TRANSISTOR S 812 Search Results

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

transistor 808

Abstract: t3n8 transistor BUX 48 BUX44 bux c
Contextual Info: *BUX44 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS TO R S IL IC IU M N P N , M ESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif recommandé High speed, high curre n t, high po w er transistor Transistor de puissance rapide, fo r t courant

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: Motor driver ICs PNP transistor array BA6254FS The BA6254FS has been developed as a low-saturation output, upper-side transistor array for iow-voltage m otor drive applications. The three PNP transistors have a common emitter. •A p p lic a tio n s Motor drivers

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

transistor BFT 95

Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
Contextual Info: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !

TRANSISTOR S 812

Abstract: tea2018 TEA2019
Contextual Info: S G S -T H O M S O N TE A 2019 ü ü 8 D Ê ll[L liË T M S R !IO Ê i CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A CURRENT LIMITATION TRANSFORMER DEMAGNETIZATION AND

Contextual Info: h7 / T ransistors UMG10N h-7 > V ^ ^ / D u a l Mini-Mold Transistor 7 i7 /R - i- ^ K 7 J l ' J l ' - t M N P N y lJ 3 > h 7 > y * $ Epitaxal Planar NPN Silicon Transistor < > / \ ' - 2 H y 'f / ’v/Inverter Driver • 1 U M T S C -7 0 ) /Dimensions (Unit : mm)

CET451AN

Contextual Info: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 7.2A , RDS ON =35mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. 8 G D S D S D SOT-223 S G G SOT-223 (J23Z)

2C3716HV

Abstract: OR100
Contextual Info: 4bE D b3b7SSH O O ^ S 1! 6 • M O T b T -3 3 -O S MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA MW DM0 unm 2C3716HV Chip NPN Silicon Power Transistor Discrete Military Operation . .designed for medlum-speed switching and amplifier applications.

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

Contextual Info: TITLE: U N L E S S O THERW ISE NOTED REVISION G D IM E N SIO N S A R E IN IN C H ES ONE PLACE DECIMALS TWO PLACE DECIMALS ±.1 ±.01 T O L E R A N C E S ARE: THREE PLACE DECIMALS FOUR PLACE DECIMALS ±.005 ± .00 20 TRANSISTOR SOCKET ANGLES ± DWG NO: 2" TO—5 8 2 0 —GT

4221 motorola transistor

Abstract: MOTOROLA 4221 MJ200
Contextual Info: 6 3 6 7 2 5 4 MOTOROLA S C <XS TR S/ R F MOTOROLA 89D 7 9 9 9 2 DElb3t,?ES4 7 |~ D T - J 5 - 3 S uraer this data sheet by MJ200AV120/D SEMICONDUCTOR TECHNICAL DATA NPN Silico n Pow er Transistor Module M J 2 0 0 A V 1 2 0 Energy Management Series DUAL TRI-STAGE

CET451AN

Contextual Info: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 30V, 7.2A, R ds o n =35 itiQ @Vgs=10V. R d s (o n )=50 it iî 2 @Vgs=4.5V. • High dense cell design for low R d s <o n ). • Rugged and reliable. • SOT-223 Package.

2SK812

Abstract: 2sk8
Contextual Info: NEC F n -c h a n n e l m o s f ie l d e ffe c t p o w e r t r a n s is t o r ELECTRON DEVICE DESCRIPTION Ï 5 Ï The 2SK812 is N-Channel MOS Field E ffect Power Transistor designed fo r solenoid, m otor and lamp driver. FEATURES • b 412 S K . 8 1 2 PACKAGE D IM EN SIO N S

BT 816 transistor

Abstract: transistor bt 808 BT 815 transistor 2SD807 BT 812
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SC799

Abstract: transistor 2sa564 2sa564 transistor 2SA564 25X1 2SA539
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TRANSISTOR manual

Abstract: cl 100 hie 2SB128A 2SD1110A 762B ic 812a transistor 152 M
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: Philips Semiconductors Product specification b b s a ^ a i 00317 b4 1T3 • APX, NPN high frequency high voltage m BFQ265; BFQ265A transistor * N AMER PHILIPS/DISCRETE blE D " FEATURES PINNING PIN DESCRIPTION • High breakdown voltages • Low output capacitance

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

BT 815 transistor

Abstract: BT 816 transistor
Contextual Info: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code