TRANSISTOR MARKING BOS Search Results

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

DIN 3021-3 STANDARD

Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
Contextual Info: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6

Contextual Info: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

Contextual Info: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network

FZ74

Abstract: dtc105 si9430 ic FZ749 equivalent transistor K 2767 CAPACITOR TANTALUM 0.033uf 16v 595D CD54 TC105 TC105303ECT
Contextual Info: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57µA Typ Supply Current 1A Output Current 0.5µA Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A

t1p42

Abstract: t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 FZT749 TC57
Contextual Info: TC57 Series Linear Regulator Controller FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application at hand. This results in lower dropout operation and often

MRC165

Abstract: PMBF4416 PMBF4416A MRC168 mrc160
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A

IC 2030 schematic diagram

Abstract: MA737 Samsung Tantalum Capacitor 9430 mosfet si9430 ic stepping motor coil construction FZ749 FZ74 Step-Down, External PNP Saturated Switch 2030 ic 5 pins
Contextual Info: TC105 PFM/PWM Step-Down DC/DC Controller FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC105 is a step-down Buck switching controller that furnishes output currents of up to 1A (max) while delivering a typical efficiency of 92%. The TC105 normally

IN5817 diode

Abstract: mtp3055el TC110301ECT IN5817 Si9410DY TC110 TC110303ECT TC110331ECT TC110333ECT TC110501ECT
Contextual Info: TC110 PFM/PWM Step-Up DC/DC Controller Features General Description • • • • • The TC110 is a step-up Boost switching controller that furnishes output currents of up to 300mA while delivering a typical efficiency of 84%. The TC110 normally operates in pulse width modulation mode

K 3053 TRANSISTOR

Abstract: BF909R BF909 marking M29 mosfet marking code gg transistor marking G1 PHILIPS FW 36 20 MLB944
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R

MCP130

Abstract: MCP120T-270I/TT TRANSISTOR to92 MARKING CODE DK MCP120T SK MCP130T-450I/TT MCP120 MCP1301 sot-23 Marking sj 485i marking
Contextual Info: MCP120/130 Microcontroller Supervisory Circuit with Open Drain Output FEATURES PACKAGES • Holds microcontroller in reset until supply voltage reaches stable operating level • Resets microcontroller during power loss • Precision monitoring of 3V, 3.3V and 5V systems

qs marking sot-89

Abstract: in5817 dk marking code sot-89 TC115501ECT
Contextual Info: TC115 PFM/PWM Step-Up DC/DC Converter Features Package Type • High Efficiency at Low Output Load Currents via PFM Mode • Assured Start-up at 0.9V • 80µA Typ Supply Current • 85% Typical Efficiency at 100mA • 140mA Typical Output Current @ VIN = 2.0V

transistor marking 4934

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TSF1P02H D Medium Power Surface Mount Products T M O S S ingle P -C h an n el Field E ffe c t T ran sisto r M o to ro la P re fe rre d O e v lc e M icro8"' devices are an advanced series of power MOSFETs

PWM generator based microcontroller pic

Abstract: TC642COA713 AN679 AN685 MMBT2222A TC642 TC642DEMO TC642EV 12v brushless cpu fan motor
Contextual Info: M TC642 PWM Fan Speed Controller with FanSense Technology Features • Temperature Proportional Fan Speed for Acoustic Control and Longer Fan Life • Efficient PWM Fan Drive • 3.0V to 5.5V Supply Range: - Fan Voltage Independent of TC642 Supply Voltage

5p03h

Abstract: FT5P03HDT3
Contextual Info: MOTOROLA Order this document by MMFT5P03HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Medium Power Surface Mount Products TMOS P-C hannel Field E ffect Transistor TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS RDS on = 100 m il MMFT5P03HD is an advanced power MOSFET which utilizes

SOT89B-1

Abstract: pin diagram OF IC mt 8870 1N5817 595D CD54 CDR125 IN5817 MA735 TC115 TC115501EMT
Contextual Info: M TC115 PFM/PWM Step-Up DC/DC Converter Features Package Type SOT-89-5 • High Efficiency at Low Output Load Currents via PFM Mode • Assured Start-up at 0.9V • 80 µA Typ Supply Current • 85% Typical Efficiency at 100 mA • 140 mA Typical Output Current @ VIN = 2.0V

Marking mk SOT89

Abstract: equivalent transistor TT 3034 marking code 604 SOT23 MCP102 MCP103 MCP111 MCP112 MCP121 MARKING KV SOT-89 DS91087
Contextual Info: MCP111/112 Micropower Voltage Detector Package Types • Ultra-low supply current: 1.75 µA max. • Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V, 4.38V and 4.63V • Resets microcontroller in a power-loss event • Active-low VOUT pin:

D4207

Contextual Info: MOTOROLA Order this document by MMDF4207/D SEMICONDUCTOR TECHNICAL DATA Medium Power Surface Mount Products MMDF4207 TMOS Dual P-Channel Field Effect Transistors Motorola Preferred Device H ir T IVIOS DUAL TMOS POWER MOSFET 6.2 AMPERES 20 VOLTS MiniMOS devices are an advanced series of power MOSFETs which utilize M otorola’s

TC125501ECT

Abstract: TC125 TC125301ECT TC125331ECT TC126 TC126303ECT TC126333ECT TC126503ECT SOT23A
Contextual Info: TC125/TC126 PFM Step-Up DC/DC Regulators Features General Description • Assured Start-up at 0.9V • PFM 100kHz Max Operating Frequency • 40µA Maximum Supply Current (VOUT = 3V @ 30mA) • 0.5µA Shutdown Mode (TC125) • Voltage Sense Input (TC126)

Contextual Info: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs

"MARKING CODE LE"

Abstract: BF1202WR BF1202 BF1202R dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR

Samsung Tantalum Capacitor

Abstract: 5060 murata 2030 ic 5 pins CD54 TC125 TC125301ECT TC125331ECT TC125501ECT TC126 TC126301ECT
Contextual Info: TC125 TC126 PFM Step-Up DC/DC Regulators FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC125/6 step-up Boost switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These

mosfet handbook

Abstract: K 3053 TRANSISTOR MAM192 BF909WR Dual-Gate Mosfet dual-gate
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 25 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR FEATURES

ASEA motor

Contextual Info: MOTOROLA O rder this docum ent by M M SF3P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 3P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs