TRANSISTORS MARKING HK Search Results

bcw81

Abstract: BCW71
Contextual Info: r = T S G S - T ^7 # f H O M S O N u so m o cs BCW71/72/81 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW71 K1 BCW72 K2 BCW81 K3 • SILICON EPITAXIAL PLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ LOW LEVEL AUDIO AMPLIFICATION AND

Mpsa42

Abstract: mpsa 102
Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: MPSA 92 MPSA 93 PNP Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configur ation

Q62702F1240

Abstract: f 840 h marking NC
Contextual Info: SIEMENS NPN Silicon RF Transistors BF 840 BF 841 • Suitable for com m on emitter R F, IF amplifiers • Low collector-base capacitance due to contact shield diffusion • Low output conductance Type Marking Ordering Code PinC 'onfigu •ation 1 2 3 Package1

transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
Contextual Info: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation

S763T

Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
Contextual Info: TELEFUNKEN ELECTRONIC Ô1C D • flc 200eib 000543Q L ■lALââ S 763 T Melectronic -r- jy- 2./ Creative Technologies Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range Features: >Low noise figures • High power gain Dimensions In mm

aot 1106

Abstract: transistor bc 209 npn transistor BC 209 transistor BUX bux 84 MARKING BUX AL6 marking BF 212 transistor telefunken ta 400
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'Jb O D O IS ia ■ ALGG BUX 84 • BUX 85 Silicon NPN Power Transistors r - 3 3 - ii ! Applications: Switching mode power supply Features: • Short switching times • Power dissipation 40 W • In multi diffusion technique

TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738

K68A

Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Contextual Info: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTD133HKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.

2N499A

Abstract: FBT Hr transistor marking WC 2C marking EHG 2N499 transistor KIN
Contextual Info: MIL-S-1950C/72C KL 2 AUGUST 1967 SurERSZDISQ HH-S-15^00/?2B(Sig C) 8 January 1962 MILITASI SPECIFICATICS. TRANSISTOR, PNP, QEKMAHUM T iro s ¿ui&9 axtd ZHU99A 1. SCOPE 1.1 Scepe»- Thio specification oarers the ¿stall requirtnients for geraanim, PSP, transistors for particular nse In bigh-frequencv. qn4paent-circtìLt explications.

Zener diode smd marking S4

Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
Contextual Info: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.

TRANSISTOR HK SMD

Abstract: smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits • Features 1.00±0.05  Optimum for high-density mounting and downsizing of the equipment

j3y transistor

Abstract: transistor j3y MARKING J3Y S8050LT1 SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y
Contextual Info: PLASTIC-ENCAPSULATE TRANSISTORS S8050LT1 S8050LT1 TRANSISTOR（ NPN ） SOT— —23 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V BR CBO : 40 W（Tamb=25℃） 1. BASE A 2. EMITTER 3. COLLECTOR V CHARACTERISTICS（

Contextual Info: TMP422-EP SBOS577 – SEPTEMBER 2011 www.ti.com ±1°C REMOTE TEMPERATURE AND ±2.5°C LOCAL TEMPERATURE SENSOR IN SOT23-8 Check for Samples: TMP422-EP FEATURES 1 • • • • • • • • • 234 SOT23-8 Package ±1°C Remote Diode Sensor Max ±2.5°C Local Temperature Sensor (Max)

UNR92A9J

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits Unit: mm • Features 0.80±0.05 1.60+0.05 −0.03 1.00±0.05  Optimum for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C

UNR32A9

Contextual Info: Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05

ic 556 datasheet

Abstract: sot-23 Marking M1F MMBT5550LT1 MMBT5551LT1 WMBT5551LT1 mmbt5550
Contextual Info: WMBT5551LT1 COLLECTOR 3 NPN Silicon Transistor 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 160 Vdc Collector – Emitter Voltage VCEO Collector – Base Voltage VCBO 180 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Collector Current — Continuous

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9J Silicon NPN epitaxial planar type For digital circuits • Features 1.00±0.05  Optimum for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9G Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR52A9G Silicon NPN epitaxial planar type For digital circuits • Features  Package  Costs can be reduced through downsizing of the equipment and reduction of

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR92A9G Silicon NPN epitaxial planar type For digital circuits • Features  Package  Optimum for high-density mounting and downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C