TRANSISTOR S33 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,

s3331

Contextual Info: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

NEC MARKING surface

Abstract: C11531E FP1F3P nec S33
Contextual Info: DATA SHEET COMPOUND TRANSISTOR FP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive

s34 diode

Abstract: KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22
Contextual Info: ?<WEREX KS221K15 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ilic ic D â r H t lQ tO n Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

s3331

Contextual Info: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily

s3331

Contextual Info: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors

BUZ73

Abstract: K 3911 transistor "" transistor T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE OL.E D • L,Li53cì31 0 0 1 4 4 5 0 FowerMUS transistor " 7 ■ BUZ73 T~ 37- j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

ms 7254 ver 1.1

Abstract: ms 7254 ver 3.0 T557
Contextual Info: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS

ARDV sot 23

Abstract: DS332P
Contextual Info: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Contextual Info: TOSHIBA 2SK2267 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2267 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 20.5MAX. É-

FZT2222A

Abstract: FZT2222
Contextual Info: FZT2222 FZT2222A SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR FEATURES * H fe SPECIFIED UP TO 500mA. * VERY LOW SATURATION VOLTAGE. * COMPLEMENTARY TYPE FZT2222 FZT2222A PARTMARKING DETAILS FZT2222 FZT2222A = = = = FZT2907 FZT2907A FZT2222 FZT2222A ABSOLUTE M A X IM U M RATINGS

transistor DK ql

Abstract: marking IAY S3300 AN569 MMSF3300 MMSF3300R2 MARKING S04 wwS marking
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMSF3300/D DATA Advance Information — MMSF33W WaveFETTM Power Surface Mount Products HDTMOS Single N-Channel Field Effect Transistor I WaveFETM devices are an advanced series of power MOSFETS which utilize Motorola’s

Contextual Info: T O SH IB A 2SK3017 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI 2SK3017 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

PCR 406 J transistor

Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
Contextual Info: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim

lm340

Abstract: LM340-12 TO-3 LM340-5 TO-3 transistor LM340 LM340-24 LM340-8 LM3408 n38v LM340 voltage regulator LM340-1B
Contextual Info: FEATURES ABSOLUTE MAXIMUM RATINGS . OUTPUT CURRENT IN EXCESS OF 1A • INTERNAL THERMAL OVERLOAD PRO­ TECTION • NO EXTERNAL COMPONENTS RE­ QUIRED • OUTPUT TRANSISTOR SAFE AREA PROTECTION • INTERNAL SHORT CIRCUIT CURRENT LIMIT . AVAILABLE IN PLASTIC TO-220 AND

NDS335

Abstract: NDS335N supersot-3
Contextual Info: July 1 9 9 6 N NDS335N N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features These N -Channel logic level enhancem ent m ode pow er field effect transistors are produced using Nationals proprietary, high cell density, DMOS

s3331

Contextual Info: Philips Components BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATURES PIN • Direct interface to C-M O S, TTL, etc. • High speed switching

Contextual Info: T O S H IB A 2SK2995 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2995 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

NDS336P

Abstract: p-Channel Logic Level Enhancement Mode
Contextual Info: June 1997 FAIRCHILD ìm ic d n d u c to r - NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral Description SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

IR s27

Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
Contextual Info: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics  Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages.  Adjustable programming - suitable for different remote code formats.

AN569

Abstract: MMSF3350 MMSF3350R2 SMD310
Contextual Info: MMSF3350 WaveFET HDTMOS Single N-Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area.

SOT-23 NDS332P

Abstract: NDS332P BOC sot23
Contextual Info: June 1997 FAIRCHILD ìm ic d n d u c t o r - NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high