TRANSISTOR N 332 AB Search Results

TRANSISTOR N 332 AB Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR N 332 AB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor B A O 331 Abstract: C 331 Transistor KSR1001 d 331 TRANSISTOR equivalent Contextual Info: KSR1001 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esisto r Built In • Sw itching circuit, Inverter, Interface circu it, D river C ircu it • B uilt in b ias R e sisto r (R,«4.7kÜ, R î «4.71cQ) • Com plem ent to KSR2001 ABSOLUTE MAXIMUM RATINGS (TA-251C)	OCR Scan	KSR1001 KSR2001 TA-251C) transistor B A O 331 C 331 Transistor KSR1001 d 331 TRANSISTOR equivalent	PDF
transistor 711 Abstract: DO 127 samsung tv Contextual Info: IME D I 7 ^ 4 1 4 2 Q007b?7 b \| NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic	OCR Scan	Q007b KSD5016 T-33-11 GQG77fe transistor 711 DO 127 samsung tv	PDF
Contextual Info: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)	OCR Scan	MJE3055T	PDF
equivalent transistor c 243 Abstract: samsung tv Contextual Info: SAMSU NG SEMICONDUCTOR INC D \| 7^4142 GOO?b b f l 5 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5013 T -3 3 -1 1 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN High Collector-Base Voltage VCbo=1500V ABSOLUTE M AXIM UM RATINGS (Ta = 25°C )	OCR Scan	KSD5013 0QG77fe equivalent transistor c 243 samsung tv	PDF
transistor a 92 a 331 Abstract: TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor Contextual Info: IME D I 7^4142 G00?b?4 I NPN TRIPLE DIFFUSED KSD5015 SAMSUNG SEMICONDUCTCR PLANAR SILICON TRANSISTOR INC COLOR TV HORIZONTAL OUTPUT APPLICATIONS T -33-11 TO-3P(F High Collector-Base Voltage Vceo-ISOOV ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic	OCR Scan	KSD5015 CTO-92 0QG77fe transistor a 92 a 331 TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor	PDF
samsung tv Abstract: 4142 Contextual Info: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KSC1520A O-202 80MHz GQG77fe samsung tv 4142	PDF
JE2955T Abstract: JE2955 Contextual Info: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 \| PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )	OCR Scan	MJE2955T G0077Gfl GQG77fe JE2955T JE2955	PDF
D F 331 TRANSISTOR Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27 Contextual Info: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )	OCR Scan	KSD5012 T-33-11 GQG77fe D F 331 TRANSISTOR lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27	PDF
d 331 TRANSISTOR equivalent Abstract: C 3311 transistor la 4142 74143 Contextual Info: SA MSUNG SEM ICO NDUCTOR INC 14E D \| 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)	OCR Scan	7Tb4142 KSD5010 GQG77fe d 331 TRANSISTOR equivalent C 3311 transistor la 4142 74143	PDF
equivalent of SL 100 NPN Transistor Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR" Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage	OCR Scan	KSD5005 GQG77fe equivalent of SL 100 NPN Transistor Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"	PDF
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D \| 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage	OCR Scan	KSB596 KSD526 GQG77fe	PDF
samsung 217 Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002 Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR	OCR Scan	0QQ7t41 KSD5002 GQG77fe samsung 217 samsung tv NPN Transistor 1A 800V to - 92 ksd5002	PDF
ts 4142 Abstract: ksa634 KSC1096 Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E 0 KSA634 42 0007485 fi PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Complement to KSC1096 • C ollector Current lc = -2 A • C ollector Dissipation PC=10W Tc =25',C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KSA634 KSC1096 GQG77fe ts 4142 ksa634 KSC1096	PDF
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SEPT 93_ FEATURES * 60 Volt V CE0 * 1 A m p c o n tin u o u s current P ,o r 1 W att R EFER TO ZTX451 FO R G R A P H S ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage	OCR Scan	ZTX451 100nA, 150mA,	PDF

