TRANSISTOR NPN EPITAXIAL SILICON ZS 35 Search Results

NTE478

Contextual Info: NTE478 Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz Description: The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating

BFR93A E

Abstract: BFR93AR-T3 R5 SOT transistor BFR93A transistor npn Epitaxial Silicon zs 35 300MHZ 800MHZ BFR93A BFR93AR BFR93AR-T1
Contextual Info: PLANETA BFR93A/BFR93AR The RF Line NPN Silicon High-Frequency Transistor 1 3 DESCRIPTION The BFR93A/BFR93AR is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

transistor D 2588

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.

6852 d TRANSISTOR

Abstract: 2SC3357
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for PACKAGE DIMENSIONS Unit: mm low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.

transistor b 1624

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION T he 2 S C 3 5 4 5 is an NPN silico n ep ita xia l tra n sisto r in te nd ed fo r use as PACKAGE DIMENSIONS Units: mm U H F o scilla to r and m ixer in a tu n e r of a T V receiver.

BSS38

Abstract: IEC134
Contextual Info: BSS38 PH IL I P S INTERNATIONAL SbE » 7 1 1 0 Ô 2 L 00 42330 T7fl • PHIN — SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes.

BFR91

Abstract: TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45
Contextual Info: PLANETA BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and

MS1204

Abstract: 136MHz NPN planar RF transistor SD1019 max6535
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1204 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 80W POWER GAIN 9.0dB

TRANSISTOR L2

Abstract: transistor bf 194 E C B
Contextual Info: BFG325/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain

BSS38

Contextual Info: N AUER P H I L I P S / D I S C R E T E b'ìE D □□27Û53 fl44 BSS38 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is prim arily intended fo r general purpose switching and as driver fo r numerical indicator tubes.

transistor marking codes list

Abstract: BFG325W
Contextual Info: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain

transistor l2

Contextual Info: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain

A7 NPN EPITAXIAL

Abstract: Philips FA 145 BFG310W/XR BFG310W
Contextual Info: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain

SD1410-3

Abstract: transistor 355 SD-1410-3 Scans-0014615
Contextual Info: S G S —TH O M SO N OM C D I 7 ^ 2 3 7 G G O D G S S - T _ J j r- j' 3 - 0 ? SOLID S T A T E MICROWAVE SD1410-3 THOMSON-CSF COMPONENTS CORPORATION M o n tg o m e ry v H Ie , P A 1 8 9 3 6 « V ,. 2 1 5 3 6 2 -8 5 0 0 • T W X 5 1 0 -6 6 1 -7 2 9 9 •

2n222a

Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.

TRANSISTOR SD1444

Abstract: AJ10 SD1444
Contextual Info: H/IS c a n n i-*.*,inr»S IV U C rO S e m l P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive •■ IVS I I LVj VJ ■ ■ IV* I J V I I IV> ; IPA n I V ■«/ Montgomeryville, 18936-1013 Tel: 215 631-9840 ^ _ . jm jm jm o U l 4 4 4 RF & MICROWAVE TRANSISTORS

transistor power rating 5w

Abstract: SD1421 Thomson-CSF
Contextual Info: 04C D I S G S-THOMSON 7^5=123? OGGQGt.5 2 | D 7 SOLID STATE MICROWAVE! SD1421 THOMSON-CSF COMPONENTS CORPORATION ; Montgomeryvilfe, PA 18936.» 1215 362-8500 • TWX 510-661-72.99 c. 800 MHz COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1421 is an NPN Silicon Epitaxial Planar Transistor that was

blw95

Contextual Info: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a

Contextual Info: N AUER PHILIPS/DISCRETE bTE » bbS3^31 0D276S3 fl44 BSS38 APX SILICO N PLANAR EPITAXIAL T RA N SIST O R N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes. Q U IC K R E F E R E N C E D A T A

SD1088

Abstract: vk200 RFC vk200 rfc with 6 turns zd470 rfc vk200
Contextual Info: s G S - T H O M S O N OMC 0 | 7^ 53? aGOOGEl 4 | ° T -ìì-t* UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1088 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes tuned Q technology which consists of a matching network at

ferroxcube wideband hf choke

Abstract: transistor 4312 BLW50F PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier
Contextual Info: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance

118-136-MHz

Abstract: 118-136 mhz
Contextual Info: □ MC D I S G S-THOMSON □ D G 010G 7^237 7^33 ~ ° 7 Ü IE?;' *5 '•-’I ' •-> ' \ f :lÿjgj%bmeÿvjiÿB, P/yjB936^^^ VHF COMMUNICATIONS TRANSISTOR DESCRIPTION 230 The SD1013-3 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 volt AM class C rf amplifiers functional in the

transistor j304

Abstract: thomson microwave transistor
Contextual Info: S G S— THOMSON OSC D | 7 = ^ 2 3 ? OüGQlt.0 7 | ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION

chip die npn transistor

Abstract: BFG310W/XR
Contextual Info: CM PA K-4 BFG310W/XR NPN 14 GHz wideband transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features and benefits