S22G Search Results

asus m2n-mx

Abstract: m2n-mx Transcend 16gb asus m2n TS8GSSD10-M asus TS16GSSD10-M asus block diagram Transcend DD15
Contextual Info: TTS S22G GS SS SD D1100-M M // TTS S44G GS SS SD D1100-M M TTS S88G GS SS SD D1100-M M // TTS S1166G GS SS SD D1100-M M 1.0” Solid State Disk Description Features The 1-inch Solid State Disk is small in size, has a • RoHS compliant huge capacity and low power consumption making it

transcend ultra flash memory

Abstract: transcend 8gb FLASH MEMORY Transcend Flash Drive TS4GIFD25 39 pin ide connector TS8GIFD25 GA-81945GZME-RH Transcend ide fd25-32 DD11
Contextual Info: TTS S22G GIIFFD D2255 // TTS S44G GIIFFD D2255 // TTS S88G GIIFFD D2255 2.5” IDE FLASH DISK Description Features Ideal for use in harsh environments. Transcend’s • RoHS compliant 2.5” IDE Flash Disks are the best choice for your • Fully compatible with devices and OS that support the

capacitor code GC

Abstract: Transcend Flash Drive 848AH PCMCIA SRAM Card Transcend diagram compactflash card 1F0H-1F7H configuration pio
Contextual Info: TTS S22G G~~88G GC CFF226666 266X CompactFlash Card Features Description • CompactFlash Specification Version 4.1 Complaint The Transcend CF 266X is a High Speed Compact • RoHS compliant products Flash Card with high quality Flash Memory assembled • Single Power Supply: 3.3V±5% or 5V±10%

MMBF5486LT1

Abstract: 318C8 marking gfg 6f
Contextual Info: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol

MMBF4416LT1

Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Am plifier Transistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE 1 DRAIN MAXIMUM RATINGS Symbol Value Unit D ra in -S o u rc e Voltage VdS 30 V dc D ra in -G a te Voltage Vd G 30 V dc G a te -S o u rc e Voltage

MMBF5484

Abstract: MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007
Contextual Info: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below

Contextual Info: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage

j300

Abstract: J300D
Contextual Info: MOTOROLA Order this document by J300/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifier N-Channel — Depletion J300 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDG -25 Vdc Gate Current >G 10 mA Total Device Dissipation @ Ta = 25°C Derate above 25°C

marking BJG sot-23

Abstract: MMBF5484LT1 wire wound IR source MARKING YG SOT-23
Contextual Info: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE M M B F 5 48 4L T 1 Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 Vdc v GS r 25 Vdc Forward Gate Current 'G(f) 10 mAdc

mpf102

Abstract: MPF102 JFET
Contextual Info: ON Semiconductort JFET VHF Amplifier MPF102 N–Channel – Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS –25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25°C

BF245B

Contextual Info: BF245A, BF245B JFET VHF/UHF Amplifiers N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Source Voltage VDS ±30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate −Source Voltage VGS 30 Vdc ID 100 mAdc IG f 10 mAdc 350

2n5555

Abstract: 2N5555-D
Contextual Info: ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10

2N5486

Contextual Info: ON Semiconductort 1 DRAIN JFET VHF/UHF Amplifiers N−Channel — Depletion w 2N5486 3 GATE This device is available in Pb−free package s . Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or

S22G

Abstract: MMBF5484LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE M M B F5484LT1 M otorola Preferred D evice MAXIMUM RATINGS Rating % Symbol Value Unit VdG 25 Vdc VGS r 25 Vdc 'G(f) 10 mAdc 200 2.8 mW mW/°C 2 D rain-G ate Voltage Reverse G ate-Source Voltage

WT transistor

Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

Contextual Info: 2N5486 JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS TJ = 25°C unless otherwise noted Rating Symbol Value Unit Drain −Gate Voltage VDG 25 Vdc Reverse Gate −Source Voltage

2n5484 equivalent

Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G

s11s

Abstract: marking GFG
Contextual Info: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10

Contextual Info: ON Semiconductort 1 DRAIN JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 25 Vdc Reverse Gate–Source Voltage VGSR 25 Vdc ID 30 mAdc Forward Gate Current IG f 10 mAdc

s11s

Contextual Info: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor

Diode Gfg 6f

Abstract: 2N5555 2N5555 equivalent
Contextual Info: MOTOROLA Order this document by 2N5555/D SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage