TRANSISTOR NPN 12V 1A COLLECTOR CURRENT Search Results

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

IC 630

Abstract: marking DA1
Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance

Contextual Info: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

LTC1172

Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
Contextual Info: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents

RF POWER TRANSISTOR NPN 2sc2078

Abstract: 2SC2078 2sc2078 Transistor 27mhz rf ic 27mhz rf amplifier 2sc2078 amplifier RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2sc2078 datasheet 27mhz transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION •Collector-Emitter Voltage:VCER= 75V Min ;RBE=150Ω ·Collector Current:IC=3A APPLICATIONS ·27MHz RF Power Amplifier Applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

BUX99

Abstract: 250V transistor npn 2a 300V switching transistor 300V transistor npn 2a NPN Transistor 1A 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX99 DESCRIPTION •High Collector Current-IC= 1.5A ·High Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in fast switching applications

2sc3852

Abstract: transistor 2sc3852 Solenoid Driver 2a transistor 12v 1A NPN dc 12v motor driver ic 60V transistor npn 2a switching applications 60V transistor npn 2a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·DC Current Gain: hFE= 200(Min)@ IC= 0.5A APPLICATIONS ·Driver for solenoid and motor, series regulator and

U2T405

Abstract: t605 U2T305
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN FEATURES DESCRIPTION • • • • • Unitrode NPN Darlingtons consist of a two transistor circuit on a single monolithic planar chip. High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A

C3679 equivalent

Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Contextual Info: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.

2SC4381

Abstract: 2SA1667
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4381 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1667 APPLICATIONS

2SC4382

Abstract: equivalent for 2sa1668 2SA1668 transistor 2sC4382
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4382 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1668 APPLICATIONS

ELECTRONIC BALLAST 12v

Abstract: FJP5304D TRANSISTOR hFE-100
Contextual Info: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

UZT301

Abstract: U2T405 U2T305 R82E U2t301 U2T401 60V transistor npn 2a
Contextual Info: U2T301 U2T305 POWER DARLINGTONS U2T401 U2T405 5 Amp, 150V, Planar NPN o FEATURES • • • • • High Current Gain: 1000 min. @ lc = 2A Low Saturation Voltage: as low as 1.5V max. @ lc = 2A High Voltage: up to 150V min. VCER Monolithic Design Incorporating Multiple-Emitter Techniques

bc 617 transistor equivalent

Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720
Contextual Info: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP

NTE13

Contextual Info: NTE13 Silicon NPN Transistor Low Voltage Output Amp Features: D Low Collector–Emitter Saturation Voltage D High DC Current Gain D An M Type Mold package that Allows Downsizing of Equipment and Automatic Insertion by Taping and Magazine Packaging Absolute Maximum Ratings:

Contextual Info: DN200 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.2V Typ. @IC/IB=1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200 • Switching Application

DN200

Abstract: DP200
Contextual Info: DN200 Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200 • Switching Application

"Dual PNP Transistor" temperature compensation

Contextual Info: u n e A ß _ TECHNOLOGY M icro p o w e r R egulator a n d C o m p a ra to r F€ßTUR€S DCSCRIPTIOn • 40pA Supply Current ■ 125mA Output Current ■ 2.5V Reference Voltage ■ Reference Output Sources 1mA and Sinks 0.5mA

DN200P

Abstract: DP200P marking N04
Contextual Info: 000000000 DN200P Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200P • Switching Application

DN200F

Abstract: DP200F
Contextual Info: DN200F Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = 0.3V Typ. @IC /IB =1A/50mA) • Suitable for low voltage large current drivers • Complementary pair with DP200F • Switching Application

ZVN4306A TO-5

Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
Contextual Info: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage