CEDM7001
Abstract: mosfet low vgs n-channel mosfet transistor low power CEDM7001E
Text: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for
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CEDM7001E
CEDM7001E
OT-883L
100mW
CEDM7001E:
100mA
16-March
CEDM7001
mosfet low vgs
n-channel mosfet transistor low power
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Untitled
Abstract: No abstract text available
Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for
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CEDM8001
100mW
OT-883L
CEDM8001:
100mA
29-November
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CEDM7001
Abstract: No abstract text available
Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for
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CEDM7001
CEDM7001
OT-883L
100mW
CEDM7001:
100mA
29-November
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CEDM7001
Abstract: mosfet low vgs mosfet vgs 5v
Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for
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CEDM7001
CEDM7001
OT-883L
100mW
CEDM7001:
100mA
31-July
mosfet low vgs
mosfet vgs 5v
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n-channel mosfet transistor low power
Abstract: CEDM7001
Text: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for
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CEDM7001E
CEDM7001E
OT-883L
100mW
CEDM7001E:
100mA
20-November
n-channel mosfet transistor low power
CEDM7001
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sot883l
Abstract: CEDM7001
Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for
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CEDM7001
100mW
OT-883L
CEDM7001:
100mA
16-March
sot883l
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CEDM8001
Abstract: No abstract text available
Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for
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CEDM8001
CEDM8001
OT-883L
100mW
CEDM8001:
100mA
16-March
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Untitled
Abstract: No abstract text available
Text: RY A N I CEDM7004 Central IM EL PR TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process,
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CEDM7004
CEDM7004
OT-883L
tp10s
400mA
200mA
100mA
16-June
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2N7269U
Abstract: IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U
Text: PD - 90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.100Ω Ω, MEGA RAD Hard REF:MIL-PRF-19500/603 N CHANNEL MEGA RAD HardTM TM HEXFET® Inter national Rectifier’s RAD Hard technology
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90679E
IRHN7250
IRHN8250
JANSR2N7269U
JANSH2N7269U
200Volt,
MIL-PRF-19500/603)
1x106
2N7269U
IRHN7250
IRHN8250
JANSH2N7269U
JANSR2N7269U
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CEDM7004
Abstract: No abstract text available
Text: CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver
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CEDM7004
CEDM7004
OT-883L
tp10s
400mA
200mA
100mA
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p-channel mosfet transistor low power
Abstract: mosfet low vgs CEDM8001 p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V
Text: CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
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CEDM8001
CEDM8001
OT-883L
100mA
29-February
p-channel mosfet transistor low power
mosfet low vgs
p-channel DMOS
P-channel MOSFET VGS -25V
P-channel power mosfet 30V
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Untitled
Abstract: No abstract text available
Text: Data Sheet October 6, 2003 Document No: DS03-083 ver. 1.0 PDF name: microlynx_sip_3v-5.5v.pdf Austin MicroLynx SIP Non-isolated Power Modules: 3.0Vdc – 5.5Vdc input; 0.75Vdc to 3.3Vdc Output; 5A Output Current TM Features Delivers up to 5A output current
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DS03-083
75Vdc
x3001
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C3225X5R0J226V
Abstract: AXH003A0X AXH003A0X4 SR-332
Text: Data Sheet May 9, 2005 Austin MiniLynx SIP: Non-Isolated DC-DC Power Modules: 2.4 – 5.5Vdc input; 0.75Vdc to 3.63Vdc Output; 3A Output Current TM Features Directive 2002/95/EC RoHS compatible Delivers up to 3A output current Industry standard footprint
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75Vdc
63Vdc
2002/95/EC
SR-332
x3001
DS04-040
C3225X5R0J226V
AXH003A0X
