TRANSISTOR MARKING 9M Search Results

d82 sot23

Abstract: B772SS D882SS
Contextual Info: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23

d82 sot23

Abstract: D882* transistor
Contextual Info: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23

d82 sot-23

Abstract: datasheet d882 B772SS D882SS d82 sot23
Contextual Info: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23

TRANSISTOR S 838

Abstract: 339 marking code transistor TR13 339 marking code transistor manual
Contextual Info: Package Details DPAK Transistor Case Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Transistor Case Tape Dimensions and Orientation (Dimensions in mm)

2SB1207

Contextual Info: Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0±0.2 Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage

2SC4715

Contextual Info: Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage

KTK211

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTK211 n c h a n n e l ju n c t io n fie l d EFFECT TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES • Low Noise Figure : NF=2.5dB Typ. (f=100MHz). • High Forward Transfer Admittance. ; I yts I = 9mS(Typ.)

N3010LS

Contextual Info: DMN3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V

Contextual Info: DMN3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V

N2009LS

Contextual Info: DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V

Contextual Info: DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 8mΩ @ VGS = 10V • 9mΩ @ VGS = 4.5V

test circuit 100MHz

Contextual Info: SEMICONDUCTOR KTK211 TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L FEATURES L ・High Forward Transfer Admittance. D ・Low Noise Figure : NF=2.5dB Typ. (f=100MHz). 2 H A 3 G : |yfs| =9mS(Typ.)

KTK211

Abstract: 20PFR dss2 ktk211y
Contextual Info: KTK211 SEMICONDUCTOR N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L Low Noise Figure : NF=2.5dB Typ. (f=100MHz). : |yfs| =9mS(Typ.) H Extremely Low Reverse Transfer Capacitance.

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

marking ADMI

Abstract: 2SK211
Contextual Info: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS + 0.5 2.5-0.3 • • • Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)

Contextual Info: DMN3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 9mΩ @ VGS = 10V • 13mΩ @ VGS = 4.5V

2SK881

Abstract: L180
Contextual Info: TOSHIBA 2SK881 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK881 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 2.1 ± 0.1 1.25 ±0.1 • • Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance : |Yfs|= 9mS (Typ.)

2SK211

Abstract: 2SK211Y 2SK211GR 2L2 marking
Contextual Info: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS. + 0.5 2 .5 - 0 .3 + 0.2 5 1 .5 - Q l 5 VHF BAND AM PLIFIER APPLICATIONS. Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)

SB2202

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.

2SK211Y

Abstract: 2SK211
Contextual Info: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS + 0 .5 2 5- 0 3 • • • Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)

2SB772 complement

Abstract: 2SB772L TO-92NL
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  1 FEATURES SOT-223 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S  SOT-89 APPLICATIONS * Audio power amplifier * DC-DC convertor

DDTB122LU

Abstract: DMN601TK LMN400E01 N-Channel mosfet sot-363
Contextual Info: LMN400E01 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET NEW PRODUCT General Description • LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of

Contextual Info: LMN400E01 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET NEW PRODUCT General Description • LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of