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    TRANSISTOR S72 Search Results

    TRANSISTOR S72 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S72 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking s72

    Abstract: transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23
    Text: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 200 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-


    Original     		PDF 2N7002 OT-23 transistor marking s72 transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23

    transistor SMD s72

    Abstract: S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 PIN COFIGURATION G= GATE S= SOURCE SOT-23 Formed SMD Package D= DRAIN Marking 2N7002=S72 Designed for High Speed Pulse Amplifier and Drive Application


    Original     		PDF 2N7002 OT-23 2N7002 C-120 2N7002Rev021104E transistor SMD s72 S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23

    2n603l

    Abstract: marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode
    Text: BSP603S2L Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 33 mΩ ID 5.2 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP603S2L SOT-223 Q67060-S7213 2N603L VPS05163


    Original     		PDF BSP603S2L OT-223 Q67060-S7213 VPS05163 2N603L 2n603l marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode

    2N615L

    Abstract: BSP615S2L VPS05163 55B5
    Text: BSP615S2L Preliminary data OptiMOS =Small-Signal-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 90 mΩ ID 2.8 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP615S2L SOT-223 Q67060-S7211 2N615L


    Original     		PDF BSP615S2L OT-223 Q67060-S7211 VPS05163 2N615L 2N615L BSP615S2L VPS05163 55B5

    2N603L

    Abstract: Q67060-S7213 BSP603S2L
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 33 mΩ ID 5.2 A SOT 223 Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L

    2N615L

    Abstract: Q67060-S7211 BSP615S2L
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2003-10-2y 2N615L Q67060-S7211 BSP615S2L

    2N615L

    Abstract: 55B5 BSP615S2L 2N615
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP615S2L Q67060-S7211 2N615L 2N615L 55B5 BSP615S2L 2N615

    2N603L

    Abstract: Q67060-S7213 BSP603S2L d52a
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		PDF BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L d52a

    2N603L

    Abstract: BSP603S2L
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 R DS on 33 m ID 5.2 A PG-SOT 223 • Pb-free lead plating; RoHS compliant Type BSP603S2L Package PG-SOT 223 V Ordering Code Q67060-S7213


    Original     		PDF BSP603S2L BSP603S2L Q67060-S7213 2N603L 2N603L

    Untitled

    Abstract: No abstract text available
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V RDS on 90 m ID 2.8 A PG-SOT 223 • Pb-free lead plating; RoHS compliant Type Package Ordering Code Marking BSP615S2L PG-SOT 223 Q67060-S7211


    Original     		PDF BSP615S2L BSP615S2L Q67060-S7211 2N615L

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    transistor s72

    Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
    Text: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K40A41 Amperes/1000 transistor s72 S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: KS621K40A41 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


    OCR Scan     		PDF KS621K40A41 15697-1BOO Amperes/1000

    transistor s72

    Abstract: S72 transistor BUK436-200A BUK436-200B buk436
    Text: N AUER P H I L I P S / D I S C R E T E bTE ]> • bbS3T31 DQ304b5 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bbS3T31 DQ304b5 BUK436-200A/B BUK436 -200A -200B transistor s72 S72 transistor BUK436-200A BUK436-200B

    Untitled

    Abstract: No abstract text available
    Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter


    OCR Scan     		PDF BD131 OT-32 BD132. DD34243 BD132 003424b

    d1694

    Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
    Text: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base


    OCR Scan     		PDF BD131 OT-32 BD132. O-126 OT-32) 345l4b d1694 transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv

    BLV80-28

    Abstract: TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN
    Text: bSE T> 7 11 002 b GübETiö 734 M P H I N B L V 8 0 /2 8 PHILIPS INTERNA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused em itter ballasting resistors fo r an optim um temperature profile;


    OCR Scan     		PDF 711002b BLV80/28 OT-121 00b3D0L. BLV80-28 TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN

    bfq34 application note

    Abstract: ON4497 BFQ34 sf 122 transistor
    Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a


    OCR Scan     		PDF DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor

    7408 philips

    Abstract: MCD122 BFG33 transistor c 6093 L7E transistor IC 7408 ti HCC80 transistor 406 specification Hcc 036-0 lc 7408
    Text: •I bbSBTBl 0054flCH Tb5 ■ APX P hilips Sem Product specification NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES b7E ]> PINNING PIN • High power gain


    OCR Scan     		PDF 0054flCH BFG33; BFG33/X BFG33 OT143 7408 philips MCD122 transistor c 6093 L7E transistor IC 7408 ti HCC80 transistor 406 specification Hcc 036-0 lc 7408

    2n7002

    Abstract: S72 2n7002 transistor s72 2N7002 MARKING s72 2N7002 MARKING 2N7002C s72 sot 23
    Text: 2N7002 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown Pin configuration 1 = Drain, 2 = Gate, 3 = Source.


    OCR Scan     		PDF 2N7002 OT-23 2n7002 S72 2n7002 transistor s72 2N7002 MARKING s72 2N7002 MARKING 2N7002C s72 sot 23

    transistor marking s72

    Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
    Text: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002 OT-23, MIL-STD-202, OT-23 DS11303 2N7002 transistor marking s72 transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702

    k72 transistor sot 23

    Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
    Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002-01 OT-23, MIL-STD-202, OT-23 300ns, DS30026 2N7002-01 k72 transistor sot 23 transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159