TRANSISTOR MARKING SA 8 Search Results

BC848F

Abstract: BC858F
Contextual Info: 7 BC848F Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SA SOT-23F

BC848F

Abstract: BC858F
Contextual Info: BC848F 7 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858F Ordering Information Type NO. Marking BC848F Package Code SOT-23F SA

BC848

Abstract: Transistor SA sot-23 BC858
Contextual Info: BC848 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=30V • Complementary pair with BC858 Ordering Information Type NO. Marking BC848 Package Code SA SOT-23 : hFE rank

Contextual Info: 2SA1734T1 Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

marking SA

Contextual Info: 2SA1734T2G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

2SA1734R1G

Abstract: marking SA
Contextual Info: 2SA1734R1G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com

sanyo tv tuner

Abstract: 2sa1778 JT MARKING 2SA1669 2SC3770 2SC4401 2SC4402 2SC4403 2SC4405 2SC4406
Contextual Info: SA/Im VERY HIGH-FREQUENCY TRANSISTOR SERIES Ifcl Use * * * * Wide-band amplifiers UHF.VHF TV tuners CATV converters RF modulators ( )=Marking on MCP. CP, PCP. For PNP, (-)sign is omitted. P C : ( P a c k a g e :PCP) Mounted on PCB ( 2 50mm!X0. 8mm) Features *

CSD1306

Contextual Info: CDU CSD1306 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PA C K A G E O U TLIN E D E T A IL SA L L D IM EN SIO N S IN m m CSD1306E-6E _3.0_ 2.8 0.48 0.14 0.09 "031 Pin configuration JL 0.70 0.50 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

ic LA 7841

Abstract: LA 7841 LG 7CA 2005A transistor sc 308 2SD1145 784E S/LG 7CA
Contextual Info: Ordering number: EN 7 8 4 E 2SD1145 i SA t YO NPN Epitaxial P lanar Silicon Transistor High-Current Driver Applications A p p licatio n s . Relay drivers, ham m er drivers, lamp drivers, strobe DC-DC convertrers, motor drivers. F e a tu re s • Low saturation voltage

2005A

Abstract: 2SC3000 J160 transistor marking JB
Contextual Info: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SK222

Abstract: LM 2003A LM 8361
Contextual Info: Ordering number:EN 836F _ 2 S K 2 2 2 N-Channel Junction Silicon FET SAiYO i Low-Noise AF Amp Applications FEATURES * Ultra low noise figure * Large lyfsl. • Low gate leakage current. ABSOLUTE MAXIMUM RATINGS/Ta = 25° C unit V Drain-source voltage

b0349

Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
Contextual Info: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

Contextual Info: Ordering number: E N 2 8 0 9 2SA1656/2SC4363 PNP/NPN Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias Resistance J A p p licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s - On-chip bias resistance (R1 = 4.7kfi, R2=4.7kQ)

ktc4377

Abstract: SA SOT89
Contextual Info: KTC4377 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — 2.6 4.25 2.4 3.75 Low voltage 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2SK304

Contextual Info: Ordering number: EN 8 5 0 D A P P L IC A T IO N S • Ideal fo r potentiometers, analog switches, low frequency am plifiers, and constant current supplies. A B S O L U T E M A X IM U M R A T IN G S /T a = 25°C Drain-source voltage V d SS Gate-drain voltage

TA-1001

Abstract: ta1001 TA 1001 1601TI 2SD2098 T100 TA-10-01 transistor DJ marking
Contextual Info: 2SD2098 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2098; D J ^ , where ★ is hFE code • • 2SD2098 (MPT3) ^4.5c_+o0'2 .i 1.6±0.1 Ti sì low collector saturation voltage,

OPA512SM

Abstract: MIL-STD-883A Burr Brown part marking OPA512SM/883B 1A58 OPA512 1J17 high power operational amplifier marking CODE MHJ Ce-bS Series
Contextual Info: COMPONENTS OPA512SM/883B 0PA512SM/883B B U R R -B R O W N * REVISION NONE FEBRUARY, 1989 High Current, High Power, Hybrid MILITARY OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • WIDE SUPPLY RANGE: ±10V to ±50V OUTPUT CURRENT TO ±15A PEAK

TRANSISTOR b1181

Abstract: b1181 2SB1181F5
Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,

H9 transistor marking

Abstract: transistor h9
Contextual Info: 2SA1807F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 80 7*Q , where ★ is hFE code and □ is lot number • 2.3 Ö u> 51 -01 r• r « H9 SS • high breakdown voltage, BVq £q = —600 V

Contextual Info: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

Contextual Info: SIEMENS BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

MARKING E23

Abstract: transistor E23 DTC143Z DTC143ZKA DTC143ZSA DTC143ZUA E23 transistor
Contextual Info: DTC143ZUA/ZKA/ZSA DTC143ZUA/DTC143ZKA/DTC143ZSA 1 . 25¡ À 0 . 05 0. 76 ã R0. 25 05 3. 16+0. 2. 80¡ 0 À. 05 1. 60¡ À 0 . 05 1 0. 35 ( 3) 15. 30max 1. 9 À. 05 2. 00¡ 0 ( 3) 0. 30 ( 1) À. 05 2. 92¡ 0 0. 95¡ 0 À. 025 1. 01 REF 4. 00¡ 0 À. 05

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC143XUA/DTC143XKA/DTC143XSA R0. 25 05 3. 16+0. 2. 80¡ À 0. 05 1. 60¡ À 0 . 05 ( 1) 1. 9 À. 05 2. 00¡ 0 ( 3) 0. 35 ( 3) 0. 30 1. 30¡ À 0. 03 ( 1) 15. 30max