TRANSISTOR TL 16 Search Results

Contextual Info: TOSHIBA TLP624,TLP624-2,TLP624-4 TOSHIBA PHOTOCOUPLER Tl Pfi7d • m GaAs IRED & PHOTO-TRANSISTOR Tl PK?d-7 mg m Tl P f & a - d g ■ u PRO GRAM M ABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION U n it in mm 4 Collector-Em itter Voltage C urrent Transfer Ratio

041 itt diode

Contextual Info: TO SH IB A TLP627,TLP627-2/TLP627-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR Tl PK77 Tl Pfi?7-7 • m g m Tl PK77-J ■ g « ■ PRO G RAM M ABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. The T O S H IB A TLP627, -2, and -4 consist of a g alliu m arsenide

TLP2531

Contextual Info: TOSHIBA TLP2530,TLP2531 TOSHIBA PHOTOCOUPLER Tl • V V ^MT g GaA£As IRED & PHOTO IC Tl P3531 M V M T ■ Unit in mm DEGITAL LOGIC ISOLATION LINE RECEIVER POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a

Scans-048

Abstract: DSAGER000249 schaltungen
Contextual Info: ALLGEMEINE HINWEISE ZU DEN TTL-SERIEN 49/54/74 T TL-IC 's sind integrierte Schaltkreise der Digital­ technik. Die Schaltfunktionen werden durch direkte K opp­ lung in Transistor-Transistor-Logik erreicht. Die Gruppenbezeichnung 54 . . . und 74 . . . kenn­

Contextual Info: lONBSr KS62121KHB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl-B G t3 Single Darlington Transistor Module 1000 Amperes/1200 Volts Description: Powerex High-Beta Single Darlington Transistor Modules are designed for switching applica­

TLP280-4

Contextual Info: TOSHIBA TENTATIVE TLP280,TLP280-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR Tl P7JM g Tl P7SM-A • ■ ^MT ■ U n it in mm PRO G RAM M ABLE CONTROLLERS TLP280 AC/DC-INPUT MODULE PC CARD M O D EM PCMCIA 4| I TLP280 and TLP280-4 is a very sm all and th in coupler, suitable for

Contextual Info: TLP504A,TLP504A-2 T O SH IB A TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR Tl PSnAA • ■ v ■« m | Tl PSnAA-7 ■ ■ v ^ur ■v m PROGRAMMABLE CONTROLLERS U nit in mm AC/DC-INPUT MODULE 7 8 I C\J I +l I SOLID STATE RELAY The TOSHIBA TLP504A and TLP504A-2 consists of

Contextual Info: m NBΠX KD324515HB Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ tl- B G t3 Dual Darlington Transistor Module 150 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex High-Beta Dual Darlington Transistor Modules are

CSA1012

Abstract: CSC2562 ic 356 transistor CSA1012
Contextual Info: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75

LB 124 transistor

Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor

BF324

Abstract: oms 450 Q62702-F311 S420
Contextual Info: 25C » • ô53SbQS GGQ4H73 0 WÊZIZG [; PNP Silicon RF Transistor SIEMENS AKTIENÛESELLSCHAF '3 T -ïl-tl BF 324 D.- fo r large-signal V H F stag es BF 3 2 4 is an epitaxial PNP silicon planar transistor in TO 9 2 plastic package TO A 3

Contextual Info: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type

Contextual Info: DI9405 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 llll iE m "'ELT; tiu u u u TL A P ÏT -M

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

MARKING toshiba TLP621-4

Abstract: TLP621 11-5B2 E67349 TLP621-2 TLP621-4 ul standards for relay
Contextual Info: T O S H IB A TLP621 ,TLP621-2,TLP621 -4 TOSHIBA PHOTOCOUPLER TL P 621, T L P GaAs IRED & PHOTO-TRANSISTOR 6 2 1 -2 , T L P 6 2 1 -4 PRO GRAM M ABLE CONTROLLER AC /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor

k106 transistor

Abstract: BUK106-50L BUK106-50S bu 11 apx buk106
Contextual Info: N AMER PH ILIPS/ DIS CRETE bTE D • ^53=131 □ □ 3 0 4 E tl 4bT « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

LM308 Op Amp IC

Abstract: ic lm741 national semiconductor LB-22 balancing resistors IC lm741 ic LM725 LM741 equivalent C1995 LM121 LM308
Contextual Info: C1995 National Semiconductor Corporation TL H 8728 results ensure that the gain fixing resistors are of the same material or have tracking temperature coefficients It is appropriate to mention offset balancing as this can have a large effect on drift Theoretically the drift of a transistor

Contextual Info: TOSHIBA OISCRETE/OPTOJ 9097250 TOSHIBA TT D I S C R E TE/OPTO dF | T D T V a S D DülbflEO S 1 ~ 99D 16820 D~p-39-i3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Tl-MOS E) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

zener 431

Abstract: 1N5518 1N5519 1N5520 1N5521 1N5522 1N5523 1N5524 1N5525 1N5526
Contextual Info: 2848352 DIODE TRANSISTOR CO A4 DE|afl4flBS2 DDDGltM 4 INC 84D 00 164 D T ‘ tl- ¿>1 | LOW VOLTAGE AVALANCHE ZENER DIODES These low voltage avalanche zener diodes are specifically designed for low current, low noise applica­ tions. The very sharp knees, low leakages, and low impedances at low currents make them ideal for voltage

Contextual Info: DI9942 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low O n-S tate Resistance High Pow er and C urrent C apability Fast Sw itching Speed High T ransient Tolerance SO-8 llll R-CHANNEL tpTffl ,6 TL uuu A

NPN transistor SST 117

Contextual Info: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency

TOSHIBA 1N DIODE

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS

Contextual Info: TOSHIBA TLP2530,TLP2531 TOSHIBA PHOTOCOUPLER Tl • V V ^M T GaA£As IRED & PHOTO IC TM l P 3 5 3 1 g V M T ■ DEGITAL LOGIC ISOLATION U nit in mm LINE RECEIVER POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a

transistor tl 187

Abstract: TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL
Contextual Info: Series TL Ultraminiature «TO 5 transistor size» magnetic latching relays 28 V / 1 A APPLICATION SPECIFICATIONS MIL-R-39016/12 -/29 -/30 ESCC 3602-002 „ General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght 1,6 g with leads 4,75 mm[.187] lenght