TRANSISTOR T 523 Search Results

MMBT2222

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: t Philips Components Data sheet status Preliminary specification date of issue March 1991 - 3 9 - J o BUK471-100A/B PowerMOS transistor Replaces BUK441-100A/B SbE » PHILIPS I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: SAMSU NG S E M I C O ND U C T O R INC MMBT2222 14E D | T'Ibm ME 00072S3 1 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS T,=25°C C haracteristic CoBector-Base Voltage Codec tor-Emltter Voltage Emitter-Base Voltage

transistor marking 5c1

Abstract: transistor CODE 5C1 CMUT5551E
Contextual Info: CMUT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications

Contextual Info: CMUT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications

transistor T 523

Contextual Info: CMUT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications

transistor marking 5c1

Contextual Info: CMUT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5551E is an NPN Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications

FA1A4M

Contextual Info: SILICON TRANSISTOR FA 1A 4M M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • Resistors B u ilt-in TYPE in m illim e te rs R O—V W t = 1 0 k i7 R2 = l 0 k t t • C o m plem entary to FN 1A 4M A B S O LU T E M A X IM U M R A T IN G S

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BUK556-60H

Abstract: T0220AB
Contextual Info: bSE D PHI LI P S I N T E R N A T I O N A L B 711002b DQbMEbl 050 « P H I N Prelim inary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUZ311

Abstract: P70D
Contextual Info: N AMER PHILIPS/DISCRETE DbE D m PowerMOS transistor □bS3T31 OGlMaBb E • BUZ311 T* ~ 3 I I^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

AN406/0591

Abstract: TEA2019 TEA2018A
Contextual Info: SGS-THOMSON J T E A 2019 CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCH­ ING TRANSISTOR ' ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION AND POWER TRANSISTOR SATURATION SENS­

BLY94

Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
Contextual Info: b'ìE » N AMER PHILIPS/DISCRETE • bbS3131 ÜÜSTTSfl 22T IAPX B LY94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

BF 182 transistor

Abstract: TRANSISTOR Bf 522 BF182 bf 182 CI 182 Y11E transistor A11A
Contextual Info: B F 182 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN SILIC IU M , PLA N A R E P IT A X IA L The NPN planar epitaxial transistor BF 182 is intended for use in V H F converter stages of television receivers and generally for'all U H FV H F uses.

BUK556-60H

Abstract: T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E b'îE » t.bS3T31 OOBDflSS 447 M A P X Preliminary Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

Contextual Info: T O SH IB A 2SC5233 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC 5233 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (Typ.) @ I q = 10mA / Iß = 0.5mA

BFR94

Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency

Contextual Info: Transistors General Purpose Transistor Isolated Dual Transistors IMX17 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Two 2 S D 1 4 8 4 K chips in an SM T package. 2) Mounting possible with SM T3 au­ tomatic mounting machine. 3) Transistor elements are indepen­