TRANSISTOR S 813 Search Results

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TRANSISTOR S 813

Abstract: transistor 813 815 transistor OC71 H21A
Contextual Info: Section Eight Slotted O ptical Switches/Interrupters Transistor Output H 21A S e r ie s . 8-2 H 22A S e r i e s . 8-2 MOC7CI S eries .

Contextual Info: MOTOROLA Order this document by MUN5211DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 S E R IE S NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

MG11A

Contextual Info: UMG11N/FMG11A h 7 > V 7>£ /Transistors IIM A i 1 M U f f l U 1 T a T J l s S - ï - J l ' F h 7 > y z £/Dual Mini-Mold Transistor 1 Epitaxal Planar NPN Silicon Transistor •f > / \ ' —£ KÜ7 < /''/Inverter Driver • ^ fiiS /D im e n s io n s Unit : mm

transistor 808

Abstract: t3n8 transistor BUX 48 BUX44 bux c
Contextual Info: *BUX44 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS TO R S IL IC IU M N P N , M ESA T R IP L E D IF F U S E ^P re fe rre d device D is p o s itif recommandé High speed, high curre n t, high po w er transistor Transistor de puissance rapide, fo r t courant

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

sot-223 body marking D K Q F

Contextual Info: MOTOROLA Order this document by PZTA92T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor P N P PZTA92T1 S iliC O n COLLECTOR2,4 Motorola Preferred Device SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

Contextual Info: MOTOROLA Order this document by MUN5111DW1T1/D SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual B ia s Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic

un5313

Abstract: 5311DW
Contextual Info: MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 S ER IES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a

Motorola AN222A

Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Contextual Info: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

TRANSISTOR S 812

Abstract: tea2018 TEA2019
Contextual Info: S G S -T H O M S O N TE A 2019 ü ü 8 D Ê ll[L liË T M S R !IO Ê i CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A CURRENT LIMITATION TRANSFORMER DEMAGNETIZATION AND

CET451AN

Contextual Info: CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 7.2A , RDS ON =35mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. 8 G D S D S D SOT-223 S G G SOT-223 (J23Z)

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

tyco igbt module 15A

Abstract: tyco igbt module tyco igbt TYCO MODULE flowpim BOSSARD BN82428 tyco igbt module 3 phase
Contextual Info: Module with integrated shunts and NTC flowPIM 1 + S Features / Eigenschaften • • • • • 3 phase input rectifier BRC transistor + diode 3 phase inverter IGBT + FRAD shunts in 3 output lines NTC Tyco Electronics Rupert-Mayer-Str. 44, D-81359 München

d5383

Contextual Info: - 6 3 6 7 2 5 4 MOTOROLA S C X S T R S / R F MOTOROLA D T-33-35 69D 79944 Order this data sheet by MJ50BX120/D t3t7asl< °D7',‘1l" ) 7 T SEMICONDUCTOR TECHNICAL DATA C MJ50BX120 N P N Silico n Pow er Transistor M odule Energy M anagem ent Series DUAL

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

2SC2116

Abstract: TRANSISTOR S 813
Contextual Info: ^j3yNPNx^5>^T b7^-tm^yvx5> »ILICON NPN EPITAXIAL PLANAR TRANSISTOR 2 2116 sc TENTATIVE O VHF~UHFffi#*Ji<gffi O VHF~UHF Low Noise Amplifier Application • 'J' S W 11 S • Mini-Package 2.2mm0 —a- KJg 2.2mm0mold type MAXIMUM RATINGS T a = 25°C) CHARACTERISTIC SYMBOL RATING

2N6082

Abstract: transistor 0132 2N 2N6082 MOTOROLA RF VK200 rfc vk200 rfc with 6 turns MOTOROLA 2N motorola transistor 307 oo70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6082 T h e R F L in e 25 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N NPN S IL IC O N RF POWER T R A N S IS T O R S . . . designed for 12.5 V o lt V H F large-signal am plifier applications required in com m ercial and industrial equipm ent operating to

Transistor 638 MOTOROLA

Abstract: 2N6056 MOTOROLA DIODE 851 MOTOROLA eisc REF2667
Contextual Info: M OTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington S ilicon Power Transistor Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON