TRANSISTOR MARKING 702 Search Results

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

marking R1P

Abstract: SST2222A RXT2222A FDCT2222A MMST2222A PN2222A T100 T106 T116 T146
Contextual Info: Transistors NPN Medium Power Transistor Switching I UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A I External dimensions (Units : mm) •Features 1 ) BVceo< 40V (lc=10m A) 2 ) Complements the UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. ÜMT2222A •Package, marking and packaging specifications

marking R1P

Abstract: PN2222A ITT FDCT2222A MMST2222A PN2222A SST2222A T100 T106 T116 T146
Contextual Info: Transistors NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A I I External dimensions (Units : mm) •Features 1 ) BVceo< 40V (lc=10m A) 2 ) Complements the UMT2907A/SST2907A/MMST2907A /RXT2907A/PN2907A. ÜMT2222A •P ackage, marking and packaging specifications

NPN transistor x11

Abstract: marking code 2AW SL 100 NPN Transistor base emitter collector 6-pin "454" UMX11N 2SC2059K 6pin MARKING code T surface mount transistor 8 TRANSISTOR x11 HZ U35
Contextual Info: UMX11N Transistor, dual, NPN Features Dimensions Units: mm • available in UMT6 (UMT6) package • package marking: X11 • package contains two independent NPN transistors (2SC2059K) • • same size as UMT3 (UMT, C-70) so same placement machine can be

D2318

Contextual Info: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2318*Q, where ★ is hFE code and □ is lot number high DC current amplification, typically hFE = 1000 • low collector saturation voltage,

MDC03

Abstract: Marking TRANSISTOR 737 common collector pnp array common collector npn array MFW14 Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array
Contextual Info: MDC03 Transistor, array, 3 x NPN, 3 x PNP Features Dimensions Units: mm • • available in MFW14 package package marking: MDC03 • three NPN transistors with common emitter and three PNP transistors with common emitter are mounted in single package •

Contextual Info: 2SD1781K Transistor, NPN Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1781K; AF-*, where ★ is hFE code • extremely low collector saturation voltage • even though it is in a small package, it can draw large currents Dimensions (Units : mm)

131 Transistor

Abstract: TRANSISTOR 2SC 2SC4649 2SC2059K 2SC4099 SC-75 T106 T146 transistor 3bt marking 1F SMT3
Contextual Info: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available In SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099,2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA

surface mount 702 TRANSISTOR

Abstract: marking H4 702 TRANSISTOR npn MARKING 702 6pin
Contextual Info: UMH4N Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) package UMH4N (UMT6) package marking: H4 2.0±0.2 package contains two independent NPN digital transistors (DTC114TKA), each with one resistor same size as UMT3 (UMT, SC-70) so

Transistors specification with hybrid

Abstract: TRANSISTOR MARKING CODE R2A UMT3906 PN3904 2N3906 MMST3906 SST3906 T106 T10D T116
Contextual Info: Transistors PNP General Purpose Transistor I U MT3906/SST3906/M M ST3906/RXT3906/2N3906 •Features 1 BVceo< - 4 0 V le— 1mA) 2 ) Complements the UMT3904/SST3904/MMST3904/RXT3904/PN3904. # External dimensions (Units : mm) U M T3906 •P ackage, marking and packaging specifications

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

BJ 027

Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
Contextual Info: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA

Transistor MARKING CODE AW SOT89

Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
Contextual Info: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,

Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity

digital transistor array

Abstract: marking 702 sot363
Contextual Info: SIEMENS BCR 169S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=4.7kQ) Cl U 12 FI FI FI U lii ÜJ Type Marking Ordering Code Pin Configuration

TRANSISTOR d1760

Abstract: 2SD1760F5
Contextual Info: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760*Q , where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A

Contextual Info: 2SB1184F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: B1184^Q, where ★ is hFE code and □ is lot number Dimensions (Units: mm) • low collector saturation voltage, typically VCE(Sat) = ~°-5 v f° r 6.5 ±0.2 Ò

A1834

Abstract: transistor 1020 transistor surface mount to transistor 2SA 2SA1834F5 2SC5001 transistor marking CS transistor PNP 4 1020 transistor 2SA 016
Contextual Info: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available In CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834-AQ, where ★ is hFE code and □ is lot number low collector saturation voltage VcE(sat) - “0-16 V for lc = -4 A, lB = -0.05 mA

Contextual Info: BC857B Transistors PNP General Purpose Transistor I BC857B • I External dimensions Unite : mm Feature* 1 ) B V ceoC — 4 5 V ( lc = — 1m A) 2 ) Complements the BC847B. • Package, marking, and packaging specifications T ype B C 657B Package SST3 M a rk in g

Contextual Info: Transistors PNP G eneral Purpose Transistor BC858BW/BC858B I •F e a tu r e * •E x te rn a l dimensions Units : mm 1 ) B V ceo C — 3 0 V ( l c = — 1m A ) 2 ) Complements the BC848B/BC848BW. # Packag a. marking and packaging «pacifications Type BCÔ58BW

Contextual Info: Transistors NPN General Purpose Transistor I BC848BW/BC848B/BC848C fF M tu ra t •E x te rn a l dimensions Units : mm 1 ) BV ceo< 3 0V (Ic — 1mA) 2 ) C om plem ents the BC 858B /B C858BW . BC848BW •P a c k a g e , marking and packaging specifications

Contextual Info: Transistors SST6838 NPN General Purpose Transistor I SST6838 ♦ F e a tu re s ♦E x te rn a l dim ensions Units : mm 1 ) B V ceo < 4 0 V ( lc = 1 m A ) 2 ) Complements the SST6839. ♦ P a c k a g e , marking, and packaging specifications Type SST6838

transistor k 702

Abstract: TRANSISTOR S 802 kse800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

702 y TRANSISTOR

Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
Contextual Info: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor