TRANSISTOR MARKING AR GHZ Search Results

transistor marking 2d ghz

Abstract: BFG41OW
Contextual Info: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification

BFG403W

Contextual Info: DISC RETE S E M IC O N D U C TO R S M EUT BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors

"MARKING CODE P5"

Abstract: BFG425W
Contextual Info: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors

microwave transistor 03

Abstract: sot447a transistor marking code AL PPC5001T SC15 transistor 335 npn microwave power transistor
Contextual Info: DISCRETE SEMICONDUCTORS PPC5001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer 1997 Mar 03 PHILIPS

Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEA TUR ES D ES C R IPTIO N • High power gain Silicon NPN transistor encapsulated • Gold metallization ensures excellent reliability in a plastic SO T323 S-mini package.

fr5 transistor

Abstract: bfs17 Motorola transistor SOT23 w7 BSR56 motorola MN transistor BFS17 BSR57 BSR58 BSS63 BSS64
Contextual Info: n O T O R O L A SC Í X S T R S / R 6367254 F> W|b3b?5SM "Tt MOTOROLA SC XSTRß/R OüantM 96D 8 1 9 6 4 F D r - 3 h / s M A X IM U M R A TIN G S Sym bol Value U nit Collector-Em itter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 25 Vdc Sym bol Max U nit

transistor G13

Abstract: transistor BC548 bc54b BC548 and its h parameter values marking c7 SOT343 4330 030 36301 marking code fz BC548 stripline Amplifier with transistor BC548
Contextual Info: Philips Semiconductors P roduct sp ecification NPN 2 GHz power transistor BFG11W/X FEA TU R E S P IN N IN G • S O T 343 • High power gain PIN • High efficiency • Small size discrete power amplifier • 1.9 G H z operating area • Gold metallization ensures excellent reliability

Contextual Info: What HEW LETT 1"UM P A C K A R D Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41470 F eatures • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz

transistor 2xw

Abstract: transistor table RF Bipolar Transistor smd rf transistor marking
Contextual Info: T ar ge t D at a S he et , R e v . 1. 1 , D ec e m be r 2 00 8 BGB707L7ESD T ar ge t D at a S i G e :C W i d e b an d M M I C L N A w i t h In t e g r a t e d E S D P r o t e c t i on S m a l l S i g n a l D i s c r et e s Edition 2008-12-10 Published by Infineon Technologies AG,

IEC134

Abstract: LV2327E40R transistor marking AR ghz TRANSISTOR marking ar code
Contextual Info: -1-1- N AMER PHILIPS/DISCRETE ObE D ^53=131 ÜQ150G1 I LV2327E40R r- 33-£>? MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a com m on-em itter class-A linear wideband power am plifier from 2 ,3 to 2 ,7 G Hz. Diffused em itter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbS3T31 0D14T07 T • LAE4002S _ r-3 i-3ii MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

nec 13772

Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p

BFS17A

Abstract: BFS17AR marking E2
Contextual Info: TELEFUNKEN Semiconductors BFS 17 A / BFS 17 AR Silicon NPN Planar RF Transistor Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features D Low noise figure D High power gain

TRANSISTOR 9335

Abstract: BFG480W
Contextual Info: DISC RETE S E M IC O N D U C TO R S BFG480W NPN wideband transistor 1998 M ar 06 P relim inary specification File under D iscrete S em iconductors, SC 14 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification NPN w i d e b a n d t ransi st or

BFP540

Abstract: Transistor BFP540 BGB540 GPS05605 T0559
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,

ac 51 0865 75 849

Abstract: 7082 B amplifier 7082 B ic audio amplifier
Contextual Info: DATA SHEET SILICON TRANSISTOR juPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS FEATURES • (Unit: mm) Low Current, High Gain |Szie|2 = 9 dB T Y P . @ Vce = 2 V, le = 7 mA, f = 2 GHz

ap 4606

Abstract: nec 2651 ic CD 4047 8 pin ic 3773
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consum ption and High Gain PAC KAG E DIMENSIONS Units: mm |Szie|2 = 9.0 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz

Contextual Info: TO SH IB A 2SC5254 <;r s i s TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE MT V a V VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB f=2GHz t High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL

Contextual Info: T O SH IB A 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • t Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO VCEO Ve BO

ic 7912

Abstract: 7912 7912 ic datasheet DATA SHEET OF IC 7912 Ic D 1708 ag TRANSISTOR 7912 BGB550 SCT595 TRANSISTOR C 557 B transistor K 1352
Contextual Info: P r e l i m i n a ry d a t a s h e e t , B G B 5 5 0 , J u ly 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-07-31 Published by Infineon Technologies AG,

laser diode for free space communication

Abstract: GD16521-48BA GD16521-D STM-16 DIODE h4 1027ib 50W 50 ohm termination
Contextual Info: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.

Contextual Info: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.

pin configuration of ic 4518

Abstract: MRFIC 917
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line M RFIC0904 9 0 0 M H z G aA s T w o -S ta g e D river A m p lifie r The MRFIC0904 is an integrated driver am plifier designed for class A/B operation in the 800 MHz to 1 GHz frequency range. The design utilizes

2SC5091

Abstract: 2SC5256 HN9C04FT IS21E12
Contextual Info: TO SH IBA TENTATIVE HN9C04FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C04FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES