TRANSISTOR TL 188 Search Results

TRANSISTOR TL 188 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR TL 188 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UF460 Abstract: 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s Contextual Info: Compound Transistor A if# N 1 A 3 Q St o '< 4 T X Ì È Ì Ì £ 1*1/1 L T ^ R i = 1 .0 kQ , R 2= 10 i - t o kQ o — w v Ri — o A A 1A 3 Q £ n > 7 ° ij y > ? 'J X " itm T è £ w 1 \ v — R2 <» O e (Ta = 25 °C) Tl a& g aE # {ÌL fé n u ? ? •^ - X P I fE	OCR Scan	CycleS50 SC-43B UF460 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s	PDF
2SA1885 Abstract: transistor 2sa1776 Contextual Info: 2SA1885 2SA1812 / 2SA1727 / 2SA1776 Transistors High-frequency Amplifier Transistor, RF switches — 10V, — 0.1 A I 2S A 1885 # F e atu re s • A b s o lu t e m ax im u m ra tin g s (T a = 2 5 'C ) t ) H ig h tran sitio n fre q u e n cy . (T y p . 6 5 0 M H z )	OCR Scan	2SA1885 2SA1812 2SA1727 2SA1776 50yuA 100mA/-- transistor 2sa1776	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242	PDF
Transistor D 1881 Abstract: BD239D Contextual Info: BD239D, BD239E, BD239F NPN SILICON POWER TRANSISTORS Copyright Q 1997, Power Innovations Umltad, UK • 30 W at 25°C Case Temperature • 2 A Continuous Collector Current • 4 A Peak Collector Current • Customer-Spectftoci Selections Available SEPTEMBER 1881 - REVISED MARCH »997	OCR Scan	BD239D, BD239E, BD239F O-220 BD239D B0239Ë BD239E Transistor D 1881	PDF
equivalent transistor TIP3055 Abstract: 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 2N3055 equivalent transistor c2688 transistor Contextual Info: t e x a s T n s T ìT ^ ìo p I r -8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR r - 1 ? - / 3 DEC EM BER 1970 - REVISED OCTOBER 1884 • Designed for Complementary U se with TIP2955 • 90 W at 25° C C ase Temperature	OCR Scan	TIP3055 TIP2955 2N3055 T0-218AA 7S265 Ttil72ti 37D0C1 equivalent transistor TIP3055 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 2N3055 equivalent transistor c2688 transistor	PDF
atc200b104kw50 Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147	PDF
IC 741 OPAMP Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte	Original		PDF
lg crt monitor rgb cable Abstract: lg crt monitor circuit diagram Helitrim CRT MONITOR SCHEMATIC DIAGRAM monochrome HP1120A LG crt monitor PCB diagram crt monitor block diagram lg 15 lm1201 Helitrim Model 91 LM1201N Contextual Info: LM1201 £3 National ÆM Semiconductor LM1201 Video Amplifier System General Description The LM1201 is a wideband video amplifier system intended for high resolution monochrome or RGB monitor applica tions. In addition to the wideband video amplifier the	OCR Scan	LM1201 LM1201 LM1203 F/15V, LM1201. lg crt monitor rgb cable lg crt monitor circuit diagram Helitrim CRT MONITOR SCHEMATIC DIAGRAM monochrome HP1120A LG crt monitor PCB diagram crt monitor block diagram lg 15 Helitrim Model 91 LM1201N	PDF
TL 188 TRANSISTOR PIN DIAGRAM Abstract: PEAK DETECTOR System on a chip TRANSISTOR CODE SA5 Contextual Info: Philips Semiconductors Product specification Postamplifier with link status indicator DESCRIPTION SA5214 PIN CONFIGURATION The SA 5 2 1 4 is a 75M H z postamplifier system designed to accept low level high-speed signals. These signals are converted into a	OCR Scan	SA5214 SA5214 SA5210, SA5211 SA5212 TL 188 TRANSISTOR PIN DIAGRAM PEAK DETECTOR System on a chip TRANSISTOR CODE SA5	PDF
Contextual Info: REVISIONS mullicnmn •■■Mil1 wwl I IM DOC. NO SPC— F004 * Effective: 7 / 8 / 0 2 * DCP No: 1398 DCP # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE 1262 A RELEASED HO 3/26/03 JWM 3/26/03 DJC 3/26/03 1885 B UPDATED TO ROHS COMPLIANCE EO 02/03/06	OCR Scan	O--39 2N1711 35C0685	PDF
Contextual Info: N E C ELECTRONICS INC 6427525 N E C Tû ELECTRONICS INC DE \| bM E7S 25 OGlöflSS 2 J ~ 98D 18855 MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE FAST SWITCHING N-CHANNEL SILICON POWER P A C K A G E D IM E N S IO N S 6 - S ± 0 .2 . i f {U n it : m m 2 .3 : 0.2	OCR Scan		PDF
LM1203N Contextual Info: Ja n u a ry 1996 Semiconductor LM1203 RGB Video Amplifier System General Description Features The LM1203 is a wideband video amplifier system intended for high resolution RGB color monitor applications. In addi tion to three matched video amplifiers, the LM1203 contains	OCR Scan	LM1203 LM1201 bS01124 LM1203N	PDF
pin out of lm338 Abstract: LM33B lm338 OF IC LM338 LM338 used as a current regulator application note for lm338 12v 5amp battery charger adjustable current limiter lm338 7105A-AT2-502 LM138/LM338 Contextual Info: LM138/LM338 National Semiconductor LM138, LM338 5-Amp Adjustable Regulators General Description The LM138 series of adjustable 3-terminal positive voltage regulators is capable of supplying in excess of 5A over a 1.2V to 32V output range. They are exceptionally easy to	OCR Scan	LM138/LM338 LM138, LM338 LM138 TL/H/9060-25 TL/H/9060-- pin out of lm338 LM33B OF IC LM338 LM338 used as a current regulator application note for lm338 12v 5amp battery charger adjustable current limiter lm338 7105A-AT2-502 LM138/LM338	PDF
g21 Transistor Abstract: PMBTH10 PMBTH81 Contextual Info: □□¿SW Philips Semiconductors ESI H A P X Product specification PNP 1 GHz switching transistor ^ ÂI1ER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN • High transition frequency. PMBTH81 t,7E ]> DESCRIPTION Code: V31 1 base DESCRIPTION 2 emitter	OCR Scan	bbS3T31 PMBTH81 PMBTH10. PMBTH81 MRAS67 g21 Transistor PMBTH10	PDF

