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    TRANSISTOR T F5 J Search Results

    TRANSISTOR T F5 J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T F5 J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Timer Interval Indicator K3HB-P CSM_K3HB-P_DS_E_13_1 Digital Time Interval Meter for Measuring Passing Speed, Time, or Cycle between Two Points. • Visual confirmation of judgement results through display colors that switch between red and green. *1 • Measures Wide Range of Pulse Interval Times


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    K3HB-RNB MANUAL

    Abstract: K3HB-RNB User Manual k3hb-cnb K3HB-RNB lcd 7 segment rpm meter circuit K3HB-R K35 equivalent hr31 humidity sensor Wire to Board Connector AWG14
    Text: Digital Indicators K3HB Series Pulse Input Series The K3HB Series has been made complete with the addition of Digital Signal Input Models. • Easy recognition of judgment results using two-color display that can be switched between red and green. • Equipped with a position meter for monitoring


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    PDF N135-E1-01 75-344-7080/Fax: 0804-1M K3HB-RNB MANUAL K3HB-RNB User Manual k3hb-cnb K3HB-RNB lcd 7 segment rpm meter circuit K3HB-R K35 equivalent hr31 humidity sensor Wire to Board Connector AWG14

    K3HB-RNB MANUAL

    Abstract: k3hb-cnb HDR-E50LPA5 HDR-E50MAG1 K3HB-RNB n136 time interval meter N135-E1-02 K3HB-RNB User Manual DDK Connectors terminal 18
    Text: Digital Indicators K3HB Series Pulse Input Series The K3HB Series has been made complete with the addition of Digital Signal Input Models. • Easy recognition of judgment results using two-color display that can be switched between red and green. • Equipped with a position meter for monitoring


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    PDF N135-E1-02 K3HB-RNB MANUAL k3hb-cnb HDR-E50LPA5 HDR-E50MAG1 K3HB-RNB n136 time interval meter N135-E1-02 K3HB-RNB User Manual DDK Connectors terminal 18

    d1758

    Abstract: Transistor d1758 transistor F5 2SD1758F5 2SD1758 E 32 TRANSISTOR d1758 s d1758 transistor transistors d1758
    Text: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package package marking: D1758*t), where ★ is hFE code and □ is lot number general purpose transistor with ratings as follows: — 2SD1758F5 (CPT F5) o 5.1 1' • X


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    PDF 2SD1758F5 SC-63) D1758 2SD1758F5 2SD1758 Transistor d1758 transistor F5 E 32 TRANSISTOR d1758 s d1758 transistor transistors d1758

    2SA 016

    Abstract: A1834 2SA series transistor transistor B 560
    Text: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834^Q, where ★ is hFE code and □ is lot number low collector saturation voltage V c E ( s a t) = - 0 . 1 6 V for l c = - 4 A,


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    PDF 2SA1834F5 SC-63) A1834 2SC5001 2SA1834F5 2SA 016 2SA series transistor transistor B 560

    A1727 transistor

    Abstract: A1727 transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63
    Text: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: A1727-AQ, where ★ is hFE code and □ is lot number 6.5 ± 0.2 high breakdown voltage, r r • 2SA1727F5 (CPT F5) C1 51 -0.1 I 1 V q e o = _4 0 0 V


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    PDF 2SA1727F5 SC-63) A1727 A/-10 2SA1727F5 C1000 A1727 transistor transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63

    transistor C5103

    Abstract: C5103 C5103 Transistor transistor 2SC5103 C5103 Q e 2SC5103F5
    Text: 2SC5103F5 Transistor, NPN Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: C5103^0, where ★ is hFE code and □ is lot number • high-speed switching, typically tf = 0.1 jis for lc = 3 A • low collector saturation voltage,


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    PDF 2SC5103F5 SC-63) C5103 curre25 2SC5103F5 transistor C5103 C5103 Transistor transistor 2SC5103 C5103 Q e

    TRANSISTOR 3F z

    Abstract: pnp transistor 400V 500mA 2SA1862 2SA1862F5
    Text: hÿ 2 > V 7k£ SA /Transistors 1 8 6 2 2SA1862F5 F5 PNP y y □ > by> Triple Diffused Planar PNP Silicon Transistor High Voltage Switching For Telephone Switching Power Suppliers • ^ ‘^•jiS/Dimensions (Unit: mm) 1) B VceO =~400V 2) □ VCE (s e t)= -0 .3 V (Typ.)


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    PDF 2SA1862F5 -500mA/-100mA) -400V SC-63 TRANSISTOR 3F z pnp transistor 400V 500mA 2SA1862 2SA1862F5

    l78s24ct

    Abstract: L78S L78S12CT
    Text: rZ Z Ä 7 # S G S -T H O M S O N L78S00 S E R IE S 2A POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 2A' ■ OUTPUT VOLTAGES O F5 ; 7.5 ; 9 ; 10 ; 12 ; 15 ; 1 8 ; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION


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    PDF L78S00 L78S00 O-220 essenL78S00 l78s24ct L78S L78S12CT

    transistor b1184

    Abstract: b1184 transistor b1184 b1184 R 2SB1184F5
    Text: Transistor, PNP 2 S B 1 1 8 4 F 5 Features • available in CPT F5 SC-63 package • package marking: B1184*t), where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = -0.5 V for Iq/Ib = —2 A/—0.2 A • complementary pair with 2SD1760F5


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    PDF 2SB1184F5 SC-63) B1184 2SD1760F5 2SB1184F5 transistor b1184 b1184 transistor b1184 R

