TRANSISTOR S46 Search Results
TRANSISTOR S46 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TRANSISTOR S46 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 | |
transistor s46
Abstract: marking S46 sot89 PBSS4350X PBSS5350X
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M3D109 PBSS5350X SC-62) SCA76 R75/03/pp12 transistor s46 marking S46 sot89 PBSS4350X PBSS5350X | |
transistor s46
Abstract: marking code s46 PBSS4350x PBSS5350X
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M3D109 PBSS5350X SC-62) SCA75 R75/02/pp11 transistor s46 marking code s46 PBSS4350x PBSS5350X | |
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
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transistor s46
Abstract: marking S46 sot89 MLE186 PBSS5350 MLE168 MLE170 free transistor equivalent book
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M3D109 PBSS5350X SC-62) SCA75 613514/01/pp12 transistor s46 marking S46 sot89 MLE186 PBSS5350 MLE168 MLE170 free transistor equivalent book | |
Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Nov 21 2004 Nov 04 NXP Semiconductors Product data sheet 50 V, 3 A PNP low VCEsat (BISS) transistor PBSS5350X |
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M3D109 PBSS5350X SC-62) R75/03/pp12 | |
transistor s46
Abstract: SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46
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M3D109 PBSS5350X SC-62) R75/03/pp12 transistor s46 SC6210 marking S46 sot89 PBSS4350x PBSS5350X Sc-6210 marking code s46 | |
Contextual Info: KS621220A7 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S Í O Q I b D d r lin Q t O P Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power |
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KS621220A7 Amperes/1200 | |
transistor s46
Abstract: KS621220A7 s45 diode DIODE S45 powerex ks62
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KS621220A7 Amperes/1200 transistor s46 KS621220A7 s45 diode DIODE S45 powerex ks62 | |
BSS98
Abstract: ss98 transistor siemens ss98
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BSS98 BSS98 Q67000-S464 Q62702-S053 Q62702-S517 Q62702-S635 ss98 transistor siemens ss98 | |
BSS95
Abstract: BSS 95 siemens transistor bss S 437 Diode
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O-202 Q62702-S461 BSS95 BSS 95 siemens transistor bss S 437 Diode | |
BSS97
Abstract: bss 97 transistor BSS 97 Q62702-S463
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Q62702-S463 BSS97 bss 97 transistor BSS 97 Q62702-S463 | |
BSS97
Abstract: BSS 97 bss 97 transistor LC-R121R3P GPT05576 transistor bss
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O-202' GPT05576 62702-S463 SIK02261 a23SbOS BSS97 BSS 97 bss 97 transistor LC-R121R3P GPT05576 transistor bss | |
BSS95
Abstract: transistor s461 Transistor bss BSS 95 siemens
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O-202 62702-S461 flS35b05 0054E74 BSS95 transistor s461 Transistor bss BSS 95 siemens | |
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Contextual Info: Jeiizu ^£.mi-L.onaiLctoi , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1073 Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEo=-160V(Min) |
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2SA1073 -160V 2SC2523 -160V; 10MHz | |
Contextual Info: J.S.11.S.Ut/ ^zmi-donauctoi L/^ioaucti, One. CX TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY52A Silicon NPN Power Transistor DESCRIPTION • High Current Capability • Fast Switching Speed |
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BUY52A | |
IR s27
Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
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HT48RA0-5 HT622x) HT48RA0-5 20SSOP) IR s27 infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor | |
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
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1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 | |
SMD10P06Contextual Info: SMD10P06 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) –60 0.28 @ VGS = 10 V "10 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD10P06 D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) |
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SMD10P06 O-252 17tings S-46848--Rev. 26-Feb-96 SMD10P06 | |
SMD10P06Contextual Info: SMD10P06 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) –60 0.28 @ VGS = 10 V "10 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD10P06 D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) |
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SMD10P06 O-252 17tings S-46848--Rev. 26-Feb-96 SMD10P06 | |
SMD15N06Contextual Info: SMD15N06 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 60 0.10 @ VGS = 10 V 15 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD15N06 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) |
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SMD15N06 O-252 S-46849--Rev. 26-Feb-96 SMD15N06 | |
SMD15N06Contextual Info: SMD15N06 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) IDa (A) 60 0.10 @ VGS = 10 V 15 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SMD15N06 S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) |
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SMD15N06 O-252 S-46849--Rev. 26-Feb-96 SMD15N06 | |
Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDY55 Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • DC Current Gain: hFE=20-70@lc = 4A • Collector-Emitter Saturation Voltage:VCE(sa,)=1.1 V(Max)@l c = 4A |
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BDY55 10MHz | |
Contextual Info: Temic SMD15N06 Semiconductors N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) 60 rDS(on) (Q ) 0.10 @ VGS= 10 V IDa (A) 15 D Q TO-252 Drain Connected to Tab G D S Top View Order Number: SMD15N06 6 s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) |
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SMD15N06 O-252 S-46849â 26-Feb-96 |