TRANSISTOR S99 Search Results

S9925

Contextual Info: N J u ly 199 6 N D S9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS9956A

Abstract: so8 LD3 Transistor dj rw
Contextual Info: February 1996 N NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density

NDS9953A

Contextual Info: February 1996 N NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density

NDS9948

Contextual Info: February 1996 N NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has

transistor 1gs

Abstract: A7840
Contextual Info: May 1996 N NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

NDS9959

Abstract: diode S3 78A
Contextual Info: February 1996 N NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

MOSFET IRF 570

Contextual Info: February 1996 FAIRCHILD IM IC D N D U C T D R tm NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

MOTS2

Abstract: mosfet motor dc 48v NDS9957
Contextual Info: February 1996 N NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

NDS9958

Contextual Info: February 1996 N NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process

Transistor Mosfet N-Ch 30V

Abstract: n channel mosfet NDS9952A
Contextual Info: FAIRCHILD February 1996 M IC O N D U C T O R ! NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

9958

Abstract: la7840
Contextual Info: FAIRCHILD February 1996 SEM ICONDUCTO R NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N- and P -C hannel en hancem ent m ode pow er field effe ct transistors a re produce d using Fairchild's proprietary,

Contextual Info: N July 1996 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features These N-Channel enhancem ent m ode p ow er field effect transistors are produced using proprietary, high cell density, DMOS National's technology. • 4.2 A, 20 V. RDS 0N = 0.06 D @ VGS = 4.5 V

la7840

Contextual Info: F A I R C H I L February 1996 D :MICÜNDUCTÜR- m NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel en hance m en t m ode pow er field effect transistors are produced using Fairchild's proprietary, high cell

2DI75D-050A

Abstract: DIODE B93 B-93 H125 M208 gip transistor b93 diode YSTT
Contextual Info: 2DI75D-050A 75a /<7- -)V POWER TRANSISTOR MODULE i F e a tu re s • 7 'J — • h F E ^ ftt' •m m X — KF*3W Including Free Wheeling Diode High DC Current Gain Insulated Type If f liÉ : A p p lic a t io n s • High Power Switching • AC i AC Motor Controls

NDS9955

Contextual Info: February 1996 N NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel enhance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is

NDS9942

Abstract: m6rj S9942
Contextual Info: February 1996 N NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N- and P -C hannel en hancem ent m ode pow er field effect transistors are produce d using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high density

785-500

Abstract: it 785-500 NDS9947
Contextual Info: F e b ru a ry 1 9 9 6 N NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e P -C hannel en hance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is

S9943

Abstract: NDS9943
Contextual Info: February 1996 N NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N - and P -C h a n n e l e n h a n c e m en t m o d e po w er field e ffec t transistors a re prod uced using • N -C h a n n e l 3 .0 A , 2 0 V , R r

2SC495

Abstract: SC496 2SA496 2SC495 transistor 2SC496 2SA49 TO2SA5 2SC495-O 2SC496-R 2SC49
Contextual Info: 2SC 95 ' k 2/U D >N PN X ti^2/?JI/}B h5>^^ PC TÄ Ä ^ S ILIC O N 2SC 96 o + * # * * « o M e d iu m P o w e r A m p i i f i e r A p p i i c a t ions tefn«E BgiT'y : - y =l y ^ x - o . 5 V0E(sat ) w NPN 0 .2 5 V EPITAXIAL TRANSISTOR (PCT PROCESS) (T y p .)

AAW2

Abstract: CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A
Contextual Info: N/l IC O N D U C TO R tm NDS9933A Dual P-Channel Enhancem ent M ode Field Effect Transistor Features General Description T h is P -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e f­ • -2 .8 A , - 2 0 V. R,D S o n fe c t tra n s is to r is p ro d u c e d u s in g F a irc h ild ’s p ro p ri­

Contextual Info: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high near IR sensitivity The S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device

Contextual Info: IMAGE SENSOR CCD area image sensor S9979 Front-illuminated FFT-CCDs S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.

Contextual Info: IMAGE SENSOR CCD area image sensor S9979 TDI operation / large active area CCD S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.

Contextual Info: IMAGE SENSOR CCD area image sensor S9979 TDI operation / large active area CCD S9979 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.