    TRANSISTOR b1181

    Abstract: b1181 2SB1181F5
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,


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    PDF 2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 TRANSISTOR b1181 b1181

    2SC547

    Abstract: 9At TRANSISTOR U5SB
    Text: SEMICONDUCTOR ïxfi TOSHIBA TRANSISTOR 2 S0 54 7 SIL IC O N NPN EPITAXIAL PLANAR TECHNICAL DATA '& o vhf ntimmm O &f5 t o k O VHP Power A m p l i f i e r s , fi I * INDUSTRIAL APPLICATIO NS U n it i and ffl P. P 2UQ Frequency M u l t i p l i e r H i g h Power D r i v e r s A p p l i c a t i o n s


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    PDF 250mA i00mA 100MHa 175MHz 2S0541 2S0547 2SC547 9At TRANSISTOR U5SB

    Untitled

    Abstract: No abstract text available
    Text: F X series Swìtohtng Power Transistor ". •. V ' . \ \f5 ilS l TS e I ì •. .• Outline Dimensions 2 S C 4 0 5 8 l ü T10W45FX 5 .; A b so lu te Maximum R ating s ^ B e Item S to ra g e T e m p e ra tu re -» Sym bol a u 9 9 '* - X y *G E C o lle c to r to E m itte r V o lta ge


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    PDF T10W45FX)

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICO N TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic j | | | Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


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    PDF KST1009F1/F2/F3/F4/F5 100MHz KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 KST1009F1 KST1009F2

    2SB1182F5

    Abstract: 2SD1758F5
    Text: h7 9 £ /Transistors C n 2SD1758F5 | ' > U • 1 E p ita x ia l P la n a r N P N S ilic o n U S M ^ J iS fB ffl/L o w F re q . 3 > h 7 > y ^ T r a n s is to r P o w e r A m p . • ^ H ß '+ äslII/D im en sio n s U n it: mm 1 )V ceo =32V, Ic m ax =2A,


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    PDF 2SD1758F5 2SB1182F5 2SB1182F5. SC-63 Parameter100 2SB1182F5

    S22G

    Abstract: MMBF5484LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE M M B F5484LT1 M otorola Preferred D evice MAXIMUM RATINGS Rating % Symbol Value Unit VdG 25 Vdc VGS r 25 Vdc 'G(f) 10 mAdc 200 2.8 mW mW/°C 2 D rain-G ate Voltage Reverse G ate-Source Voltage


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    PDF F5484LT1 S22G MMBF5484LT1

    D1758

    Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
    Text: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)


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    PDF 2SD1758F5 SC-63) D1758 2SD1758F5 temperature00 2SD1758 Transistor d1758 d1758 transistor

    TL-2000

    Abstract: No abstract text available
    Text: N "7 > y ' 7 $ / T ransistors 2 S D 1 7 6 2SD1760F5 F NPN y U 3 > h - 7 > v * 2 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. 5 • $WK>í'sÉH/D¡men8¡ons Unit : mm • 1) V c e (sat) J i3 0.5+ 0.I V C E ( s a t) = 0 .5 V ( T y p .) (IC / I b = 2 A / 0 .2 A )


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    PDF 2SD1760F5 SC-63 TL-2000

    CXB1559Q

    Abstract: CXB1559Q-Y CXB15590 CXB15590-Y e919 SW 5189 C QFP-24M-L02
    Text: SONY C O R P / C O MP O NE NT P RODS SDE Ô3Ô23Ô3 D OGOMDI O 1 «SONY CXB1559Q-Y SONY, H igh-S peed P rogram m able Delay Line/D uty C ycle C o n tro lle r -ji_ ¿y Description The CXB1559Q-Y is an ultra high-speed Pro­ grammable Delay Line/Duty Cycle Controller 1C. Two


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    PDF CXB1559Q-Y 160ps 24pin QFP-24M-S01) 32pin QFP-32M-S01) QFP-24M-L02) CXB1559Q CXB15590 CXB15590-Y e919 SW 5189 C QFP-24M-L02

    D1733

    Abstract: transistors 2sd 2500 2SD1733F5 transistor 239
    Text: 2SD1733F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1733-*Q, where ★ is hFE code and □ is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage


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    PDF 2SD1733F5 SC-63) D1733- 2SB1181 2SD1733F5 1733F5 D1733 transistors 2sd 2500 transistor 239

    Transistor Arrays

    Abstract: transistor SST 126 IMD6 transistor 136 138 140
    Text: "Transistors Surface Mounted Leaded Packages Available-«> Packages Available-110 POWER MOSFET-112 POWER MOSFET- ei MPT • CPT F5 • PSD


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    PDF ailable-------------------------------110 SFET----------------------------------112 T0-220FP O-247 OT-23) SC-59/Japemw PSIP12Pin. LF12Pin Transistor Arrays transistor SST 126 IMD6 transistor 136 138 140

    Untitled

    Abstract: No abstract text available
    Text: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity


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    PDF 2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 001470b

    d1760

    Abstract: 821 transistor
    Text: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760^Q, where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A


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    PDF 2SD1760F5 SC-63) D1760 2SB1184 2SD1760F5 821 transistor

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ » F j T 0 T 7 a S 0 DOlLbfiT 9 0 9 7 2 5 0 TO SH IBA < D IS C R ET E/O P T O t f o À h ì h t SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 5 2 6 7T-M0S) INDUSTRIAL APPLICATIONS


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    PDF 100nA