TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Search Results

TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
KTC4666 Contextual Info: SEMICONDUCTOR KTC4666 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. E FEATURE ・High hFE : hFE=600～3600. ・Noise Figure : 0.5dB Typ. at f=100kHz. B M M D J 3 1 G A 2 UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage	Original	KTC4666 100kHz. KTC4666	PDF
nmos transistor 0.35 um Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials Contextual Info: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power	Original	XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 3 1 2  FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. JEDEC TO-236 3 1 SOT-323 1	Original	MMBT2222A OT-23 600mA. O-236) OT-323 OT-523 MMBT2222AG-AE3-R MMBT2222AG-AL3-R MMBT2222AG-AN3-R MMBT2222AG-K03-1006-R	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA.  ORDERING INFORMATION Ordering Number Lead Free	Original	MMBT2222A 600mA. MMBT2222AL-AE3-R MMBT2222AL-AL3-R MMBT2222AL-AN3-R MMBT2222AL-K03-1006-R MMBT2222AG-AE3-R MMBT2222AG-AL3-R MMBT2222AG-AN3-R MMBT2222AG-K03-1006-R	PDF
100khz 5v transistor npn Abstract: MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL MMBT2222AL-AE3-R MMBT2222AG Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: MMBT2222AL Halogen-free: MMBT2222AG	Original	MMBT2222A 500mA. MMBT2222AL MMBT2222AG MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL-AE3-R MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222AL-AN3-R 100khz 5v transistor npn MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL MMBT2222AG	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 2 SOT-323 3 2 1 SOT-523 	Original	MMBT2222A OT-23 600mA. OT-323 OT-523 MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222AL-AL3-R MMBT2222AG-AL3-R MMBT2222AL-AN3-R	PDF
MMBT2222AG-AL3-R Abstract: MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL-AE3-R Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 3 1 2 SOT-323 3 2 1 SOT-523	Original	MMBT2222A OT-23 500mA. OT-323 OT-523 MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222A-AL3-R MMBT2222AL-AL3-R MMBT2222AG-AL3-R MMBT2222A MMBT2222A-AN3-R	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 1 2 FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 2 SOT-323 3 2 1 SOT-523	Original	MMBT2222A OT-23 600mA. OT-323 OT-523 MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222AL-AL3-R MMBT2222AG-AL3-R MMBT2222AL-AN3-R	PDF
transistor 1p Abstract: MMBT2222AL MMBT2222AL-AE3-R MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222A-G 1p npn switching transistor Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: MMBT2222AL Halogen-free: MMBT2222AG	Original	MMBT2222A 500mA. MMBT2222AL MMBT2222AG MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222A-AN3-R MMBT2222AL-AN3-R MMBT2222AG-AN3-R transistor 1p MMBT2222AL MMBT2222A MMBT2222A-G 1p npn switching transistor	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION  The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. 2 1 SOT-23	Original	MMBT5088/MMBT5089 OT-23 O-236) MMBT5088G-AE3-R MMBT5089G-AE3-R MMBT5088 MMBT5089 QW-R206-033	PDF
MMBT5088 Abstract: MMBT5089 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. ORDERING INFORMATION	Original	MMBT5088/MMBT5089 MMBT5088G-AE3-R MMBT5089G-AE3-R OT-23 MMBT5088 MMBT5089 QW-R206-033 MMBT5088 MMBT5089	PDF
MMBT2222A Abstract: MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222AL MMBT2222AL-AE3-R switch NPN SOT 100khz 5v transistor npn transistor T 523 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 2 FEATURES 1 SOT-23 3 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 2 1 SOT-523 *Pb-free plating product number:MMBT2222AL	Original	MMBT2222A OT-23 500mA. OT-523 MMBT2222AL MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222A-AN3-R MMBT2222AL-AN3-R MMBT2222A MMBT2222AL MMBT2222AL-AE3-R switch NPN SOT 100khz 5v transistor npn transistor T 523	PDF
PZT2222A Abstract: PZT2222A-AA3-R PZT2222AL-AA3-R Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PZT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 SOT-223 *Pb-free plating product number: PZT2222AL	Original	PZT2222A 500mA. OT-223 PZT2222AL PZT2222A-AA3-R PZT2222AL-AA3-R 16www PZT2222A PZT2222A-AA3-R PZT2222AL-AA3-R	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING SOT-523	Original	MMBT2222A 500mA. OT-523 MMBT2222AL MMBT2222A-AN3-R MMBT2222AL-AN3-R QW-R221-014	PDF

PN2222AL Abstract: PN2222A PN2222A-AB3-R PN2222A-AB3-T PN2222A-T92-B QW-R208-022 IB215 PN2222A to-92 PN2222AL-AB3-R Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 1 FEATURES SOT-89 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: PN2222AL	Original	PN2222A OT-89 500mA. PN2222AL PN2222A-AB3-R PN2222AL-AB3-R PN2222A-AB3-T PN2222AL-AB3-T PN2222A-T92-B PN2222AL-T92-B PN2222AL PN2222A PN2222A-AB3-R PN2222A-AB3-T PN2222A-T92-B QW-R208-022 IB215 PN2222A to-92 PN2222AL-AB3-R	PDF
Contextual Info: UNISONICTECHNOLOGIESCO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR N PN GEN ERAL PU RPOSE AM PLI FI ER ̈ DESCRI PT I ON The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. ̈	Original	MMBT5088/MMBT5089 MMBT5088G-AE3-R MMBT5089G-AE3-R OT-23 MMBT5088 MMBT5089 QW-R206-033	PDF
NTE190 Contextual Info: NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. Features: D High Collector–Emitter Breakdown Voltage: V BR CEO = 180V (Min) @ IC = 1mA	Original	NTE190 NTE190 O202N 200mA 200mA, 20MHz 100kHz	PDF
2n3904 transistor Abstract: 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 2N3906 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP Contextual Info: TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with	Original	2N3904 O--92 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz 2n3904 transistor 2N3904, transistor 2N3904 equivalent 2N3904 SOT-23 2N3904 transistor data sheet free download 2N3904 MMBT3904LT1 2n3906 PNP transistor DC current gain 2n3904 TRANSISTOR PNP	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR（ NPN ） TO—92 FEATURE •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is	Original	2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz	PDF
Contextual Info: 2N3904 Plastic-Encapsulate Transistors NPN TO—92 Features •NPN silicon epitaxial planar transistor for switching and Amplifier applications ·As complementary type, the PNP transistor 2N3906 is Recommended ·This transistor is also available in the SOT-23 case with	Original	2N3904 2N3906 OT-23 MMBT3904LT1 100KHz 100MHz	PDF
100khz 5v transistor npn Abstract: 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF Contextual Info: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Cllector-Base Voltage :KST5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation	Original	KST5088/5089 OT-23 KST5088 KST5089 100khz 5v transistor npn 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF	PDF
MARKING 5D NPN Abstract: MARK 5D SOT sot-23 Marking 3D Kst5089 Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088	Original	KST5088/5089 OT-23 KST5088 KST5089 MARKING 5D NPN MARK 5D SOT sot-23 Marking 3D	PDF
2N2369A Abstract: 2N2369ADCSM "Dual npn Transistor" Contextual Info: 2N2369ADCSM DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm inches FEATURES 3 1 4 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 A 6 5 6.22 ± 0.13	Original	2N2369ADCSM 100mA 100MHz 100kHz 300ms, 2N2369A 2N2369ADCSM "Dual npn Transistor"	PDF
2N2369A Abstract: 2N2369ACSM Contextual Info: SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN	Original	2N2369ACSM 2N2369A 100mA 100MHz 100kHz 300ms, 2N2369ACSM	PDF

TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Search Results

TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Result Highlights (5)

TRANSISTOR NPN 100KHZ COLLECTOR VOLTAGE 5V Datasheets Context Search

KTC4666

nmos transistor 0.35 um

100khz 5v transistor npn

MMBT2222AG-AL3-R

transistor 1p

MMBT5088

MMBT2222A

PZT2222A

PN2222AL

NTE190

2n3904 transistor

100khz 5v transistor npn

MARKING 5D NPN

2N2369A

2N2369A