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    TRANSISTOR PC 135 Search Results

    TRANSISTOR PC 135 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PC 135 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NC4D-JP-DC12V

    Abstract: NC2D-JP-DC48V
    Text: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat


    Original     		PDF ASCTB12E 201203-T NC4D-JP-DC12V NC2D-JP-DC48V

    E43028

    Abstract: NC2EBD-DC12V NC2D-JP-DC48V NC2-PS DC 3V relay 0.5A 220v ac DC 5V to DC 100V CIRCUIT DIAGRAM NC4D-JP-DC12V NC2EBD-DC24V NC2D-JP-DC12V NC2D-JP-DC24V
    Text: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat


    Original     		PDF

    NC2D-P-AC12V

    Abstract: NC4D-P-AC100V NC2EBD-DC24V NC2D-P-AC NC2D-AC100V NC4D-JP-AC100V nc2d-p-ac24v NC2D-JP-AC100V NC2D-JP-DC24V 680mh
    Text: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat


    Original     		PDF ASCTB12E 201209-T NC2D-P-AC12V NC4D-P-AC100V NC2EBD-DC24V NC2D-P-AC NC2D-AC100V NC4D-JP-AC100V nc2d-p-ac24v NC2D-JP-AC100V NC2D-JP-DC24V 680mh

    Untitled

    Abstract: No abstract text available
    Text: Automation Controls Catalog Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat


    Original     		PDF ASCTB258E 201402-T

    Untitled

    Abstract: No abstract text available
    Text: Automation Controls Catalog Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat


    Original     		PDF ASCTB12E 201309-T

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -150V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT5401LT1 OT-23 225mW -150V

    transistor 25

    Abstract: transistor mmbt5551lt1
    Text: MMBT5551LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25℃ * Collector-Emitter Voltage :Vceo=160V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT5551LT1 225mW OT-23 transistor 25 transistor mmbt5551lt1

    SILICON PNP POWER TRANSISTOR

    Abstract: y135
    Text: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current: IC = -1A • Collector Dissipation: PC = 2W ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC (DC) IC (Pulse) PC TJ T STG Collector-Base Voltage


    Original     		PDF KSB798 OT-89 cycle50% SILICON PNP POWER TRANSISTOR y135

    KSP24

    Abstract: No abstract text available
    Text: KSP24 KSP24 VHF Transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO IEBO IC PC Parameter Value 40 Units V Collector-Emitter Voltage


    Original     		PDF KSP24 KSP24

    KSP24

    Abstract: No abstract text available
    Text: KSP24 KSP24 VHF Transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO IEBO IC PC Parameter Value 40 Units V Collector-Emitter Voltage


    Original     		PDF KSP24 KSP24

    Untitled

    Abstract: No abstract text available
    Text: KSP24 KSP24 VHF Transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO IEBO IC PC Parameter Value 40 Units V Collector-Emitter Voltage


    Original     		PDF KSP24

    KST1623L7

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST1623L3/L4/L5/L6/L7 OT-23 KST1623L3 KST1623L4 KST1623L5 KST1623L6 KST1623L7

    KST812M6 transistor

    Abstract: KST812M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 KST812M6 transistor KST812M6

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


    Original     		PDF KST1009F1/F2/F3/F4/F5 OT-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5

    NPN Silicon Epitaxial Planar Transistor

    Abstract: transistor marking PB 2SC4215W SOT323 Marking bl Audio Frequency General Purpose Amplifier sot323 transistor marking Marking qy marking BR SOT sot323 marking K MARKING K SOT323
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z 2SC4215W Pb Lead-free Power dissipation. PC=100mW APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. Marking Package Code


    Original     		PDF 2SC4215W 100mW) OT-323 BL/SSSTF041 NPN Silicon Epitaxial Planar Transistor transistor marking PB 2SC4215W SOT323 Marking bl Audio Frequency General Purpose Amplifier sot323 transistor marking Marking qy marking BR SOT sot323 marking K MARKING K SOT323

    NTE14

    Abstract: "PNP Transistor" TRANSISTOR pc 135
    Text: NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: D High Power Compact FTR Package: PC = 750mW D High Breakdown Voltage: VCEO = 80V Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V


    Original     		PDF NTE14 750mW 100mA 500mA, NTE14 "PNP Transistor" TRANSISTOR pc 135

    SOT-323 marking L6

    Abstract: l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High DC current gain: hFE=200TYP. z High voltage: VCEO=50V. z Power dissipation. PC=200mW 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier.


    Original     		PDF 2SC1623W 200TYP. 200mW) OT-323 BL/SSSTF035 SOT-323 marking L6 l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn

    STO-23

    Abstract: KSA812 KSC1623
    Text: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY OSC STO-23 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    Original     		PDF KSC1623 KSA812 STO-23 STO-23 KSA812 KSC1623

    KSB798

    Abstract: No abstract text available
    Text: KSB798 KSB798 Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Dissipation : PC = 2W SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSB798 OT-89 PW10ms, cycle50% KSB798

    TPCA8018-H

    Abstract: 8018-H
    Text: TPCA8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8018-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 9.3 nC (typ.)


    Original     		PDF TPCA8018-H TPCA8018-H 8018-H

    FPN630

    Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
    Text: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol


    Original     		PDF FPN630 FPN630A FPN630 O-226 FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE

    Untitled

    Abstract: No abstract text available
    Text: KSB798 KSB798 Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol


    Original     		PDF KSB798 OT-89 PW10ms, cycle50% KSB798YTF

    Untitled

    Abstract: No abstract text available
    Text: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current lc=-1A • Collector Dissipation Pc=2W ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF KSB798 OT-89 7Rb4142

    BYD 24

    Abstract: No abstract text available
    Text: TOSHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : Rd S (ON) - lOOmO (Typ.)


    OCR Scan     		PDF TPC8302 20kil) --16V, BYD 24