TRANSISTOR PD 198 Search Results

TRANSISTOR PD 198 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR PD 198 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1902 transistor Abstract: 2902 TRANSISTOR BUZZER DRIVER transistor sit FMU1 FMU-1 Contextual Info: Tr 2SE ROHM CORP » T flS Ö T n OOGE^m Transistors#,*- T-Sl-Wo • Transistor Unit Composite Transistor • For Emitter Followers Resistance value Ri R2 Ra (kfi) (Mi) (Ml) 47 47 1.5 Type FMU1 Dimensions (Unit: mm), Vcc (V) Pd (mW) 15 200 Equivalent Integrated Circuits	OCR Scan	RU101K 1902 transistor 2902 TRANSISTOR BUZZER DRIVER transistor sit FMU1 FMU-1	PDF
Contextual Info: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	IRG4PC30S O-247AC O-247AC	PDF
irc30ud Abstract: IRGMC30U Contextual Info: International Ira]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC30U IRGMC30UD IRGMC30UU MIL-S-19500 O-254 ir*c30ud IRGMC30U	PDF
til 31a Abstract: IRGMC40U Contextual Info: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC40U IRGMC40UD IRGMC40UU MIL-S-19500 O-254 til 31a IRGMC40U	PDF
IRG4PC40S Contextual Info: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	IRG4PC40S O-247AC O-247AC IRG4PC40S	PDF
100-C Abstract: IRGMC30F 9714A Contextual Info: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC30F IRGMC30FD IRGMC30FU mil-s-19500 O-254 100-C IRGMC30F 9714A	PDF
2sc 1740 TRANSISTOR equivalent Abstract: 40HFL60 IRGMC40F 480V1 Contextual Info: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	pd96a IRGMC40F IRGMC40FD IRGMC40FU MIL-S-19500 O-254 2sc 1740 TRANSISTOR equivalent 40HFL60 IRGMC40F 480V1	PDF
Contextual Info: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500	PDF
AN-994 Abstract: IRG4BC30W-S Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC30W-S and10) AN-994 IRG4BC30W-S	PDF
IRGMC50F Abstract: IRGMC50FD IRGMC50FU 39AF Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF	PDF
IRG4BC20KD Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr Contextual Info: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short	OCR Scan	IRG4BC20KD T0220A8 IRG4BC20KD IGBT IRG4BC20KD IRGBC20KD2 transistor iqr	PDF
Contextual Info: PD - 9.1581 International I R Rectifier IRG4PC50S PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized tor minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	IRG4PC50S O-247AC	PDF
IRG4BC30S-S Contextual Info: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency	Original	IRG4BC30S-S EIA-418. IRG4BC30S-S	PDF
T3D 87 Abstract: t3d 99 G-100 IRGMC50U Contextual Info: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50U IRGMC50U IRGMC50UD IRGMC50UU MIL-S-19500 O-254 G-105 T3D 87 t3d 99 G-100	PDF

Contextual Info: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC20SPbF O-220AB O-220AB O-220AB.	PDF
Contextual Info: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994.	PDF
AN-994 Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Contextual Info: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.	Original	5616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF O-220 IRGB4B60KD1 IRGS4B60KD1 O-262 IRGSL4B60KD1 AN-994. AN-994 C-150 IRGS4B60KD1 IRGSL4B60KD1	PDF
TO-220AB transistor package Contextual Info: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4BC20SPbF O-220AB O-220AB O-220AB. TO-220AB transistor package	PDF
Contextual Info: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency	Original	IRG4BC30S-S EIA-418.	PDF
IRF 810 Abstract: IRG4BC30S-S Contextual Info: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency	Original	IRG4BC30S-S EIA-418. IRF 810 IRG4BC30S-S	PDF
IRGMVC50UD Contextual Info: International Ek ]Rectifier PD-9.825 IRGMVC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz Switching-loss rating includes	OCR Scan	IRGMVC50U 20kHz IRGMVC50UD IRGMVC50UU O-258 4ASS452 MIL-S-19500 IRGMVC50UD	PDF
Contextual Info: PD - 94922 IRG4PC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4PC30SPbF O-247AC O-247AC IRFPE30	PDF
035H Abstract: IRFPE30 Contextual Info: PD - 94922 IRG4PC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than	Original	IRG4PC30SPbF O-247AC O-247AC IRFPE30 035H IRFPE30	PDF
IRG4PC40K Abstract: irg4pc40kd Contextual Info: PD -9.1584 International l R Rectifier IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short	OCR Scan	O-247AC IRG4PC40KD IRG4PC40K irg4pc40kd	PDF

TRANSISTOR PD 198 Search Results

TRANSISTOR PD 198 Result Highlights (5)

TRANSISTOR PD 198 Datasheets Context Search

1902 transistor

ir*c30ud

til 31a

IRG4PC40S

100-C

2sc 1740 TRANSISTOR equivalent

AN-994

IRGMC50F

IRG4BC20KD

IRG4BC30S-S

T3D 87

AN-994

TO-220AB transistor package

IRF 810

IRGMVC50UD

035H

IRG4PC40K