TRANSISTOR PNP 12V 1A COLLECTOR CURRENT Search Results

DFN3020B-8

Abstract: diodes transistor marking k2 dual
Contextual Info: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A

Contextual Info: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

Contextual Info: ZUMT717 12V PNP POWER SWITCHING TRANSISTOR IN SOT323 Features Mechanical Data • • • • • BVCEO > -12V IC = -1.25A Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage VCE sat < -215mV @ IC = -1A RCE(SAT) = 150mΩ for a Low Equivalent On-Resistance

DFN2020B-3

Abstract: ZXTP717MA ZXTP717MATA sot23 transistor marking y2
Contextual Info: A Product Line of Diodes Incorporated ZXTP717MA 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -4A Continuous Collector Current Low Saturation Voltage -140mV max @ -1A

Contextual Info: A Product Line of Diodes Incorporated ZXTP717MA 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -4A Continuous Collector Current Low Saturation Voltage -140mV max @ -1A

IC 630

Abstract: marking DA1
Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • RSAT = 45mΩ for a low equivalent On-Resistance

Contextual Info: A Product Line of Diodes Incorporated ZXTD6717E6 ADVANCE INFORMATION COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 Features & Benefits Mechanical Data NPN Transistor • BVCEO > 15V • IC = 1.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A

LTC1172

Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
Contextual Info: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents

12W Sot23

Abstract: ZTX796A transistor pnp 12v 1a fzt90a ZTX90A voltage regulator sot23-6 1.5A 8 pin ic used in laptop transistor Comparison Tables laptop power regulator ic buck converter SOT23-6
Contextual Info: Application Note 26 Fast charging batteries with Zetex high current PNP transistors and benchmarq controller ICs Neil Chadderton Introduction Fast charge controller ICs The advances of digital technology and a waiting market have created a huge demand for portable products including cellular

transistor Comparison Tables

Abstract: ZTX950 ZTX796A ZTX951 Zetex 12W Sot23 zetex fzt788b ZETEX ZBD949 fzt788b 1N4148 1N5820
Contextual Info: Application Note 26 Issue 1 April 1996 Fast Charging Batteries with Zetex High Current PNP Transistors and Benchmarq Controller ICs Neil Chadderton Introduction Fast Charge Controller ICs The advances of digital technology and a waiting market have created a huge

2SA1488

Abstract: 2SA1488A 2SC3851A transistor pnp 12v 1a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1488A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851A APPLICATIONS ·Designed for audio and general purpose applications.

2SC3851

Abstract: transistor pnp VCEO 12V Ic 1A 2SA1488 transistor pnp 12v 1a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1488 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·DC Current Gain: hFE= 40(Min)@ IC= -1A ·Complement to Type 2SC3851 APPLICATIONS ·Designed for audio and general purpose applications.

2SB1382

Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)

2sb1383

Abstract: 2sd2083 transistor IC 12A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083

2SC4381

Abstract: 2SA1667 driver transistor hfe 60
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 APPLICATIONS

2sd2083

Abstract: 2SB1383 transistor 2sd2083 2sb1383 equivalent equivalent 2sb1383 transistor IC 12A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083

2SD2389 power transistor

Abstract: 2SD2389 audio Darlington 6A 2SB1559 transistor 2SB1559
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -6A ·Complement to Type 2SD2389 APPLICATIONS

2SA1667

Abstract: 2SC4381
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 APPLICATIONS

2SA1668

Abstract: 2SC4382 transistor 2SA1668 2sa1668 transistor pnp 200v 2sa166
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1668 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·DC Current Gain: hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4382 APPLICATIONS

Contextual Info: , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA699A Silicon PNP Power Transistor DESCRIPTION • High Collector Current -lc= -2A • Collector-Emitter Breakdown Voltage: V(BR)CEO= -40V(Min)

p04 sot223

Abstract: marking P04 P04 transistor DN200P DP200P
Contextual Info: DP200P Semiconductor PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage VCE(SAT = -0.3V Typ. @IC /IB =-1A/-50mA) • Suitable for low voltage large current drivers • Excellent hFE linearity • Complementary pair with DN200P

ZVN4306A TO-5

Abstract: ZTX618 power supply IRF830 APPLICATION mosfet driver with npn transistor high gain PNP POWER TRANSISTOR SOT23 npn high voltage transistor 500v sot23 zvn4306 AN18 irf830 datasheet pnp 500v
Contextual Info: Application Note 18 Issue 1 March 1996 Power MOSFET Gate Driver Circuits using High Current Super-β Transistors 6A Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing Neil Chadderton The pow er M OS F ET is c omm only presented and regarded as a voltage