TRANSISTOR MOTOROLA 277 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

mun5330dw

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual B ias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

MTD3055E

Contextual Info: MOTOROLA SC XSTRS/R F bf l E T> • b3h72SM 00^0535 330 MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor D PAK for Surface or Insertion Mount

Transistor motorola 418

Abstract: MRF1500 motorola rf Power Transistor Transistor motorola 277 10-04 MOTOROLA TRANSISTOR
Contextual Info: MOTOROLA Order this document by MRF1500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1500 Motorola Preferred Device Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz

MTP60N05HDL

Abstract: AN569 TRANSISTOR MOTOROLA
Contextual Info: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

LSE B9

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Prelim inary Inform ation NPN Silicon G eneral Purpose A m plifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications.

2SA1046

Abstract: transistor bc 851 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2N6107 equivalent BU326 BU108 BU100 BUL1 2N3055 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers.

MTD3055E

Abstract: dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage
Contextual Info: M O T O R O L A SC X S T R S / R F bflE ]> b3b72SM 00^0535 330 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor DPAK for Surface or Insertion Mount

mbt3904lt1

Abstract: BT3904LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MMBT3904LT1 NPN Silicon M otorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Collector- Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 6.0

rohm mtbf

Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

TRANSISTOR Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

transistor bd135

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON

MTPG

Abstract: MTPG0
Contextual Info: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET Pow er Field E ffe c t Transistor M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage

35 W 960 MHz RF POWER TRANSISTOR NPN

Abstract: TP3034 2779, transistor transistor j8 j8 er capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3034 The RF Line NPN Silicon RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and

Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power TVansistor The TP3022B is designed for com mon-emitter operation in the 900 MHz m obile radio band. Use of gold m e tallization and silicon diffused ballast resistors results in a m edium power output/driver transistor with state-of-the-art

a331j

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor T h e T P 3 0 2 4 B is a b a la n ce d tra n s is to r d e sig n e d s p e cific a lly fo r use in ce llu la r ra dio syste m s. T h is d e vice p e rm its th e d esig n of a C la s s A B p u sh -p u ll, high

transistor 313 smd

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor T h e M R F 6 4 0 1 is d e s ig n e d fo r C la s s A c o m m o n e m itte r, lin e a r p o w e r a m p lifie rs in th e 1 . 0 - 2 . 0 G H z fre q u e n c y ra n g e . It h a s b e e n s p e c ific a lly

12 volt dc to 220 volt ac inverter 1000 watts

Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit
Contextual Info: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,