KSC2749 Abstract: npn transistors 400V 1A To92 NPN TO92 400V Contextual Info: SAMSUNG SEM ICONDUCTOR INC KSC2749 14E 0 \| 7*^4142 0007573 5 \| NPN EPITAXIAL SILICON TRANSISTOR T - Ì 3 - 3 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic Rating Symbol Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	KSC2749 GQG77fe KSC2749 npn transistors 400V 1A To92 NPN TO92 400V	PDF
Contextual Info: SAM SUN G SE MI C O N D U C T OR INC MJE172 D \| 7^145 ÛÛQîtTB *f \| PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cofector-Base Voltage \| CoBector-Emitter Voltage	OCR Scan	MJE172 T-33-17	PDF
Contextual Info: SAMSUNG SE MICON DU CT OR MJE171 INC lqE 0 \| QOG?^^ 2 \| PNP EPITAXIAL SILICON TRANSISTOR T-33-17 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION TO*126 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic • Coliector-Base Voltage • Collector-Emitter Voltage	OCR Scan	MJE171 T-33-17 GQG77fe	PDF
transistor bc 7-25 014 Abstract: transistor bc 7-25 transistor Bc 540 transistor Bc 540 pin tn3904 transistor TN3904 transistor bc 138 bc 103 transistor TRANSISTOR BC 237 BC 540 TRANSISTOR Contextual Info: Transys Electronics L I M I T E D NPN SILICON PLANAR SWITCHING TRANSISTOR TN3904 TO-237 Plastic Package E BC General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous	Original	TN3904 O-237 mm/20 transistor bc 7-25 014 transistor bc 7-25 transistor Bc 540 transistor Bc 540 pin tn3904 transistor TN3904 transistor bc 138 bc 103 transistor TRANSISTOR BC 237 BC 540 TRANSISTOR	PDF
DMILL Abstract: RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector Contextual Info: 10MRAD Si DMILL Mixed Analog/Digital Radiation Hard BiCMOS An emerging need in HEP MPW The decision to develop new equipment for High Energy Physics (HEP) research has led the need for ultra rad hard technology. The radiation tolerance for detector electronics adjacent to proton collision	Original	10MRAD D-85386 I-20157 DMILL RAD HARD TRENCH TRANSISTOR BPSG HEP transistors hep silicon diode 1E14 temic jfet jfet n channel ultra low noise nuclear Neutron Radiation Detector	PDF
Contextual Info: / = 7 *7 M S G S - T H O M S O N s L IÈ T O « T D A 8 1 7 9 FS TV VERTICAL DEFLECTION BOOSTER • POWER AMPLIFIER ■ FLYBACK SUPPLY VOLTAGE SEPARATED ■ THERMAL PROTECTION DESCRIPTION Designed for monitors and high performance TVs, the TDA8179FS vertical deflection booster is able	OCR Scan	TDA8179FS TDA8179FS	PDF
transistor Bc 540 Abstract: transistor bc 7-25 TR BC 237 B transistor Bc 540 pin transistor bc 237 b TN2222A Contextual Info: Transys Electronics L I M I T E D NPN SILICON PLANAR SWITCHING TRANSISTOR TN2222A TO-237 Plastic Package E BC For use as a Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous	Original	TN2222A O-237 mm/20 transistor Bc 540 transistor bc 7-25 TR BC 237 B transistor Bc 540 pin transistor bc 237 b TN2222A	PDF
SPWM for three Phase Inverter Abstract: SPWM Inverter circuit sine wave modulated PWM Sine wave PWM DC to AC Inverter Circuits 1 HP SINGLE PHASE induction motor speed control using pwm inverter single phase SPWM IC three phase sine wave pwm circuit 3 phase sine wave pwm c source code design sine wave power inverter MODIFIED SINE WAVE INVERTER CIRCUIT Contextual Info: A N 1310 Using th e M C 68332 M icrocontroller for AC Induction M otor Control Prepared by: Jeff Baum and Ken Berrlnger Discrete Applications and System s Engineering HISTORY ABSTRACT AC induction motors have been used for many years in a variety of applications. Three phase AC induction motors	OCR Scan	AN1310 MC68332 SPWM for three Phase Inverter SPWM Inverter circuit sine wave modulated PWM Sine wave PWM DC to AC Inverter Circuits 1 HP SINGLE PHASE induction motor speed control using pwm inverter single phase SPWM IC three phase sine wave pwm circuit 3 phase sine wave pwm c source code design sine wave power inverter MODIFIED SINE WAVE INVERTER CIRCUIT	PDF
2SC2485 Abstract: at0209 2SA1061 Contextual Info: PANASONIC INDL/ELEK -CIO 1EE D • b*132fl52 001044^ D Silicon Epitaxal Base "lesa Transistor -r-33 -13 T'-33-2/ 2SA1061 PNP 2SC2485(NPN) TOP-3 Package (See Page 36 For Dimensions) 2SA1061 (PNP) Absolute Maximum Ratings (Ta=25°C) item Collector-Base Voltage	OCR Scan	2SA1061 2SC2485 2SC2485 at0209 2SA1061	PDF
transistor Bc 540 Abstract: transistor bc 7-25 TN3904 tn3904 transistor transistor Bc 540 pin Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTOR TN3904 TO-237 Plastic Package E BC General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage	Original	ISO/TS16949 TN3904 O-237 C-120 TN3904Rev080304E transistor Bc 540 transistor bc 7-25 TN3904 tn3904 transistor transistor Bc 540 pin	PDF

TRANSISTOR N 332 AB Search Results

TRANSISTOR N 332 AB Result Highlights (5)

TRANSISTOR N 332 AB Datasheets Context Search

transistor B A O 331

transistor 711

equivalent transistor c 243

transistor a 92 a 331

samsung tv

JE2955T

D F 331 TRANSISTOR

d 331 TRANSISTOR equivalent

equivalent of SL 100 NPN Transistor

samsung 217

ts 4142

KSC2749

transistor bc 7-25 014

DMILL

transistor Bc 540

SPWM for three Phase Inverter

2SC2485

transistor Bc 540