M0607 Contextual Info: _ - . :- . ~~_ . ~~ - N AMER PHIL IPS /D IS CR ET E _ Gt.E D ' • ii ~ ■ ■ ■■ t.bS3T31 D01SD4S Ì ■ 11 ■ M06075B400Z M AINTENANCE TYPE r - a s - i g - PULSED MICROWAVE POWER TRANSISTOR	OCR Scan	Q015045 M06075B400Z M0607	PDF
NTE163A Contextual Info: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V	Original	NTE163A NTE163A 100mA,	PDF
667 transistor ecb Abstract: EVL32-060 A50L-0001-0109 Contextual Info: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)	OCR Scan	O-237 667 transistor ecb EVL32-060 A50L-0001-0109	PDF
NTE389 Contextual Info: NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction	Original	NTE389 NTE389	PDF
CMT20N20N220 Contextual Info: CMT20N20 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode	Original	CMT20N20 CMT20N20N220	PDF
Contextual Info: LM1203 National Semiconductor LM1203 RGB Video Amplifier System General Description Features The LM1203 is a wideband video amplifier system intended for high resolution RGB color monitor applications. In addi tion to three matched video amplifiers, the LM1203 contains	OCR Scan	LM1203 LM1203 LM1201 TL/H/9170-10 LM1203/LM1881	PDF
SV-03 diode Abstract: tl5941 TL595C TL694C TL594C TL594 TL594I TL595 Tl595cn TL-694 Contextual Info: TEXAS INSTR LIN/INTFC IfiE J> m 0 Tbl 7 S 4 GOTÌS^l ti TL594I, TL594C, TL595G PULSE-WIDTH-MODULATION CONTROL CIRCUITS D2712, A PRIL 1883—R EV ISED O C TO BER 1988 TL594I. TL594C . . . D. J . OR N PACKAGE (TOP VIEW) • Complete PWM Power Control Circuitry	OCR Scan	TL594I, TL594C) TL595G D2712, 1983-REV1SED 200-mA TL595 TL594 U1724 SV-03 diode tl5941 TL595C TL694C TL594C TL594I Tl595cn TL-694	PDF
NTE386 Abstract: npn 10a 800v Contextual Info: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited	Original	NTE386 NTE386 300ms, npn 10a 800v	PDF
2SA1885 Abstract: transistor 2sa1776 Contextual Info: 2SA1885 2SA1812/ 2SA1727 / 2SA1776 Transistors High-frequency Am plifier Transistor, RF switches — 10V, — 0.1A 2SA1885 0 Features >A bsolute maxim um ratings (T«=25'C ) 1 ) High transition frequency. (Typ. 650M H z) P aram eter Collector-base voltage	OCR Scan	2SA1885 2SA1812/ 2SA1727 2SA1776 2SA1885 transistor 2sa1776	PDF
LM78MGCP Abstract: lm79mgcp lm78mg P04A 2m6124 78MG OLS-3 LM79MG 5Z7-C49 d408 Contextual Info: *«H- « !S83 d U H A p ril 1991 S e m ic o n d u c t o r LM78MG/LM79MG 4-Terminal Adjustable Voltage Regulators Features • ■ ■ ■ ■ ■ Output current in excess of 0.5A LM78MG positive output voltage + 5.0V to + 30V LM79MG negative output voltage -3 0 V to -2 .6 V	OCR Scan	LM78MG/LM79MG LM78MG LM79WG LM79MG. LM79MG 3-3112S36 LM78MGCP lm79mgcp P04A 2m6124 78MG OLS-3 5Z7-C49 d408	PDF

TRANSISTOR TL 188 Search Results

TRANSISTOR TL 188 Result Highlights (5)

TRANSISTOR TL 188 Datasheets Context Search

UF460

2SA1885

tl249

Transistor D 1881

equivalent transistor TIP3055

atc200b104kw50

IC 741 OPAMP

lg crt monitor rgb cable

TL 188 TRANSISTOR PIN DIAGRAM

LM1203N

pin out of lm338

g21 Transistor

M0607

NTE163A

667 transistor ecb

NTE389

CMT20N20N220

SV-03 diode

NTE386

2SA1885

LM78MGCP