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    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TYPES FULL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology

    high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz

    Abstract: S11A1 Glossary of Microwave Transistor Terminology
    Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .


    Original     		PDF 5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904SL C NPN Epitaxial Silicon Transistor Features • General purpose amplifier transistor. • Ultra small surface mount packagefor all types max 0.43mm tall • Suitable for general switching & amplification • Well suited for portable application


    Original     		PDF MMBT3904SL MMBT3906SL OT-923F MMBT3904SL

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings


    Original     		PDF MMBT2222AT OT-523F MMBT2222AT

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    JESD22a121

    Abstract: marking A02 KTMC1060SC MMBT2222AT JESD22A111
    Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings


    Original     		PDF MMBT2222AT OT-523F MMBT2222AT JESD22a121 marking A02 KTMC1060SC JESD22A111

    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings


    Original     		PDF MMBT2222AT MMBT2222AT OT-523F

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A04


    Original     		PDF MMBT3904T OT-523F MMBT3906T MMBT3904T

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06


    Original     		PDF MMBT3906T OT-523F MMBT3904T MMBT3906T

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906SL PNP Epitaxial Silicon Transistor Features • • • • • • General purpose amplifier transistor Ultra small surface mount package for all types max 0.43mm tall Suitable for general switching & amplification Well suited for portable application


    Original     		PDF MMBT3906SL MMBT3904SL OT-923F

    marking A06

    Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
    Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application


    Original     		PDF MMBT3906T OT-523F MMBT3904T MMBT3906T marking A06 marking A06 amplifier KTMC1060SC transistor j25

    1377 transistor

    Abstract: SOT-923F MMBT3906SL
    Text: MMBT3906SL PNP Epitaxial Silicon Transistor Features • • • • • • General purpose amplifier transistor Ultra small surface mount package for all types max 0.43mm tall Suitable for general switching & amplification Well suited for portable application


    Original     		PDF MMBT3906SL MMBT3904SL OT-923F 1377 transistor SOT-923F

    marking A04

    Abstract: KTMC1060SC MMBT3904T MMBT3906T a04 marking
    Text: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A04 • Well suited for portable application


    Original     		PDF MMBT3904T OT-523F MMBT3906T MMBT3904T marking A04 KTMC1060SC a04 marking

    MPS8099

    Abstract: mps8099 transistor transistor t 04 27
    Text: MPS8098 MPS8099 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS8098 and MPS8099 types are NPN silicon transistors designed for general purpose audio amplifier applications. PNP complementary types are MPS8598 and


    Original     		PDF MPS8098 MPS8099 MPS8598 MPS8599. mps8099 transistor transistor t 04 27

    transistor j25

    Abstract: SOT-923F KTMC1060SC MMBT3904SL MMBT3906SL ktmc 150 j75
    Text: MMBT3906SL C PNP Epitaxial Silicon Transistor Features E • General purpose amplifier transistor. B • Ultra small surface mount package for all types max 0.43mm tall • Suitable for general switching & amplification SOT-923F • Well suited for portable application


    Original     		PDF MMBT3906SL OT-923F MMBT3904SL MMBT3906SL transistor j25 SOT-923F KTMC1060SC ktmc 150 j75

    mps6534

    Abstract: MPS-6533
    Text: MPS6533 MPS6534 MPS6535 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS6533 series types are PNP silicon transistors designed for general purpose amplifier applications. The NPN complementary types are MPS6530, MPS6531, MPS6532 respectively.


    Original     		PDF MPS6533 MPS6534 MPS6535 MPS6530, MPS6531, MPS6532 MPS-6533

    2n3904

    Abstract: 2n3904 225 2n3904 npn 2N3903 transistor switching transistor 30v npn transistor 2N3905 TRANSISTOR 2N3904 E 25
    Text: 2N3903 2N3904 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906.


    Original     		PDF 2N3903 2N3904 2N3905 2N3906. 100mA 100MHz 100kHz 2n3904 225 2n3904 npn 2N3903 transistor switching transistor 30v npn transistor 2N3905 TRANSISTOR 2N3904 E 25

    PNP switching transistor 2N3906 mhz

    Abstract: transistor 2N3905 2n3906 2N3906 NPN Transistor 2N3904 CENTRAL
    Text: 2N3905 2N3906 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3905 and 2N3906 types are PNP silicon transistors designed for general purpose amplifier and switching applications. NPN complementary types are 2N3903 and 2N3904.


    Original     		PDF 2N3905 2N3906 2N3903 2N3904. 100mA 100MHz 100kHz PNP switching transistor 2N3906 mhz transistor 2N3905 2N3906 NPN Transistor 2N3904 CENTRAL

    mps6531

    Abstract: MPS6530 MPS-6530 Amplifier Transistor NPN 40V 100mA
    Text: MPS6530 MPS6531 MPS6532 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS6530 series types are NPN silicon transistors designed for general purpose amplifier applications. The PNP complementary types are MPS6533, MPS6534, MPS6535 respectively.


    Original     		PDF MPS6530 MPS6531 MPS6532 MPS6533, MPS6534, MPS6535 MPS-6530 Amplifier Transistor NPN 40V 100mA

    2N3683

    Abstract: 2N6385 shockley diode 2N6383 2N6384
    Text: 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N6383 2N6384 2N6385 2N3683 2N6385 shockley diode 2N6383 2N6384

    bsx62

    Abstract: BSX63 vbe 10v, NPN Transistor
    Text: Central BSX62 BSX63 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX62, BSX63 types are NPN Silicon Transistors designed for general purpose applications where high collector current is required. MARKING: FULL PART NUMBER


    Original     		PDF BSX62 BSX63 BSX62, BSX62) 100mA 200mA vbe 10v, NPN Transistor

    CD4511B

    Abstract: No abstract text available
    Text: HARRIS CD4511B Types CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Types 20-V olt Rating D IS P L A Y aiZZHSblB1! 6 • CD4511B types are BCD-to-7-segment latch decoder drivers constructed w ith CMOS logic and n-p-n bipolar transistor out­ put devices on a single monolithic structure.


    OCR Scan     		PDF CD4511B 92CS-Z5087 92CM-27oe7Ri 4511B

    CD4511B

    Abstract: No abstract text available
    Text: CD4511B Types CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Types 20-V o lt Rating a / c* 3 H 5 b 1 B 9 B 2 3 4 5 6 7 lc / sT The CD4511B types are BCD-to-7-segment latch decoder drivers con structe d w ith CMOS logic and n-p-n bipolar transistor out­


    OCR Scan     		PDF CD4511B CD4511B