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    TRANSISTOR MS 173 Search Results

    TRANSISTOR MS 173 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MS 173 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk1060

    Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
    Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104


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    PDF 2SK104 2SK105 2SK162 2SK163 2SK193 2SK195 2SK505 X10679EJCV0SG00 1996P 2sk1060 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234

    AQS210PS

    Abstract: AQS210PSX AQS210PSZ
    Text: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)


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    PDF AQS210PS 16pin 16-Pin 083inch AQS210PS AQS210PSX AQS210PSZ

    8085 transistor

    Abstract: No abstract text available
    Text: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)


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    PDF AQS210PS) 16-pin 083inch 8085 transistor

    AQS210PS

    Abstract: AQS210PSX AQS210PSZ IC 8085 pin
    Text: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)


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    PDF AQS210PS) 16-pin 083inch AQS210PS AQS210PSX AQS210PSZ IC 8085 pin

    AQS210PS

    Abstract: 8085 transistor AQS210PSX AQS210PSZ 8085
    Text: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)


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    PDF AQS210PS 16pin 16-Pin 083inch AQS210PS 8085 transistor AQS210PSX AQS210PSZ 8085

    AQS210PS

    Abstract: AQS210PSX AQS210PSZ IC 8085 pin
    Text: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)


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    PDF AQS210PS 16pin 16-Pin 083inch AQS210PS AQS210PSX AQS210PSZ IC 8085 pin

    PSH10

    Abstract: MPSH10 datasheet MPSH10 MPSH81
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification


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    PDF M3D186 MPSH10 MSB033 MPSH81. PSH10. SCA60 125104/00/04/pp8 PSH10 MPSH10 datasheet MPSH10 MPSH81

    relay pin out diagram

    Abstract: smoke detector system schematic diagrams smoke detector schematic diagrams AQS210PS 5 V DC RELAY 14 pin relay datasheet 5 pin relay data sheet 8 pin ic used in laptop chlorine detector circuit diagram notebook schematic diagram
    Text: PhotoMOS RELAYS Multi-function 16pin GU SOP Series AQS210PS GU General Use Type SOP Series Multi-function (DAA) 16 pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ ᕃ PhotoMOS Relay (for hookswitch, dial


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    PDF 16pin AQS210PS 16-Pin 083inch relay pin out diagram smoke detector system schematic diagrams smoke detector schematic diagrams AQS210PS 5 V DC RELAY 14 pin relay datasheet 5 pin relay data sheet 8 pin ic used in laptop chlorine detector circuit diagram notebook schematic diagram

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


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    PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    C67078-S1452-A2

    Abstract: No abstract text available
    Text: BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 Ω TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 C67078-S1452-A2 C67078-S1452-A2

    C67078-S1452-A2

    Abstract: 160 173 TRANSISTOR
    Text: BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 Ω TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 C67078-S1452-A2 C67078-S1452-A2 160 173 TRANSISTOR

    C200H-DA004

    Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
    Text: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to


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    PDF C200H-DA003 C200H-OD217 C200H-MAD01 C200H-IDS01-V1 C200H-DA004 C200H-IDS21 CS1W-MAD44 CS1W-AD041 CS1W-AD081 CS1W-DA041 C200H-DA004 CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224

    AQS210PS

    Abstract: 210TS AQS210TSX AQS210TSZ AQS210PSX AQS210PSZ AQS210T2S AQS210T2SX AQS210T2SZ AQS210TS
    Text: PhotoMOS RELAYS Multi-function 16pin GU SOP Series AQS210PS GU General Use Type SOP Series Multi-function (DAA) 16 pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ ᕃ PhotoMOS Relay (for hookswitch, dial


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    PDF 16pin AQS210PS 16-Pin 083inch I-37012 CH-6343 ASCT1B182E AQS210PS 210TS AQS210TSX AQS210TSZ AQS210PSX AQS210PSZ AQS210T2S AQS210T2SX AQS210T2SZ AQS210TS

    5R280CE

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R280CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPW50R280CE,IPP50R280CE 1Description TO-247


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    PDF IPx50R280CE IPW50R280CE, IPP50R280CE O-247 O-220 5R280CE

    D2C17

    Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf
    Text: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­


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    PDF BLY92C OT-120. 7Z68949 D2C17 BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf

    Untitled

    Abstract: No abstract text available
    Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


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    PDF BLY92C

    TRANSISTOR 58050

    Abstract: 58050 transistor
    Text: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN


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    PDF BF747 BF747 TRANSISTOR 58050 58050 transistor

    TLN103

    Abstract: TPS603 fulse
    Text: TOSHIBA {DI SC RE TE /O PT O} Ti 9097250 TOSHIBA <DISCRETE/OPTO D E I1 C H 7 E 5 D 99D 17328 □□173SÖ DT-MU?! TPS603 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR . OPTICAL SWITCH . POSITION SENSOR . TAPE, CARD READERS . ENCODERS


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    PDF TPS603 TLN103 TLU103 TLHX03 TLN103 TPS603 fulse

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    transistor BC 171

    Abstract: TRANSISTOR BC 173 BC 171 NPN transistor transistor bc 172 BC173B BC173C BC172B LVCEO-50V BC low noise bc 104 npn transistor
    Text: BC 171 . BC 172 • BC 173 NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR J FEATURES • H ig h • A v a ila b le Low B re a k d o w n in N o is e MECHANICAL OUTLINE APPLICATIONS V o lt a g e D iffe r e n t I-V c e o • * * • 5 0 V C u rre n t


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    PDF LVCEO----50V BCI73) transistor BC 171 TRANSISTOR BC 173 BC 171 NPN transistor transistor bc 172 BC173B BC173C BC172B LVCEO-50V BC low noise bc 104 npn transistor

    transistor BC 171

    Abstract: transistor BC 172B BC 1738 TRANSISTOR BC 171 NPN transistor BC173C BC173B BC173 BC171 BC172A TRANSISTOR MS 173 TE
    Text: BC 171 . BC 172 • BC 173 NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR J B re a k d o w n • A v a ila b le Low in N o is e M E C H A N IC A L O U T L IN E A P P L IC A T IO N S FEATURES • H ig h V o lta g e D iffe r e n t C u rre n t 4dB


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    PDF

    BF173

    Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
    Text: TELEFUNKEN ELECTRONIC filC D WÊ fiRSDGTb OOGSlbM BF173 '¡TitLitFOJJKliKGlM electronic Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: Video IF amplifier stages In common emitter configuration, especially In video IF power stages


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    PDF BF173 569-GS BF173 BF173 Transistor BF 145 transistor transistor bc 7-40

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television


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    PDF BU2508DF

    12/a1273 y k transistor

    Abstract: No abstract text available
    Text: CNX21 y V HIGH-VOLTAGE OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a silicon n-p-n photo­ transistor. The base is not accessible. Features o f this product: • very high isolation voltage o f 10 kV d.c. . • working voltage o f 10 kV (d.c.).


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    PDF CNX21 bbS3T31 12/a1273 y k transistor