TRANSISTOR WE Search Results
TRANSISTOR WE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CA3081F |
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CA3081 - Small Signal Bipolar Transistor |
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CA3082 |
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CA3082 - Small Signal Bipolar Transistor |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TRANSISTOR WE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
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A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p | |
foto sensor
Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
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GPXY6052 foto sensor optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263 | |
foto sensor
Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
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GPX06992 foto sensor Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter | |
BSY59
Abstract: TRANSISTOR W 59
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BSY59 BSY59 -S157 TRANSISTOR W 59 | |
2SD2696Contextual Info: 2SD2696 Transistors Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) 1.2 0.32 zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. |
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2SD2696 400mA 300mA 100mA 2SD2696 | |
Contextual Info: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208 |
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MMBT3904 OT-23, OT-23 MIL-STD-202G, | |
TRANSISTOR SMD MARKING CODE 1P
Abstract: 1P smd transistor F318 transistor smd marking NA sot-23
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MMBT2222A OT-23, OT-23 MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P 1P smd transistor F318 transistor smd marking NA sot-23 | |
TRANSISTOR C 2026
Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
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2SB817E 2SB817E MIL-STD-750, TRANSISTOR C 2026 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817 | |
smd TRANSISTOR code marking 2F
Abstract: transistor pnp 20v, 2.5a smd
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MMBT2907A OT-23, OT-23 MIL-STD-202G, smd TRANSISTOR code marking 2F transistor pnp 20v, 2.5a smd | |
smd transistor 1g
Abstract: smd TRANSISTOR AH 2 smd transistor 24 sot23
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MMBTA06 OT-23, OT-23 MIL-STD-202G, smd transistor 1g smd TRANSISTOR AH 2 smd transistor 24 sot23 | |
vmt3Contextual Info: Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zDimensions (Unit : mm) zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low. |
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2SD2696 400mA 300mA 100mA 2SD2696 R0039A vmt3 | |
Contextual Info: Low frequency transistor for amplification 2SD2696 Structure NPN Silicon Epitaxial Planar Transistor Dimensions (Unit : mm) Features 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low. |
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2SD2696 400mA 300mA 100mA R0039A | |
4 channel triac opto
Abstract: transistor transistor AC Switch OPTO- DARLINGTON dual channel opto triac ac opto triac Photo Relays DIP SWITCH 10 PIN photo transistor zero voltage AC 8 PIN
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
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O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 | |
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2SD2696Contextual Info: Low frequency transistor for amplification 2SD2696 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low. |
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2SD2696 400mA 300mA 100mA R0039A 2SD2696 | |
NPN SMALL SIGNAL TRANSISTOR
Abstract: transistor 2n5551 2N5551 transistor equivalent 2n5551 Transistor AH 10
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2N5551 MIL-STD-202G, NPN SMALL SIGNAL TRANSISTOR transistor 2n5551 2N5551 transistor equivalent 2n5551 Transistor AH 10 | |
Contextual Info: SMALL SIGNAL HIGH VOLTAGE TRANSISTOR NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208 |
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2N5551 MIL-STD-202G, | |
PUMF12
Abstract: MCE153
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MBD128 PUMF12 OT363 OT323 SC-70) 613514/01/pp7 PUMF12 MCE153 | |
PUMF11Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor |
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MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PUMF11 | |
PUMF12
Abstract: 10311 PNP TRANSISTOR SOT363
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MBD128 PUMF12 OT363 OT323 SC-70) 613514/01/pp7 PUMF12 10311 PNP TRANSISTOR SOT363 | |
PNP TRANSISTOR SOT363
Abstract: PUMF11
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MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PNP TRANSISTOR SOT363 PUMF11 | |
transistor sc 308
Abstract: DTA143EE SMD310
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DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310 | |
transistor sc 308
Abstract: DTC114TE SMD310
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DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 | |
BUX45
Abstract: transistor et 460
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CB-19 BUX45 transistor et 460 |