19500/412B USAF 27 July 1999 SUPERSEDING MIL-S-19500/412A(USAF) 19 June 1990 PERFORMANCE SPECIFICATION SHEET

STTA2006P

Abstract: STTA2006PI L3 marking
Contextual Info: STTA2006P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 20A VRRM 600V trr (typ) 30ns VF (max) 1.5V K FEATURES AND BENEFITS • ■ ■ ■ ■ SPECIFIC TO “FREEWHEEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY.