TRANSISTOR NPN C4 NF Search Results

TRANSISTOR NPN C4 NF Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR NPN C4 NF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4	Original	MMBT1815 150mA MMBT1015 OT-113 QW-R210-004	PDF
transistor marking c4 Abstract: UTCMMBT1815 Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 2 3 MARKING SOT-523 C4	Original	MMBT1815 150mA MMBT1015 OT-523 QW-R221-009 transistor marking c4 UTCMMBT1815	PDF
MMBT1015 Abstract: MMBT1815 Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4	Original	MMBT1815 150mA MMBT1015 OT-113 QW-R210-004 MMBT1015	PDF
TRANSISTOR b100 Contextual Info: UTCMMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR	Original	UTCMMBT1815 150mA MBT1015 OT-23 QW-R206-014 TRANSISTOR b100	PDF
Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR	Original	MMBT1815 150mA MBT1015 OT-23 QW-R206-014	PDF
Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR	Original	MMBT1815 150mA MBT1015 OT-23 QW-R206-014	PDF
mbt1015 Abstract: MMBT1815 Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 Collector-Emitter voltage: BVCEO=50V Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR	Original	MMBT1815 150mA MBT1015 OT-23 QW-R206-014 mbt1015 MMBT1815	PDF
ic ma 8910 Abstract: 2SC4319 Contextual Info: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, \|S2iç\|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SC4319 S21el2 Coll53 ic ma 8910 2SC4319	PDF
100 pf, ATC Chip Capacitor Abstract: motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer Contextual Info: MOTOROLA Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 PHOTOMASTER CASE 305C–02, STYLE 1 SOE200–PILL R4 R5 R6 + VCC R7 – Q1 R2 R8 R3 C9 C4 C3 C10 TL11 TL10 C5 TL5 RF INPUT C8 TL6	Original	MRF6401PHT/D MRF6401 SOE200 MRF6401 MRF6401PHT/D* 100 pf, ATC Chip Capacitor motorola rf Power Transistor SMD Transistor Y14 100 pf, ATC Chip Capacitor 100A Motorola Potentiometer 8B TRANSISTOR SMD 470 resistor motorola rf device data book SMD Transistor 6f SMD potentiometer	PDF
smd transistor bcv62 Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B Contextual Info: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A	OCR Scan	MRF6401PHT/D MRF6401 BCV62 1600-200otorola, smd transistor bcv62 SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B	PDF
transistor rf m 1104 Abstract: motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641 Contextual Info: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Power Transistor CASE 333A– 02, STYLE 2 C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 50 W C1, C3 C2, C7	Original	MRF6414PHT/D MRF6414 1N4007 SD135 MRF6414 MRF6414PHT/D* transistor rf m 1104 motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641	PDF
Contextual Info: TO SH IB A 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 2 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F=1.8dB , \|S2lel2= 7-5dB f=2GHz Unit in mm M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC4322 SC-59	PDF
Contextual Info: TO SH IB A 2SC4325 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 5 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 • Low Noise Figure, High Gain. • N F=1.8dB , \|S2 lel2= 7-5dB f=2GHz ± 0.1 1 . 2 5 Í 0.1 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC4325 Na200	PDF
Contextual Info: TO SH IB A 2SC4320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 0 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain • N F = l.ld B , \|S2lel2= 15dB f=lG H z 'S M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC4320	PDF

Contextual Info: TO SH IB A 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 2 4 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 11 • Low Noise Figure, High Gain. • N F=1.8dB , \|S2lel2= 9-5dB f=2GHz . " S M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC4324 EMITTE098	PDF
MBB284 Abstract: BFG35 amplifier Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION	Original	BFG35 OT223 BFG55. BFG35 MSB002 OT223. MBB284 BFG35 amplifier	PDF
BFG135 amplifier Abstract: BFG135 A amplifier BFG135 TRANSISTOR BFG135 MEA946 MEA945 MBB298 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor	Original	BFG135 OT223 MBB285 MBB287 BFG135 amplifier BFG135 A amplifier BFG135 TRANSISTOR BFG135 MEA946 MEA945 MBB298	PDF
2N5179 Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10	Original	2N5179 2N5179 npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10	Original	2N5179 2N5179	PDF
TRANSISTOR ML6 Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain	Original	BFQ270 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor	PDF
MBB754 Abstract: BFG198 npn 2222 transistor Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a	Original	BFG198 OT223 MSB002 OT223. MBB754 BFG198 npn 2222 transistor	PDF
BFG35 Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570 Contextual Info: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.	OCR Scan	BFG35 OT223 OT223. MSA035 TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570	PDF
NPN planar RF transistor Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor	Original	BFG10; BFG10/X BFG10 NPN planar RF transistor BFG10 SOT143 C9 XN-71 transistor K 2937	PDF
Transistor W03 Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor Contextual Info: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high	Original	AN1465 START540 23dBm, OT-343 SC-70) 30mils Transistor W03 AN1465 ultra low noise NPN transistor ultra linearity rf transistor	PDF

TRANSISTOR NPN C4 NF Search Results

TRANSISTOR NPN C4 NF Result Highlights (5)

TRANSISTOR NPN C4 NF Datasheets Context Search

transistor marking c4

MMBT1015

TRANSISTOR b100

mbt1015

ic ma 8910

100 pf, ATC Chip Capacitor

smd transistor bcv62

transistor rf m 1104

MBB284

BFG135 amplifier

2N5179

TRANSISTOR ML6

MBB754

BFG35

NPN planar RF transistor

Transistor W03