TRANSISTOR MJ 122 Search Results

transistor MJ 122

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

TDA 5331

Abstract: tda 2222 t06 sot 23 TDA 7283 capacitor 224 BLV33 0049543 SOT147
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D m bbSBIBl QDBñTñS 122 BLV33 IAPX V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended for use in linear v .h .f. amplifiers for television transmitters and transposers. Diffused emitter ballasting resistors and the application of gold sandwich

FF100R12KS4

Abstract: 600v 100a transistor MJ 122
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

transistor MJ 122

Abstract: MGY40N60D
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

c 3421 transistor

Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
Contextual Info: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:

MGW20N120

Abstract: transistor d 1557 305 Power Mosfet MOTOROLA
Contextual Info: MOTOROLA Order this document by MGW20N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW20N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

Contextual Info: GP1600FSS18-AAB GP1600FSS18-AAB Powerline N-Channel IGBT Module Advance Information DS5176-1.1 May 1999 The GP1600FSS18-AAB is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power

2SD1394

Abstract: 122OA
Contextual Info: SANYO SE MI CON DUCTOR CORP 15E I I 7Tl7Q7t DDDSDbS . 2SD1394 201OA r - 3 3 - a ? N P N Planar S ilicon D arlington Transistor D river A p p lica tion s 1220A Use: • Especially suited for use in switching of L load of motor driver, printer hammer driver, relay driver,etc.

Contextual Info: bb53T31 D05T740 OTT Philips Semiconductors APX ^roduc^pecificatlon VHF power transistor BLY92C/01 " " " " — • N A f1 E R p H IL IP S /]> IS C R E T E p PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

RF POWER TRANSISTOR NPN vhf

Abstract: BLY92C ceramic capacitor 47 pf Z609 philips ferroxcube transistor 4312 philips Trimmer 60 pf
Contextual Info: P hilips Sem iconductors J’b53T31 0 0 5 Iì 7 4 Q GTT • A P X ^ductspecificatlon BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE bTE D PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

transistor tt 2222

Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Contextual Info: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

MGY40N60D

Abstract: motorola 6810
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

BSM100GB120DLC

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GB120DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

FF100R12KS4

Abstract: 600v 100a
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF100R12KS4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

FF100R12KS4

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 100 R 12 KS4 Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage

Siren Sound Generator 5 sound

Abstract: police Siren Sound Generator sound siren police 5 tones 1167 police siren siren police HT84003 HT84006 HT84009 HT84012
Contextual Info: HT84XXX Magic VoiceTM Features • • • • • • • • • Operating voltage: 2.4V~5.0 V Programmable tone melody generator ADPCM, PCM synthesis Wide range of sample rate for voice synthesis Minimum sample rate step: 100Hz Voice melody mixed output

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

k104 transistor

Abstract: NMOS Transistor KA ir 119 e
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general

em55

Abstract: 5551l EM55450 9944 ir receiver EMM55000 npn 8050 em55451 EM55000 EM55000-2 em58
Contextual Info: EM55000/S/L Series INTEGRATED DEVELOPMENT ENVIRONMENT USER’S GUIDE Doc. Version 5.0 Applicable to EM55000/S/L IDE Version 2.9 & later ELAN MICROELECTRONICS CORP. March 2009 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM.

Contextual Info: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

specifications of CD4050 ic 16 pin diagram

Abstract: Q1 BC 558 transistor 30A-075 IC-85 3 phase induction motor fpga
Contextual Info: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES ® FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C

Contextual Info: U-series IGBT Modules 1,700 V Yasuyuki Hoshi Yasushi Miyasaka Kentarou Muramatsu 1. Introduction In recent years, requirements have increased for high voltage power semiconductor devices used in high voltage power converters such as industrial inverters.

police Siren Sound Generator sound

Abstract: Siren Sound Generator circuit diagram Siren Sound Generator 5 sound Siren Sound Generator Siren Sound Generator 9 sound HT842 police siren HT84XXX siren police siren police 5 tones
Contextual Info: HT84XXX Magic VoiceTM Features • • • • • • • • Operating voltage: 2.4V~5.0 V Programmable tone melody generator ADPCM, µPCM, PCM synthesis Wide range of sample rate for voice synthesis Minimum sample rate step: 100Hz Voice melody mixed output

Contextual Info: Make sure the next Card you purchase has. PW-8X010P6, PW-8X030P6, PW-8X075P6 MAGNUM MOTOR DRIVE SERIES 75A, 30A, 10A 600V MAGNUM MOTOR DRIVES ® FEATURES • 600 VDC Drive for 270 VDC Motors • 10 Amps @25°C, 10 Amps @85°C • 30 Amps @25°C, 30 Amps @85°C