TRANSISTOR T23 Search Results

TRANSISTOR T23 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR T23 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
transistor with marking 4266 Abstract: BF547W equivalent transistor D 2497 Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the SO T23 version, BF547.	OCR Scan	OT323 BF547W BF547. BF547W MBC870 OT323. transistor with marking 4266 equivalent transistor D 2497	PDF
E2p 28 transistor Abstract: 55C40 BFS17 BFS17A E2p device marking E2p transistor Contextual Info: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING T op view PIN DESCRIPTION	OCR Scan	BFS17 E2p 28 transistor 55C40 BFS17A E2p device marking E2p transistor	PDF
E2p device marking Abstract: BFS17 BFS17A Contextual Info: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING Top view PIN DESCRIPTION	OCR Scan	BFS17 E2p device marking BFS17A	PDF
Contextual Info: bbSB'lBl 0DES8bl 03b « A P X Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBT3640 N AUER PHILIPS/DISCRETE DESCRIPTION b?E D PINNING P N P general purpose switching transistor in a SO T23 package. PIN DESCRIPTION Code: V25 1	OCR Scan	PMBT3640	PDF
BFS17 Abstract: MSB003 BFS17 E1 marking code 10 sot23 MARKING CODE E1 Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic S O T23 package. 2 1 APPLICATIONS • A w ide range of RF applications such as: - M ixers and oscillators in TV tuners - RF com m unications equipm ent.	OCR Scan	BFS17 MSB003 MEA397 BFS17 MSB003 BFS17 E1 marking code 10 sot23 MARKING CODE E1	PDF
transistor 2n Abstract: 3904 Contextual Info: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor	OCR Scan	2N3904 15000kHz 500rr transistor 2n 3904	PDF
MSB003 Abstract: BFS17 RF TRANSISTOR SOT23 5 MARKING CODE 16 transistor sot23 E1P MARKING transistor 04 N 70 BP transistor E1p Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic S O T23 package. 2 1 APPLICATIONS • A w ide range of RF applications such as: - M ixers and oscillators in TV tuners - RF com m un ica tio n s equipm ent.	OCR Scan	BFS17 MSB003 MEA397 RF TRANSISTOR SOT23 5 MARKING CODE 16 transistor sot23 E1P MARKING transistor 04 N 70 BP transistor E1p	PDF
Contextual Info: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is	OCR Scan	QQ2T474	PDF
K 3115 Abstract: transistor marking code 325 bf550R transistor jt BF550 PHILIPS 1980 MARKING SA transistor transistor marking SA Contextual Info: I N AMER PH IL bbS3T31 001S7QÔ =1 IP S/»IS CRETE_ O b E ^ BF550 3 ¡ - 15- r - SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor Is primarily intended for use in i.f. detection applications.	OCR Scan	001S7QÃ BF550 bbS3T31 0Q15710 BF550 T-31-15 K 3115 transistor marking code 325 bf550R transistor jt PHILIPS 1980 MARKING SA transistor transistor marking SA	PDF
TRANSISTOR C 557 B Abstract: BFT25 transistor 1548 b Contextual Info: bbS3T31 Philips Sem iconductors Q0E?53bD bTS ^BAPX - N AUER P H I L I P S / D I S C R E T E Product specification b?E ]> NPN 2 GHz wideband transistor DESCRIPTION c BFT25 PINNING NPN transistor in a plastic SO T23 envelope. PIN It Is primarily intended for use in RF	OCR Scan	bbS3T31 BFT25 TRANSISTOR C 557 B BFT25 transistor 1548 b	PDF
t2369 Contextual Info: Central Sem icon du ctor Corp. C M P T2369 DESCRIPTION: NPN SILICON TRANSISTOR The C EN TR AL SEM IC O N D U C TO R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching	OCR Scan	T2369 CMPT2369 OT-23 100mA 100MHz t2369	PDF
BCV47 philips Abstract: JJ SOT23 BCV27 BCV47 Contextual Info: • btS3*ì31 0024537 Ifl? H A P X N AMER PHILIPS/DISCRETE b?E D BCV27 BCV47 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SO T23 envelope. P-N-P complement is B C V 26/46. QUICK REFERENCE DATA BCV27 Collector-emitter voltage open base	OCR Scan	btS3T31 BCV27 BCV47 BCV26/46. BCV47 philips JJ SOT23 BCV47	PDF
Philips film capacitors 27 pf Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670 Contextual Info: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized	OCR Scan	BLW60C 00b35b2 7Z772S6 7Z77255 Philips film capacitors 27 pf trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670	PDF

programmable unijunction transistor Abstract: "Programmable Unijunction Transistor" ph a5 transistor Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor	OCR Scan	BRY61 BRY61 MGL167 115002/00/03/pp8 programmable unijunction transistor "Programmable Unijunction Transistor" ph a5 transistor	PDF
124ET Abstract: PDTA124ET Contextual Info: DISCRETE SEMICONDUCTORS PDTC124ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET	OCR Scan	PDTC124ET PDTC124ET SCA63 15002/00/05/pp8 124ET PDTA124ET	PDF
Contextual Info: DISCRETE SEMICONDUCTORS PDTC114TT NPN resistor-equipped transistor Objective specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC114TT	OCR Scan	PDTC114TT PDTC114TT PDTA114TT. 114TT SCA63 5002/00/03/pp8	PDF
Contextual Info: DISCRETE SEMICONDUCTORS 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J	OCR Scan	2PA1774J 2PA1774J SC-89 SCA63 5002/00/02/pp8	PDF
transistor tt 2222 Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642 Contextual Info: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.	OCR Scan	711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642	PDF
Contextual Info: DISCRETE SEMICONDUCTORS PMST2369 NPN switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING	OCR Scan	PMST2369 T2369 MAM062 115002/00/03/pp8	PDF
2P transistor Abstract: l43 transistor Contextual Info: DISCRETE SEMICONDUCTORS a ffi SHEET 2PC4617J NPN general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING	OCR Scan	2PC4617J 2PC4617J SC-89 SCA60 115104/00/01/pp8 2P transistor l43 transistor	PDF
Contextual Info: MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	MMBT5401	PDF
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4403 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP switching transistor PMBT4403 FEATURES	OCR Scan	PMBT4403 PMBT4401. PMBT4403 115002/00/03/pp8	PDF
PMBT4401 Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4401 NPN switching transistor Product specification Supersedes data of 1997 May 07 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN switching transistor PMBT4401 FEATURES	OCR Scan	PMBT4401 PMBT4401 PMBT4403. 115002/00/03/pp8	PDF

TRANSISTOR T23 Search Results

TRANSISTOR T23 Result Highlights (5)

TRANSISTOR T23 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

transistor with marking 4266

E2p 28 transistor

E2p device marking

BFS17

transistor 2n

MSB003

K 3115

TRANSISTOR C 557 B

t2369

BCV47 philips

Philips film capacitors 27 pf

programmable unijunction transistor

124ET

transistor tt 2222

2P transistor

PMBT4401