FLS35B05 Search Results

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

82C54-2-P

Contextual Info: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes

Contextual Info: 47E D • SIEM EN S A235bGS 0034130 SIEMENS AKTIENGESELLSCHAF Infrared Signal Receiver 4 ■ SIE6 TDA 4065 Preliminary Data Bipolar 1C Features • • • • • • High input sensitivity Improved com pensation for extraneous light in range of normal indoor illuminance

BD 61 9 40

Contextual Info: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - r o SIEMENS AKTIENGESELLSCHAF l î l BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase

Contextual Info: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package

BFQ60

Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

Q907

Abstract: Q67100-Q915 Q554b
Contextual Info: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: flSBSbOS GDIETME SIEMENS 2b? • PROFET BTS 430 K2 Smart Highside Power Switch Product Summary Features • Clamp of negative voltage at output 50 Vbb- Vout Avalanche Clamp • Short-circuit protection Vbb operation 4 .5 . . 32 • Current limitation -32

Contextual Info: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3906

s43a

Contextual Info: SIEMENS 8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 328020G D-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

siemens FLH

Abstract: 514400 514400J-10 514400J-80 514400J
Contextual Info: • ß23SbOS OOSOlbü 4 Pi SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF 47E D 1M x 4-Bit Dynamic RAM HYB 5144Q0*80/-10 Preliminary • • • • • • • • • • • 1 048 576 words by 4-bit organization Fast"access and cycle time 80 ns access time 160 ns cycle time HYB 514400-80

MC801

Abstract: SAB-502-2R RC2H C5022 sab-502 TCON application 80C52 SAB-C502 SAF-C502
Contextual Info: SIE M E N S SAB-C502 8-Bit CMOS Microcontroller • Fully compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing

BFQ 58

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

CFW450

Abstract: S695 diode V4748 TUA4300P S695 Rectifier N4748 S695 csb456 AM2 Siemens metal detector diagram PI
Contextual Info: FS: 1 1 /9 2 P a g e A.1 S IE M E N S A G p r e lim in a r y D A T A -S H E E T TUA 4300 Tab le of C o n te n ts ONE CHIP CAR RADIO Differences to th e last edition Page O.b Table o f Contents Page A. 1 Functional Description, A pplication Page B.2 . B.3

cc 3025 diode

Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
Contextual Info: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated

buz 90 af

Contextual Info: flÖD D • ö 2 3 SbGS 88D OOlSOflb 4 « S I E G 15086 D 7 ~ ' 3 <? - / 3 BUZ 381 SIEMENS AKTIENGESELLSCHAF N-Channel Main ratings VBt - 1000 V Draln-source voltage /„ -4 ,9 A Continuous drain current Draln-source on-resistance DS on ■ 2,6 £2 Description

T60403-L4021

Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
Contextual Info: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input

Contextual Info: SIEMENS 8M X 36-Bit EDO-DRAM Module HYM 368025S/GS-50/-60 Advanced Inform ation • SIMM m odule with 8 388 608 words by 36-bit organization for PC main m em ory applications • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version

Contextual Info: BSS89 In fin e o n technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level * W = ° - 8- 2 0 V Type Vbs t flDS on) Package Marking BSS89 240 V 0.3 A en TO-92 SS89 Typ* BSS89 BSS89 BSS89 Ordering Code Q62702-S519 Q62702-S619

Contextual Info: SIEMENS BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: Electrostatic Discharge sensitive devicé, observe handling precautions! Type Marking Q62702-A1103 1=A Package o Pin Configuration

Contextual Info: SIEMENS BB 914 S ilico n V ariab le C a p a c ita n c e D iode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve

transistor BD 680

Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243
Contextual Info: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors

BDY13

Abstract: Q62702-D378 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12
Contextual Info: 2SC D • ÔSBSbQS QQQHMBB T H S I E G NPN Silicon Planar Transistors SIEMENS AKTIENÛESELLSCHAF BDW 25 BDY 12 ° - BDY 13 433 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.