TRANSISTOR SOT23, VBE 8V Search Results

HFA3135IHZ96

Contextual Info: HFA3134, HFA3135 Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors FN4445.2 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s

HFA3134IHZ96

Abstract: HFA3135IHZ96 HFA3134IH96 HFA3135IH96 EIAJ-SC74 sot23/HFA3134IHZ96 HFA3134 HFA3135
Contextual Info: HFA3134, HFA3135 Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN

Contextual Info: HFA3134, HFA3135 Data Sheet July 21, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s complementary bipolar UHF-1X process. The NPN

NPN pnp MATCHED PAIRS array

Abstract: LA 4451
Contextual Info: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors [ /Title HFA3 134, HFA31 35 /Subject (Ultra High Frequency Matche d Pair Transistors) /Autho r () /Keywords (Intersil Corporation, semiconductor, two, transistor array,

H05 SOT23 5

Abstract: A1557 TRANSISTOR SOT23, Vbe 8V ES SC74 P6.064 Package transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96
Contextual Info: HFA3134, HFA3135 TM Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s

TRANSISTOR SOT23, Vbe 8V

Abstract: TRANSISTOR 1P SOT23 NPN pnp MATCHED PAIRS PNP 5GHz transistor pnp 3015 HFA3134 HFA3134IH96 HFA3135 HFA3135IH96 H05 SOT23 5
Contextual Info: HFA3134, HFA3135 Data Sheet February 1998 Ultra High Frequency Matched Pair Transistors File Number 4445 Features • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation’s

.FT SOT23-6

Abstract: SOT23-6, complementary transistors
Contextual Info: S E M I C O N D U C T O R HFA3134, HFA3135 Ultra High Frequency Matched Pair Transistors February 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Harris Semiconductor’s

BFR106

Abstract: Low Noise R.F AN077 BCW66
Contextual Info: BFR106 NPN Silicon RF Transistor • High linearity low noise RF transistor • 22dBm OP1dB and 31dBm OIP3 2 3 @ 900MHz,8V,70mA 1 • For UHF/VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage

TRANSISTOR SOT23, Vbe 8V

Abstract: FMMT614 DSA003700
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

VP4-0140

Abstract: T17 DUAL TRANSISTOR lead gel battery KSH30 MAX1864 MAX1865 MAX1964 MAX1965 MAX8513 MAX8514
Contextual Info: Maxim > App Notes > AUTOMOTIVE Keywords: Current limit, foldback, fold back, linear regulator, lead-acid battery Nov 16, 2005 APPLICATION NOTE 3654 Current Limiting for the MAX1864 Auxiliary Regulator Abstract: The MAX1864 is a low-cost, multiple-output converter consisting of a switching buck circuit and two

ZETEX GATE DRIVER

Abstract: ZXGD3004E6 ZXGD3003E6 ZXGD3003 PNP POWER TRANSISTOR SOT23 MOSFET sot23-6 npn 2222 transistor selection criteria of bipolar transistor ZXGD3002 ZXGD3002E6
Contextual Info: DN80 Bipolar transistors for MOSFET gate driving applications Peter Blair, Product Development Manager Over the last few years MOSFETs have become the device of choice in power switching applications. Whilst on-resistances have significantly reduced, they often require a driver stage

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

smd transistor 5k

Contextual Info: Transistors IC Transistor SMD Type Product specification FMMT614 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE up to 5k at IC= 500mA 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast switching +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

Contextual Info: ¡SAMSUNG SEM IC ON DU CTOR MJE200 INC IME 0 | 7^4142 □ 0 Q 7 b tit NPN EPITAXIAL SILICON TRANSISTOR CÒ LLECTOR-EM ITTER SU STAINING VOLTAGE LOW CO LLECTOR-EM ITTER SATURATION VOLTAGE HIGH CU RREN T GAIN-BANDW IDTH PRODUCT-MIN fT=65MHz @ lc=100m A Complementary to MJE210

BFR 182 transistor

Abstract: Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315
Contextual Info: BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR +25°C FMMT614 ISSUE 3 – APRIL 1996 FEATURES * hFE up to 5k at Ic= 500mA * Fast switching * Low VCE sat at High Ic I+/I*=1000 I+/I*=1000 I+/I*=2000 I+/I*=5000 E C PARTMARKING DETAILS – 614 -55°C

smd transistor 5k

Abstract: SMD BR 17 smd transistor 614 FMMT614 smd marking 5K
Contextual Info: Transistors SMD Type Power Darlington Transistor FMMT614 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE up to 5k at IC= 500mA 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast switching +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1

Transistor BFR 14

Abstract: Q62702-F1316 SIEMENS marking
Contextual Info: BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

Q62702-F1296

Contextual Info: BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications

BFR106

Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
Contextual Info: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!

MJE 280 power transistor

Abstract: Q62702-F1298 bfr280
Contextual Info: BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!