TRANSISTOR NPN 29 Search Results
TRANSISTOR NPN 29 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TRANSISTOR NPN 29 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to |
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NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D | |
N5 npn transistor
Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
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NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6 | |
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic |
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BFR93A BFT93. MSB003 R77/02/pp13 | |
BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
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BFG135 OT223 CGY2020G SCA50 647021/1200/01/pp12 BFG135 amplifier BFG135 BFG135 - BFG135 MBB300 | |
marking code 2RContextual Info: PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat BISS transistor 29 November 2012 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. |
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PBSS4112PAN DFN2020-6 OT1118) PBSS4112PANP. PBSS5112PAP. AEC-Q101 marking code 2R | |
transistor DATA REFERENCE handbookContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a |
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BFG17A OT143 MSB014 OT143. transistor DATA REFERENCE handbook | |
BFG35Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor |
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BFG35 OT223 MSB002 OT223. 125006/03/pp16 BFG35 | |
Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS. |
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BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101 | |
BFG198Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a |
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BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198 | |
PDTC143XE
Abstract: PDTA143XE
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M3D173 PDTC143XE PDTC143XE MAM346 SC-75 OT416) SCA60 115104/1200/01/pp8 PDTA143XE | |
bcp68t1
Abstract: BCP68T3 BCP69T1 SMD310
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BCP68T1 OT-223 r14525 BCP68T1/D bcp68t1 BCP68T3 BCP69T1 SMD310 | |
BFG591Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 1995 Sep 04 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor |
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BFG591 OT223 R77/02/pp14 BFG591 | |
transistor smd 1E
Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
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BC846/BC847/BC848 OT-23 OT-23, MIL-STD-202G, BC846A BC847A BC847B BC847C BC848A BC848B transistor smd 1E SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a | |
str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
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M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202 | |
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marking P33 transistorContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT |
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M3D088 PDTC143TT MAM360 PDTC143TT SCA60 115104/1200/01/pp8 marking P33 transistor | |
Contextual Info: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON |
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2N5943 50dBmVI 40dBmVI 50dBmV) | |
Marking M60
Abstract: transistor 11
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NSM6056MT1G SC-74 NSM6056M/D Marking M60 transistor 11 | |
Contextual Info: IEIISU tSs-mi-Conductot Lpioaucti, L/na. £r t/ TELEPHONE: (973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 FAX: (973) 376-8960 U.SA MJE3440 SILICON NPN TRANSISTOR . NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar |
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MJE3440 MJE3440 OT-32 OT-32 GC73030 | |
Contextual Info: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR |
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NSM6056MT1G NSM6056M/D | |
2N5339
Abstract: P008B
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2N5339 2N5339 P008B | |
SOT-353 MARKING G2
Abstract: QW-R222-004
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DTC114Y OT-353 QW-R222-004 SOT-353 MARKING G2 | |
transistor DK 649Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMH7 NPN resistor-equipped double transistor Product specification File under Discrete Semiconductors, SC04 1998 Jun 29 Philips Semiconductors Product specification NPN resistor-equipped double transistor |
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MBD128 MGA893 SCA60 115104/1200/01/pp8 transistor DK 649 | |
Philips MARKING CODE
Abstract: 2108 npn transistor BP317 PDTC143TT
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M3D088 PDTC143TT 115002/00/02/pp8 Philips MARKING CODE 2108 npn transistor BP317 PDTC143TT | |
2N5339Contextual Info: r= 7 SGS-THOMSON m7# lianeæiiiisTissiiiei_ 2N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PR EFER RED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A. |
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2N5339 2N5339 |