TRANSISTOR MUI Search Results

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope suitable for surface mount applications.

clap switch

Abstract: clap switch applications BUL216
Contextual Info: rZ Z SCS-THOMSON ^7 # IHIIiGMilnaafiBiMllcg; BUL216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED HIGH OPERATING JUNCTION TEMPERATURE . HIGH RUGGEDNESS

MUM2211T1

Abstract: marking 8A 2216t
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its

TRANSISTOR LD25

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: Qs.iis.ij ^Ss-mL-donductoi lArooucfi, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF416 *BF418 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNPSILICIUM, PLANAR EPITAXIAL Compl. of BF 415 and BF 417

Contextual Info: eSe-rnl-donauctoi LPioaueti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: N AMER PHILIPS/DISCRETE I UL DbE D 1 bbS3T31 0D1SDST I MRB12175YR MAINTENANCE TYPE for new design use MRB11175Y PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications.

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: Wtipl H E W L E T T mLftMP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Am plifier Tested 900 MHz

Contextual Info: r e « HEW LETT mLUM P A C K A R D Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 F eatures Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

horizontal section in crt television

Abstract: Electron Tubes crt DEPLETION electron gun CRT
Contextual Info: ^ 5 1?' 1* 5 1 ° .- J È 1 ° 7i -Q 33-C& ° w 30^ ¥ . • V No p ic Ì & ^ ^ g ig vb |ii.’Qf fo c u s ,';! arriicFocus Transistor M § fe 3 i ; Dynamic focuè' transistor^chip "1; transistors, with Very high withstand, voltage, by HVP process " - . •’

MJ12010

Abstract: MR91S
Contextual Info: MOTOROLA SC XSTRS/R F 15 E 0 | t>3b72SM 00 05 1 0 3 2 | # MOTOROLA • SEMICONDUCTOR MJ12010 TECHNICAL DATA 10 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . specifically designed for use in C R T deflection circuits. • Collector-Emitter Voltage — V c E X “ 950 Volts

IGBT 1MBH60-100

Abstract: J9100
Contextual Info: 1MBH60-100 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR • : Outline Drawings bkü : Features •H i â X ' • i& ü ü in liS • Hi gh Speed Switching Low Saturation Voltage Hfti/tCMOS-ir— MUie • :y High Impedance Gate Small Package 0. 6 * ■ ffliÊ : Applications

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

BUX11

Contextual Info: fZ 7 ^ SCS-THOMSON 7# M O œ m iO T « ! BUX 11 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR D E S C R IP T IO N The BUX11 is a silicon muitiepitaxial NPN transis­ tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in­

0015P

Contextual Info: TOSHIBA 3SK258 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL DUAL GATE MOS TYPE < ;i TV TUNER, VHF RF AM PLIFIER APPLICATIONS. FM TUNER APPLICATIONS. • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.015pF Typ.

BUH715

Contextual Info: £ j ï SGS-THOMSON IILICTIiWIOlêS BUH715 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY • U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE # E 8 1 734 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR

2n5401TRANSISTOR

Abstract: 2n5401 toshiba 2n5401 transistor
Contextual Info: TOSHIBA 2N5401 Transistor Unit in mm | 5.1 MAX. Silicon PNP Epitaxial Type | For General Purpose Switching and Amplifier Applications 0.4 S Features 0.55MAX. 0.4 5 • High Collector Breakdown Voltage ' Vcbo = “ 160V, VCE0 = -150V • Low Leakage Current

BUX14

Abstract: transistor BUX14
Contextual Info: rz7 SCS-THOMSON ra ra w s *7M BUX14 [f HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUX14 is a silicon muitiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intended for high voltage, fast switching applications. A B S O L U T E M A X IM U M R A T IN G S

2N6702

Abstract: C 3311 transistor
Contextual Info: 7 ^ 2 3 7 002=1425 û • " 'T 3 3 -I SGS-THOMSON u n ilL J iS T M K i S G S-TH0MS0N 2 N6702 30E T> SWITCHING AND GENERAL PURPOSE DESCRIPTIO N The 2N6702 is a silicon muitiepitaxial planar NPN transistor and is mounted in Jedec TO-220 plastic package. It is intended for various switching and general pur­