2SK211 Search Results

dc-dc converter hitachi

Abstract: HITACHI DIODE 2SK1404 2SK2118 DSA003639
Contextual Info: 2SK2118 Silicon N-Channel MOS FET ADE-208-1348 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control

2SK1155

Abstract: 2SK1156 2SK2114 2SK2115 DSA003639
Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET ADE-208-1346 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator

2SK245

Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch VDS min max 2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK215 2SK216 2SK217 2SK218 2SK219 2SK220H

Contextual Info: 2SK211 東芝電界効果トランジスタ シリコンNチャネル接合形 2SK211 ○ FM チューナ用 ○ VHF 帯増幅用 単位: mm • 雑音指数が小さい。 • 相互コンダクタンスが大きい。 : |Yfs| = 9 mS 標準 • 帰還容量が小さい。

Hitachi DSA002780

Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline 2SK2114, 2SK2115 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA002749

Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM

Hitachi DSA00279

Contextual Info: 2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline 2SK2116, 2SK2117 Absolute Maximum Ratings Ta = 25°C

2SK2110

Contextual Info: t * — •£? • S ' — NEC h h ^ ^ M O S Field Effect Transistor 2SK2110 2 S K 2 1 1 0 & N 3 1 -V Z J U t i i M O S F E T V S U , « fc : mm 5 V H ;Ü ^ IC < 7 )fc ti r t C J: « * < •> 51> ^ " i i T ' î o *> *£ Î5 W g ;< , * < * y 3 1> 7 ìl]g fc ìli,'£ ò & ,

1348 transistor

Abstract: 2SK2118 2SK2118-E PRSS0003AE-A
Contextual Info: 2SK2118 Silicon N Channel MOS FET REJ03G1000-0200 Previous: ADE-208-1348 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control

Contextual Info: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR M T SILICON N CHANNEL JUNCTION TYPE 1 1 • m. ■ ■ FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. • • Low Noise Figure : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)

Contextual Info: 2SK2118 Silicon N Channel MOS FET REJ03G1000-0200 Previous: ADE-208-1348 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control

Contextual Info: MOSFET IC SMD Type Type SMD Product specification 2SK2112 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 2.50-0.1 RDS on =1.2 MAX.@VGS=4.0V,ID=0.5A High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1

2SK2111

Abstract: C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS in mm is a switching element that can be directly driven by the output of 4.5 ± 0.1 an IC operating at 5 V.

2SK211GR

Abstract: 2SK211 2SK211-Y
Contextual Info: 2SK211 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK211 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • Low noise figure: NF = 2.5dB typ. (f = 100 MHz) · High forward transfer admitance: |Yfs| = 9 mS (typ.) · Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)

MOSFET marking smd

Abstract: SMD capacitance 82 pf 2SK2110
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK2110 SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS on =1.5 MAX.@VGS=4.0V,ID=0.3A High switching speed 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1

Hitachi DSA002749

Contextual Info: 2SK2116, 2SK2117 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM

Hitachi DSA00279

Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline 2SK2114, 2SK2115 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA00279

Contextual Info: 2SK2118 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control Outline 2SK2118

2SK1157

Abstract: 2SK1158 2SK2116 2SK2117 Hitachi DSA003755
Contextual Info: 2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate

Hitachi DSA001652

Contextual Info: 2SK2119 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter

Contextual Info: 2SK2116, 2SK2117 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline 2SK2116, 2SK2117

2SK1157

Abstract: 2SK1158 2SK2116 2SK2117 2SK2166 2SK2167 DSA003639
Contextual Info: 2SK2116, 2SK2117 Silicon N-Channel MOS FET ADE-208-1347 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator

K1404

Contextual Info: 2SK2118 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • No secondary breakdow n • Suitable for Sw itching regulator, D C-D C converter,M otor C ontrol

2SK1155

Abstract: 2SK1156 2SK2114 2SK2115 Hitachi DSA00395
Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate