TRANSISTOR S59 Search Results

Contextual Info: KS621230A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S IH Q IG D d f l in Q t O n Transistor Module 300 Amperes/1200 Volts O U T L IN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

transistor S59

Abstract: KS621230A7 transistor b 1417 S-60 transistor S57 powerex ks62
Contextual Info: m U E R E X KS621230A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in Q lB D S f H n g t O f l Transistor Module 300 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium

Contextual Info: 62 7  BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium

FJY3009R

Abstract: FJY4009R
Contextual Info: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Eqivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *

transistor S59

Abstract: FJY3009R FJY4009R
Contextual Info: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Equivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *

transistor S59

Abstract: Transistor Equivalent list FJY3009R FJY4009R
Contextual Info: FJY4009R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R=4.7KΩ • Complement to FJY3009R Equivalent Circuit C C S59 E B E B SOT - 523F Absolute Maximum Ratings *

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 0G037G5 b ■ T-91-01 PROCESS JLA Process JLA NPN Small-Signal Transistor P ro c e ss J L A is a double-diffused epitaxial planar N P N silicon device. It is d esign ed for u se in generalp urp ose amplifier and high-current switching circuits.

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

TRANSISTOR C 557 B

Abstract: transistor bc 557 c le B 557 PNP TRANSISTOR 8C556 transistor B 560 nf21 BC558 pnp transistor BC 558 transistor BC546 pnp bc559 transistor
Contextual Info: PNP EPITAXIAL SILICON TRANSISTO R BC556/557/558/S59/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: 8C556, Veto* -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 TO-92 ABSO LUTE MAXIMUM RATINGS T a = 2 5 1 C Sym bol Characteristic Collector-Base Capacitance

S594TX

Abstract: S594TXR S594TXRW TRANSISTOR SMD MARKING g1
Contextual Info: S594TX/S594TXR/S594TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

S594TX

Abstract: S594TXR S594TXRW
Contextual Info: S594TX/S594TXR/S594TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: S595TX/S595TXR/S595TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: S593TX/S593TXR/S593TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

S593TX

Abstract: S593TXR S593TXRW X3R marking
Contextual Info: S593TX/S593TXR/S593TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

S595TX

Abstract: S595TXR S595TXRW
Contextual Info: S595TX/S595TXR/S595TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

Contextual Info: S594TX/S594TXR/S594TXRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

S593TX

Abstract: S593TXR S593TXRW
Contextual Info: S593TX/S593TXR/S593TXRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

w5l transistor

Abstract: PLL 566 SMD TRANSISTOR MARKING DE S592TRW S592T S592TR SMD TRANSISTOR MARKING 94 transistor smd marking 94
Contextual Info: S592T/S592TR/S592TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and

gs gl 317

Abstract: telefunken ha 880 gl 1150 S595TRW 945 mosmic
Contextual Info: Tem ic S595TRW S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage M OSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF- and VHFtuner with 5 V supply voltage.

S594TX

Abstract: S594TXR S594TXRW mg sot-143 smd transistor marking sep
Contextual Info: S594TX/S594TXR/S594TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, medium forward transadmittance

S595TX

Abstract: S595TXR S595TXRW smd transistor marking sep SG1C
Contextual Info: S595TX/S595TXR/S595TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance

Contextual Info: S595TX/S595TXR/S595TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, high forward transadmittance

mg sot-143

Abstract: SG1C S593TX S593TXR S593TXRW SMD transistor 26 sot 23 sot343r
Contextual Info: S593TX/S593TXR/S593TXRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features 4 2 1 • Integrated gate protection diodes • Low noise figure • High gain, very high forward transadmittance