AXH003A0X4
SR-332
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Untitled
Abstract: No abstract text available
Text: Data Sheet October 6, 2003 Document No: DS03-082 ver. 1.0 PDF name: microlynx_smt_3.3v-5v.pdf Austin MicroLynx SMT Non-isolated Power Modules: 3.0Vdc – 5.5Vdc input; 0.75Vdc to 3.3Vdc Output; 5A Output Current TM Features Delivers up to 5A output current
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DS03-082
75Vdc
x3001
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transistor m285
Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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167A690
182A934
1x106
1x1014
1x109
1x10-11
1x1012
5962H92153
36-Lead
28-Lead
transistor m285
167A690
transistor C013
transistor k450
transistor f630
182A934
cm c013
D650
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Untitled
Abstract: No abstract text available
Text: F A I R C H M arch 1998 I L D M IC O N D U C TO R tm FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperS0T -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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FDN337N
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10N25
Abstract: No abstract text available
Text: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES
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MTM10N25
MTP10N25
0J570
19XACE
30i0012
TQ-204AA
21A-04
O-220AB
10N25
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70910
Abstract: transistor cny CNY17F-1X E91231
Text: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a
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46fibSlQ
17F-1X,
17F-2X,
17F-3X,
17F-4X
IF-20mA)
70910
transistor cny
CNY17F-1X
E91231
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CNY17F-1X
Abstract: CNY17F-2X E91231 cny 17 ISOCOM lot number transistor cny CNY 27-4
Text: ISOCOM CO MP O N E N T S LTD HôfibSlO QQ QOS SM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a
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46fibS10
17F-1X,
17F-2X,
17F-3X,
17F-4X
IF-20mA)
CNY17F-1X
CNY17F-2X
E91231
cny 17
ISOCOM lot number
transistor cny
CNY 27-4
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MOC302
Abstract: amplifier - ATH 226 IRGB40S htr 1031 MOC3021 equivalent nomograph triac inverter P12FS
Text: ANALOG DEVICES FEATURES Tem perature Sensor Includes 100 Ü Heater Heater Provides Power IC Emulation Accuracy ± 3 °C ty p . from —4 0 °C to +100°C Operation to +150° C 5 m V / C Internal Scale-Factor Resistor Program m able Tem perature Setpoints 20 mA Open-Collector Setpoint Outputs
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TMP12*
TMP12.
TMP12
TIP-110,
TMP12
MOC302
amplifier - ATH 226
IRGB40S
htr 1031
MOC3021 equivalent
nomograph
triac inverter
P12FS
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LM 7209
Abstract: No abstract text available
Text: ISOCOM COMPONENTS LTD 45E » • HôfibSlD GQDDE54 H ■ ISO 3 j CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X ~ ~ OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT “ ir : p S i t f l s§ ? f è S $ s DESCRIPTION The CNY 17 is a optically coupled isolator consisting
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GQDDE54
17F-1X,
17F-2X,
17F-3X,
17F-4X
IF-20m
LM 7209
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TP52N06V
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP52N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This
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MTP52N06V/D
TP52N06V
21A-06
TP52N06V
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1N914
1N4148
1N4150
1N4565
1N4565A
1N4566
1N4566A
1N4570
1N4570A
1N4571
bc 7-25 pnp
transistor bc 7-25
transistor 724
731 zener diode
transistor B 722
transistor Bc 2n2222
transistor BC 176
MPS6521
transistor 2N5952
TP2222A transistor
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rkm 34 transistor
Abstract: RKM 24 sm transistor
Text: SA NY O S E M I C O N D U C T O R CO R P 53E D ? cH 7 0 7 b 000^0^7 TIT » T S A J T - ^ 2 - 3 3 . I Ordering num br EN39661 CMOS LSI SAXYO LC5872, LC5873, LC5874, LC5876 4-bit Single-chip Microprocessors P r e lim in a r y OVERVIEW H ie LC5872. LC5873, LC5874 and LC5876 are 4-bit single-chip microprocessors designed for low-voltage
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EN39661
LC5872,
LC5873,
LC5874,
LC5876
LC5872.
LC5874
LC5876
KBR-400B
rkm 34 transistor
RKM 24 sm transistor
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