MPS6530 Search Results

mps6531

Abstract: MPS-6530 2n4400 motorola
Contextual Info: MPS6530 MPS6531 CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Ve b o 5,0 Vdc Collector-Emitter Voltage Collector Current — Continuous >C 600 mAdc Total Device Dissipation

mps6534

Abstract: mps6533 ta60c
Contextual Info: MPS6533 MPS6534 MPS6535 PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS6533 series types are PNP silicon transistors designed for general purpose amplifier applications. The NPN complementary types are MPS6530, MPS6531, MPS6532 respectively.

Contextual Info: <$£mi-Conc[uckoi ^Pr , inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS TO-92 Symbol Value Unit Collector- Emitter Voltage

MPS6530

Abstract: MPS6531
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package E BC AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

Contextual Info: MPS6530 MPS6531 C ASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Sym bol Value CoNector-Emitter Voltage Rating v CEO 40 Unit Vdc C ollector-Base Voltage v CBO 60 Vdc Emitter-Base Voltage Ve b o 5.0 Vdc Collector Current — C ontinuous 'c 600 m A dc Total Device D issipation (a T>\ = 25CC

mps6534

Abstract: MPS-6533
Contextual Info: MPS6533 MPS6534 MPS6535 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS6533 series types are PNP silicon transistors designed for general purpose amplifier applications. The NPN complementary types are MPS6530, MPS6531, MPS6532 respectively.

mps6531

Abstract: MPS-6530
Contextual Info: MPS6530 MPS6531 MPS6532 NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS6530 series types are NPN silicon transistors designed for general purpose amplifier applications. The PNP complementary types are MPS6533, MPS6534, MPS6535 respectively.

MPS6531

Abstract: MPS6534 MPS-6530 MPS6530 MPS6533 MPS-6533 MPS6532 MPS6535
Contextual Info: MPS6530 MPS6531 MPS6532 MPS6533 MPS6534 MPS6535 NPN SILICON PNP (SILICON) NPN/PNP SILIC O N A N N U L A R T R A N SIST O R S NPN/PNP SILICO N COM PLEM EN TARY A M PLIFIER TRA N SISTO R S . designed for use in co m ple m e n tary am plifier applications.

transistor mps6531

Abstract: MPS6530 MPS6531
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package E BC AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package E BC AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

MPS6551

Abstract: MPS653 MPS-6533 MPS6533
Contextual Info: MPS 6 53 0 through MPS 6535 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS & SWITCHES CASÉ T0-92A THE MPS653O THROUGH MPSÔ535 ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS UP TO 600mA COLLECTOR CURRENT. THE MPS6530, MPS6531» MPS6532

Contextual Info: MPS6530 MPS6531 CASE 29-04, STYLE 1 TO-92 TO-226AA M A X I M U M R A T IN G S Symbol Value Unit C o lle cto r-E m itte r V o lta g e v CEO 40 V dc C o lle cto r-B ase V o lta g e VCBO 60 Vdc E m itte r-B a se V olta g e Vebo 5.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s

MPS6533

Abstract: MPS6530 MPS6531 MPS6532 MPS6534 MPS6535 MPS-6531 MPS-6533
Contextual Info: MPS6530 thru MPS6535 continued M P S 6 5 3 0 th ru M P S 6 5 3 2 ( N P N ) E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 2 5 °C unless otherwise noted) Characteristic Symbol Min Typ M ax Unit Vdc C o lle c t o r -B a s e Breakdow n V o ltag e (I c = 10 jiA dc, I E = 0)

MPS6533

Abstract: MPS-6530 MPS6530 MPS6531 MPS6534 npn power amplifier circuit MPS6532 MPS6535 MPS-6533
Contextual Info: MPS6530 MPS6531 MPS6532 MPS6533 MPS6534 MPS6535 NPN SILICON PNP (SILICON) NPN/PNP SILIC O N A N N U L A R T R A N SIST O R S NPN/PNP SILICO N COM PLEM EN TARY A M PLIFIER TRA N SISTO R S . designed for use in complementary amplifier applications. • Collector-Emitter Breakdown @ lc = 10 m Adc

transistor mps6530 equivalent

Abstract: transistor 2n4401 equivalent transistor 2n4400 equivalent 2N4400 2N4401 MPS6530 2n4401 motorola charge 2n4401 2n4401 equivalent transistor
Contextual Info: MOTOROLA Order this document by MPS6530/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 EMITTER 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

L0000

Abstract: MPS6530 MPS6531 transistor mps6531 c 2579 transistor
Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530 MPS6531 TO-92 Plastic Package E BC AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

mps6531

Abstract: MPS6530 MPS-6530 Amplifier Transistor NPN 40V 100mA
Contextual Info: MPS6530 MPS6531 MPS6532 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPS6530 series types are NPN silicon transistors designed for general purpose amplifier applications. The PNP complementary types are MPS6533, MPS6534, MPS6535 respectively.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

mpsa25c

Abstract: MPS-A12 MPS6576C
Contextual Info: AL L E GRO MI C ROS Y S T E MS I NC T3 D • 0504330 DDQBSbb - 8514019 SPRAGUE. 7 ■ ALGR , ^ 93D 03566 3 ' X ' f l i l ~\£> SEMICONDS / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

2N3643

Abstract: 2N2222 2N3643 TO-105 2N2219/2N2222 bc140 high voltage npn to-92 BC727 2N2219 2N3300 2N3302
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) DEVK : e NO. Item Po arity NPN PNP hFE VCEO @ >C (VCER) (hfe) V rnA Min/Max Min VCE(sat) V @ lc

2N3904

Abstract: ztx51 MPS3645 2N4401 2N4403 BC183P BC213P BCY59P BCY79P ZTX108
Contextual Info: PNP GENERAL PURPOSE TABLE 2 - continued Max Type V CBO V ceo Max 'c mA V h FE V c E s a t at lc mA mA 10 0 -5 Ib Min Max at Min fT at at Complement lc = 25°C lc mA MHz mA mW V V ZTX531 45 45 500 0 -7 BCY79P 45 45 200 0 -25 10 0 -25 120 460 ZTX213 45 30