TRANSISTOR PNP VCBO 25V Search Results

TRANSISTOR PNP VCBO 25V Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini

TRANSISTOR PNP VCBO 25V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE395 Contextual Info: NTE395 Silicon PNP Transistor Wide Band Linear Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V	Original	NTE395 110mA 800MHz 860MHz, 200MHz NTE395	PDF
2AK TRANSISTOR Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak Contextual Info: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage	Original	MMBT3906K MMBT3906K OT-23 2AK TRANSISTOR PNP Epitaxial Silicon Transistor sot-23 marking 2AK MMBT3906K 2ak	PDF
"PNP Transistor" Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor Contextual Info: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V	Original	NTE226 NTE226 200mA 200mA, "PNP Transistor" germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor	PDF
Contextual Info: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage	Original	MMBT3906K MMBT3906K OT-23	PDF
Contextual Info: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo =2N41 25: 30V 2N4126: 25V * Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO -3 0	OCR Scan	2N4125/4126 2N4126: 10fiA, 100MHz	PDF
Contextual Info: FJX733 FJX733 Low Frequency Amplifier • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage	Original	FJX733 FJX945 OT-323	PDF
Contextual Info: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage	Original	FJX733 FJX945 OT-323	PDF
FJX733 Contextual Info: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage	Original	FJX733 FJX945 OT-323 FJX733	PDF
FJX733 Abstract: FJX945 Contextual Info: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage	Original	FJX733 FJX945 OT-323 FJX733 FJX945	PDF
FJX733 Abstract: FJX945 Contextual Info: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage	Original	FJX733 FJX945 OT-323 FJX733 FJX945	PDF
transistor s9012 Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013 Contextual Info: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO	Original	S9012 -500mA 625mW S9013 -50mA -500mA -50mA transistor s9012 S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013	PDF
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA733 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage VCBO= -60V • Complement to KSC945 ABSOLUTE MAXIMUM RATINGS TA =251! C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current	OCR Scan	KSA733 KSC945	PDF
Contextual Info: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 • Collector-Base Voltage: VCBO= -30V • Low Collector-Emitter Saturation Voltage: VCE sat = -0.15V(TYP) • Complement to KSC184 ABSOLUTE MAXIMUM RATINGS (TA =25°°C) Characteristic	Original	KSA642 KSC184	PDF
BC327 Abstract: BC328 BC327 equivalent transistor BC328 BC327 transistor Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value VCBO Collector-Base Voltage	Original	BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA BC327 BC328 BC327 equivalent transistor BC328 BC327 transistor	PDF

2N6076 Abstract: fairchild low power transistor Contextual Info: 2N6076 PNP Small Signal Transistor Features • BVceo .25V Min • hFE . 100(Min) @ Vce=10V, Ic=10mA • Pb free Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage	Original	2N6076 2N6076 fairchild low power transistor	PDF
KSC3488 Contextual Info: KSA1378 KSA1378 Low Frequency Power Amplifier • Collector Power Dissipation : PC= 300mW • Complement to KSC3488 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO	Original	KSA1378 300mW KSC3488 O-92S PW10ms, cycle50% Volt000 KSA1378 KSA1378GBU KSC3488	PDF
KSA1150 Abstract: KSC2710 Contextual Info: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter	Original	KSA1150 300mW KSC2710 O-92S PW350ms, cycle50% KSA1150 KSC2710	PDF
KSA1378 Abstract: KSC3488 Contextual Info: KSA1378 KSA1378 Low Frequency Power Amplifier • Collector Power Dissipation : PC= 300mW • Complement to KSC3488 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO	Original	KSA1378 300mW KSC3488 O-92S PW10ms, cycle50% KSA1378 KSC3488	PDF
KSC2710 Contextual Info: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter	Original	KSA1150 300mW KSC2710 O-92S PW350ms, cycle50% Breakdow63 O-92S KSC2710	PDF
KSC3488 Contextual Info: KSA1378 KSA1378 Low Frequency Power Amplifier • Collector Power Dissipation : PC= 300mW • Complement to KSC3488 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO	Original	KSA1378 300mW KSC3488 O-92S PW10ms, cycle50% O-92S KSC3488	PDF
2SB0790 Abstract: 2SB790 2SD969 Contextual Info: Transistor 2SB0790 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage	Original	2SB0790 2SB790) 2SD0969 2SD969) 2SB0790 2SB790 2SD969	PDF
KSA1150 Abstract: KSC2710 Contextual Info: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter	Original	KSA1150 300mW KSC2710 O-92S PW350ms, cycle50% KSA1150 KSC2710	PDF
2SA1512 Abstract: 2SC1788 Contextual Info: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm ● ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage	Original	2SA1512 2SC1788 2SA1512 2SC1788	PDF
2SB0790 Abstract: 2SB790 2SD969 Contextual Info: Transistor 2SB0790 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 2.5±0.1 (Ta=25˚C) (1.0) (0.85) Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage	Original	2SB0790 2SB790) 2SD0969 2SD969) 2SB0790 2SB790 2SD969	PDF

TRANSISTOR PNP VCBO 25V Search Results

TRANSISTOR PNP VCBO 25V Result Highlights (5)

TRANSISTOR PNP VCBO 25V Datasheets Context Search

NTE395

2AK TRANSISTOR

"PNP Transistor"

FJX733

FJX733

FJX733

transistor s9012

BC327

2N6076

KSC3488

KSA1150

KSA1378

KSC2710

KSC3488

2SB0790

KSA1150

2SA1512

2SB0790