TRANSISTOR PNP L5 Search Results

2N6111

Contextual Info: 2N6111 SILICON PNP SWITCHING TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is

Contextual Info: 2N6111 SILICON PNP SWITCHING TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is

2N6111

Contextual Info: 2N6111 SILICON PNP SWITCHING TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is

HIGH VOLTAGE PNP POWER TRANSISTOR

Abstract: MJE5852 l5 transistor PNP
Contextual Info: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching

MJE5852

Contextual Info: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching

MJE5852

Contextual Info: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using High

MSA035

Abstract: BFQ246 MSB002
Contextual Info: Philips Semiconductors Preliminary specification PNP video transistor BFQ246 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package.

MJE5852

Contextual Info: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY • ■ ■ APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ 3 1 DESCRIPTION The MJE5852 is manufactured using High

MPS-L51

Abstract: transistor BF 2030
Contextual Info: MPS-L51 SILICON HIGH VOLTAGE PNP SILICON ANNULAR TRANSISTOR . . . designed for general-purpose, high-voltage amplifier applications. • PNP SILICON AMPLIFIER TRANSISTOR High Breakdown Voltages B V c E O = 100 Vdc (Min), B V c b O “ 100 Vdc (Min) • Low Saturation Voltage

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR . HIGH VOLTAGE CAPABILITY APPLICATIONS: . SWITCHING REGULATORS . MOTOR CONTROL . INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage

Contextual Info: Central" CMLT591E Semiconductor Corp. SURFACE MOUNT PICOmini PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VQ ^gat 1.0 Amp transistor, epoxy molded in a space saving PICOmini™ SOT-563 surface mount package and designed

Contextual Info: Central CMLT591E SURFACE MOUNT PICOminiTM PNP SILICON TRANSISTOR CC CC TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VCE Sat 1.0 Amp transistor, epoxy molded in a space saving PICOmini SOT-563 surface mount package and designed

CMLT591E

Abstract: common collector PNP
Contextual Info: CMLT591E SURFACE MOUNT PICOminiTM PNP SILICON TRANSISTOR CC CC E B Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VCE Sat 1.0 Amp transistor, epoxy molded in a space saving PICOmini SOT-563 surface mount package and designed

Y2923

Abstract: 2sc 965 transistor b0961 Q62702-S154 lfe10
Contextual Info: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistor is particularly intended for

Contextual Info: CMLT591E SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT591E type is a PNP Low VCE Sat 1.0 Amp transistor, epoxy molded in a space saving PICOmini CC CC E B SOT-563 CASE SOT-563 surface mount package and designed

ZXT953K

Abstract: ZXT953KTC of ZXT953KTC
Contextual Info: ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits

ZXT951K

Abstract: ZXT951KTC ZXT951 Bv 42 transistor
Contextual Info: ZXT951K 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -60V : RSAT = 53m typical; IC = -6A DESCRIPTION Packaged in the D-PAK outline this high current high performance 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

ZXT790AK

Abstract: ZXT790AKTC ZXT790A
Contextual Info: ZXT790AK 40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power

2N6668

Contextual Info: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1

2N6668

Contextual Info: 2N6668  SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER 1 2

transistor BS 170

Abstract: 2N6668 2n666
Contextual Info: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1

J200M

Contextual Info: h 7 'y UMC4N FMC4A • UM C4N/FM C4A 2 /Transistors /Dual Mini-Mold Transistor NPN/PNP v 'J3> Epitaxal Planar NPN/PNP Silicon Transistor Z -4 "J f - > ? Ulfe/Switching Circuit 1W f * \r ; ä E l /Dimensions Unit : mm « Ä 1) UMT (SC-70), SMT (SC-59) t |h] -