TRANSISTOR P122 Search Results

Contextual Info: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes

DCX69

Abstract: DCX68
Contextual Info: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCX68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

Contextual Info: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

DCX68

Abstract: DCX69 MARKING P12 DCX69-16 J-STD-020D DS31264 marking code p12 sot89 p1225
Contextual Info: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCX68 Ideally Suited for Automated Assembly Processes

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

p1225

Abstract: MARKING P12 DCP68 DCP69 DCP69-16 J-STD-020D
Contextual Info: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes

p1225

Contextual Info: DCP69/-16/-25 20V PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

DCX69

Contextual Info: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Note 1

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

NEC D288

Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

transistor p98

Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC

NEC Ga FET marking L

Contextual Info: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Contextual Info: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

transistor P122

Abstract: P122
Contextual Info: polyfet rf devices P122 PATENTED GOLD METALLIZED General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices P122 PATENTED GOLD METALLIZED General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

panasonic inverter 707 manual

Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
Contextual Info: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change

transistor m 1104

Abstract: PS2801-4 PS2801-1 nec PS2801-1 PS2801-1-F3 PS2801-1-F4 PS2801-4-F3 PS2801-4-F4 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2801-1,PS2801-4 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications.

date code marking NEC TRANSISTOR

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2801 -1 ,PS2801 -4 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER -NEPOC S eries- DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications.

pd4050

Abstract: NEC motor PS2805-4-F3 PS2805 PS2805-1 PS2805-1-F3 PS2805-1-F4 PS2805-4 PS2805-4-F4 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2805-1,PS2805-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2805-1 and PS2805-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SOP for high density applications.

dali master schematic

Abstract: DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual
Contextual Info: Application Note Controlling Fluorescent Lamp Ballasts by Using 78K0/Ix2 This application note describes how to control fluorescent lamp ballasts by using the various features of the 78K0/Ix2 microcontroller. Details about power factor correction PFC controlled by using a PWM timer that operates in

d667 transistor

Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
Contextual Info: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.