TRANSISTOR N 343 AD Search Results

Contextual Info: That H EW LETT WL'EM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High P erform ance, M edium Pow er, and Low N oise A p p lications 4-lead SC-70 SOT-343 Surface Mount Plastic

Contextual Info: What H E W L E T T 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Id eal for High Gain, Low N oise A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • T ran sition F requ en cy

Contextual Info: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

K105 transistor

Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

D 1413 transistor

Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Contextual Info: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249

Contextual Info: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.

cadstar pcb

Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
Contextual Info: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49

BPX81-4

Abstract: BPX81-3 BPX81 BPX-81-4 Typ BPX81-2 BPX80 BPX81-2 BPX82 BPX89 phototransistor array
Contextual Info: SIEMENS BPX81 2-10 TRANSISTOR ARRAYS BPX82-89, 80 SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX82-89, SO BPX81 Dimension “A” . Part No. Min. .141 (3.6) .1 2 6 (3 .2 ) Max. BPX 82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291

Contextual Info: t 353*131 □ a ifla s i 1 • DEVELOPMENT DATA BUT22BF BUT22CF This data sheet contains advance information and specifications are subject to change without notice* N AMER PHILIPS/DISCRETE 35E D SILICON DIFFUSED POWER TRANSISTORS T - 33-0? High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope intended for use

Contextual Info: rZ T S G S -T H O M S O N L9821 HIGH SIDE DRIVER ADVANCE DATA • 25A PEAK OUTPUT CURRENT ■ Ron = 100m£2 ■ DIAGNOSTIC AND PROTECTION FUNCTIONS . |iP COMPATIBLE ■ GROUNDED CASE ■ INRUSH CURRENT LIMITING CIRCUIT MULTIPOWER BCD TECHNOLOGY DESCRIPTION

2N3546

Abstract: MPQ3546 MPQ3646 MHQ3546
Contextual Info: M H Q 3 5 4 6 s ilic o n M PQ 3 5 4 6 QUAD DUAL-IN LINE PNP SILICON ANNULAR SWITCHING TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON SWITCHING TRANSISTOR . . . designed for iow-levei, high-speed switching applications. • Choice of Ceramic or Plastic Package

MRC252

Abstract: depletion mode BSD254 BSD254A BSD254AR
Contextual Info: Philips Semiconductors ^ 7 1 I 0 flgb 0 Db7 716 Ib b N-channel depletion mode vertical D-MOS transistors FEATURES • P H IN ^Productspecilication BSD254; BSD254A; BSD254AR ’ QUICK REFERENCE DATA • High-speed switching • No secondary breakdown. SYMBOL

lc dash 2 b-5

Abstract: siemens CNY17-2 b550 transistor PBTF
Contextual Info: SIEMENS CNY17 SERIES 5497 t r io s p h o t o t r a n s is t o r OPTOCOUPLER FEA TU RES • High Current Transfer Ratio CNY17-1,40 to 80% CNY17-2,63 to 125% CNY17-3,100 to 200% CNY17-4,160 to 320% • Breakdown Voltage, 5300 V • Field-Effeet Stable by TRIOS*

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • APX bbSBTBl 0026*175 263 A b L V iJ ^ I- V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers of television transmitters and transposers. Features:

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the

CRT electron gun

Abstract: electron gun CRT AH8308EC RS330 AH830
Contextual Info: /• */ / t/ f ' t/fcX Introduction The AH8308EC is a third generation hybrid triple RGB 8-bit video DAC that provides designers of color display system s with a com plete, selfcontained, ECL-compatible RGB com­ posite video subsystem in a 40-pin DIP. The AH8308EC features an advanced

CNV17F-4

Abstract: CNV17 CNY 42 optocoupler dioda CNV17F
Contextual Info: SIEMENS FEATURES • H igh C urrent T ran sfer R atio C N Y 1 7F -1,40-80% C N Y 1 7F -2,63-125% C N Y 1 7 F -3 ,100-200% C N Y 1 7 F -4 ,160-320% 17 CNY F S E R IE S PHOTOTRAÑSÍSTOR NO BASE CONNECTION OPTOCOUPLER Package Dimensions in Inches mm t fa i fg] f t l

lt1063

Contextual Info: u rm TECHNOLOGY LT1083/LT1084/LT1085 7.bK 5A, 3A Low Dropout Positive Adjustable Regulators F€ A T U A € S D C S C R IP T IO A • Three Terminal Adjustable The LT1083 series of positive adjustable regulators are de­ ■ Output Current of 3 A, 5A or 7.5 A

Optocoupler SFH 608

Contextual Info: SFH 608 SIEMENS FEATURES * Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - SFH608-3,100-200% - SFH608-4,160-320% - SFH608-5, 250-500% • Specified Minimum CTR at lF=0.5 mA, VCE=1.5 V: > 32% typ. 120% Good CTR Linearity with Forward Current Low CTR Degradation

Contextual Info: P H S IG E C p l e s s e y AD VANC E INFORMATION 3047 3 2 SL6442 1GHZ AMPLIFIER/MIXER Supersedes May 1992 Edition The SL6442 UHF Amplifier and Mixer is designed for use in cordless telephones, cellular telephones, pagers and lowpower receivers operating at frequencies up to 1GHz. It

BF 331 TRANSISTORS

Abstract: CIL TRANSISTOR 331 CIL TRANSISTOR TRANSISTOR TO-106 CIL 167 CIL 331 CIL331 00000CH CIL TRANSISTOR 343 transistor Bf 331
Contextual Info: METALtCAN & EPOXY TRANSISTORS • CONTINENTAL DEVICE INDIA 32E D ■ 53033=14 00000CH 5 ■ 71 PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min IC hFE at bias VCE ICM PTA ICBO VCE sat fT mA - Volts mA mW MA Volts MHz max

til 112 optocoupler

Abstract: f5 smd transistor smd transistor F5 smd transistor 608
Contextual Info: SIEMENS SFH 608 PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER FEATURES • Very High CTR at lF=1 mA, VCE=0.S V -SFH60B-2,63-125% -S F H «» W . 100-200% -S F H 608-4,160-320% - SFH6M -S, 280-500% • SpecttledMinimum CTO at lF=0.5 mA, VCE=1.S V: ¿32 % (typ. 120%

QP803SL

Abstract: 44t transistor QP804SL
Contextual Info: 0 . OPTEK P roduct B ulletin OP 8 OOSL June 1996 NPN Silicon Phototransistors Types OP8OOSL, QP801SL, OP8Q2SL, QP803SL, QP804SL, OP8Q5SL Features • • • • • Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range TO-18 hermetically sealed package