TRANSISTOR TOSHIBA 2SK Search Results

TRANSISTOR TOSHIBA 2SK Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR TOSHIBA 2SK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK2854	PDF
Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK2854	PDF
Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK2854	PDF
Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK2855	PDF
Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK2855	PDF
Power MOSFET, toshiba Abstract: 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK3074 630mW Power MOSFET, toshiba 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor	PDF
Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK3074 630mW	PDF
Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK3074 630mW	PDF
TOSHIBA NOTE Abstract: 2SK3074 Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK3074 630mW TOSHIBA NOTE 2SK3074	PDF
Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA	Original	2SK3074 630mW	PDF
Contextual Info: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3475	PDF
Contextual Info: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW	PDF
STF 410 B 2 A Abstract: 16698 Contextual Info: TOSHIBA -CDISCRETE/OPTOJ Ti 9097250 TOSHIBA <DISCRETE/OPTO> ¿ ÿ o s h ih t DE I t DTTBSO ODlbbTö 99D 16698 SEMICONDUCTOR DTSS-oq TOSHIBA FIELD EFFECT TRANSISTOR 2SK529 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS INDUSTRIAL APPLICATIONS Unit in mm	OCR Scan	100nA T0-220 STF 410 B 2 A 16698	PDF
A45A Abstract: SO402 2SK386 j2f3 16664 Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.	OCR Scan	100nA A45A SO402 2SK386 j2f3 16664	PDF

2SK3756 Contextual Info: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW 2SK3756	PDF
2SK3756 Abstract: MARKING CODE c5 sc-62 Contextual Info: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW 2SK3756 MARKING CODE c5 sc-62	PDF
Contextual Info: 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other	Original	2SK3756 32dBmW	PDF
Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use	Original	2SK2854	PDF
TOSHIBA Semiconductor Reliability Handbook Abstract: 2SK2854 Contextual Info: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use	Original	2SK2854 TOSHIBA Semiconductor Reliability Handbook 2SK2854	PDF
Contextual Info: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.	Original	2SK3077	PDF
Contextual Info: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE niiinfi? Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance	OCR Scan	2SK1062 2SJ168.	PDF
L713 Contextual Info: TOSHIBA {DISCRETE/OPTO} Ti 99D 16713 9097250 TOSHIBA CDISCRETE/OPTO ^osfiilx D E ^ T D T V B S O DD1 L713 14 D r - s î ' TOSHIBA FIELD EFFECT TRANSISTOR’ SEMICONDUCTOR I3 2SK 538 TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-M0S) INDUSTRIAL APPLICATIONS	OCR Scan	100nA L713	PDF
2SK3077 Contextual Info: 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS GSM (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use.	Original	2SK3077 2SK3077	PDF
TOSHIBA Semiconductor Reliability Handbook Abstract: 2SK2855 Contextual Info: 2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use	Original	2SK2855 TOSHIBA Semiconductor Reliability Handbook 2SK2855	PDF

TRANSISTOR TOSHIBA 2SK Search Results

TRANSISTOR TOSHIBA 2SK Result Highlights (5)

TRANSISTOR TOSHIBA 2SK Datasheets Context Search

Power MOSFET, toshiba

TOSHIBA NOTE

STF 410 B 2 A

A45A

2SK3756

2SK3756

TOSHIBA Semiconductor Reliability Handbook

L713

2SK3077

TOSHIBA Semiconductor Reliability Handbook